Abstract: Disclosed herein are apparatuses of several types for forming a film at an increased rate that is necessary for putting the microwave assisting sputtering into practice on an industrial scale. The feature resides in that a plasma is maintained uniformly on the whole surface of target composed of a material to be sputtered. This makes it possible to avoid the target from being thermally destroyed by the increased energy of sputtering. Further, in order to prevent damage on a substrate on which the film is to be sputtered by plasma for sputtering, consideration is given to the arrangement of magnetic devices in order to form the film by positively introducing the plasma onto the substrate on which the film is to be formed and, at the same time, effecting the sputtering.