Abstract: A method of manufacturing a transistor capable of obtaining a BICMOS while making the difference in the number of manufacturing processes from a CMOS smaller, includes the steps of: separating an element region in a semiconductor substrate; forming a emitter opening for deciding upon an emitter layer in an insulating film on the semiconductor substrate, forming a polysilicon film on the insulating film and in the emitter opening; implanting selectively impurity ions into the semiconductor substrate through the polysilicon film and the insulating film to form a collector layer and a base layer; and performing heat treatment for activating impurities in the base layer and the collector layer and diffusing impurities into the semiconductor substrate from the polysilicon film to form an emitter diffused layer.

Abstract: There is provided a semiconductor device including a transistor, said transistor having (a) a semiconductor substrate, (b) source and drain regions formed in the semiconductor substrate, (c) a gate electrode formed on the semiconductor substrate between the source and drain regions, (d) a silicide layer formed partially on one of the source and drain regions, and (e) an electrode terminal making contact with the silicide layer. The silicide layer extends so that it covers at least an area through which the electrode terminal makes contact with the drain region. In the above mentioned semiconductor device, since the silicide layer is formed only in the vicinity of an area through which the electrode terminal makes contact with the silicide layer, it is possible to construct an output transistor in LDD structure. Thus, there can be obtained an output transistor having higher ESD immunity, higher driving ability, and higher integration.

Abstract: A method of manufacturing a transistor capable of obtaining a BICMOS while making the difference in the number of manufacturing processes from a CMOS smaller, includes the steps of: separating an element region in a semiconductor substrate; forming a emitter opening for deciding upon an emitter layer in an insulating film on the semiconductor substrate, forming a polysilicon film on the insulating film and in the emitter opening; implanting selectively impurity ions into the semiconductor substrate through the polysilicon film and the insulating film to form: a collector layer and a base layer; and performing heat treatment for activating impurities in the base layer and the collector layer and diffusing impurities into the semiconductor substrate from the polysilicon film to form an emitter diffused layer.