Patents by Inventor Shuvadeep Kumar

Shuvadeep Kumar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods and apparatuses to reduce power dissipation in a static random access memory (SRAM) device
    Patent number: 10522218
    Abstract: Embodiments herein provide a method for reducing power dissipation in a Static Random Access Memory (SRAM) device. The method includes determining, by the tracking circuit, whether at least one SRAM Bit-Cell discharges power from at least one BL exceeding a pre-defined voltage level required for a sense amplifier to perform a read operation. Furthermore, the method includes reducing, by the WL driver, the power discharged from the at least one BL by controlling a WL voltage power supply switch of the WL driver using a SAE signal and adjusting a pulse width of the at least one WL to pull down the at least one WL using a NMOS circuit when the at least one SRAM Bit-Cell discharges the power from the at least one BL exceeding the pre-defined voltage level.
    Type: Grant
    Filed: November 14, 2018
    Date of Patent: December 31, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Parvinder Kumar Rana, Lava Kumar Pulluru, Shuvadeep Kumar, Ankur Gupta
  • METHODS AND APPARATUSES TO REDUCE POWER DISSIPATION IN A STATIC RANDOM ACCESS MEMORY (SRAM) DEVICE
    Publication number: 20190147943
    Abstract: Embodiments herein provide a method for reducing power dissipation in a Static Random Access Memory (SRAM) device. The method includes determining, by the tracking circuit, whether at least one SRAM Bit-Cell discharges power from at least one BL exceeding a pre-defined voltage level required for a sense amplifier to perform a read operation. Furthermore, the method includes reducing, by the WL driver, the power discharged from the at least one BL by controlling a WL voltage power supply switch of the WL driver using a SAE signal and adjusting a pulse width of the at least one WL to pull down the at least one WL using a NMOS circuit when the at least one SRAM Bit-Cell discharges the power from the at least one BL exceeding the pre-defined voltage level.
    Type: Application
    Filed: November 14, 2018
    Publication date: May 16, 2019
    Inventors: Parvinder Kumar RANA, Lava Kumar PULLURU, Shuvadeep Kumar, Ankur GUPTA