Abstract: Embodiments of the present disclosure provide a semiconductor device structure having vertically stacked complementary field effect transistors (CFETs). The CFETs are formed by bonding two substrates having semiconductor stacks formed thereon. A bonding structure is formed between the semiconductor stacks using wafer bonding technology. Embodiments of the resent disclosure enable the flexibility of choosing different N/P channel properties, provide a simple way to form the N/P channel isolation structure, and reduce potential leakage path and defects in stacked CFETs.

Abstract: Semiconductor structures and methods are provided. A semiconductor structure according to the present disclosure includes a substrate, a first semiconductor layer over the substrate, a second semiconductor layer over the first semiconductor layer and including a channel region sandwiched between a first source/drain region and a second source/drain region, a first plurality of nanostructures disposed over the channel region, a first leakage block layer over the first source/drain region, a second leakage block layer over the second source/drain region, a dielectric layer on the first leakage block layer, a first source/drain feature on the dielectric layer and in contact with first sidewalls of the first plurality of nanostructures, and a second source/drain feature disposed on the second leakage block layer and in contact with second sidewalls of the first plurality of nanostructures. The first leakage block layer and the second leakage block layer includes an undoped semiconductor material.

Abstract: Embodiments of the present disclosure provide a semiconductor device structure having vertically stacked complementary field effect transistors (CFETs). The CFETs are formed by bonding two substrates having semiconductor stacks formed thereon. A bonding structure is formed between the semiconductor stacks using wafer bonding technology. Embodiments of the resent disclosure enable the flexibility of choosing different N/P channel properties, provide a simple way to form the N/P channel isolation structure, and reduce potential leakage path and defects in stacked CFETs.

Abstract: Semiconductor structures and methods are provided. A semiconductor structure according to the present disclosure includes a substrate, a first semiconductor layer over the substrate, a second semiconductor layer over the first semiconductor layer and including a channel region sandwiched between a first source/drain region and a second source/drain region, a first plurality of nanostructures disposed over the channel region, a first leakage block layer over the first source/drain region, a second leakage block layer over the second source/drain region, a dielectric layer on the first leakage block layer, a first source/drain feature on the dielectric layer and in contact with first sidewalls of the first plurality of nanostructures, and a second source/drain feature disposed on the second leakage block layer and in contact with second sidewalls of the first plurality of nanostructures. The first leakage block layer and the second leakage block layer includes an undoped semiconductor material.

Abstract: A shared memory based network having a transferring network switch and a receiving network switch. In this network, each network switch has a stack, queues corresponding to output ports and a dared control port. The stack stores available buffer addresses of the shared memory. Each of the queues stores to-be-accessed buffer addresses of the corresponding output port. The shared control port is driven to indicate states of the shared memory based network, so that th stack of the transferring network switch is identical with the stack of the receiving network switch. The shared memory can be read by all output ports of both the transferring network switch and the receiving network switch according to their corresponding queues.

Abstract: A display memory architecture which efficiently stores and processes true color and index mode pixels is disclosed. The R, G and B components of true color mode pixels occupy different groups of bit planes in different banks of a frame memory. In addition, consecutive index mode pixels are located in not necessarily consecutive different groups of bit planes in consecutive banks so that a plurality of index mode pixels can be accessed simultaneously in reading and writing operations. Pixel swap circuits are used to swap the order of the R, G and B components of true color pixels and the order of simultaneously accessed index mode pixels, when the order of the accessed locations is different from the order in which R, G and B components of true color pixels or a plurality of index mode pixels are processed by a graphics processor.

Abstract: A host computer, a graphics processor which receives and executes commands generated by the host computer, a display memory for storing display data, and a display device for displaying the display data are provided. A graphics context is also provided in which the parameters of a current image are stored. A processing unit for receiving and executing the graphics commands issued by the host computer and for converting the parameters stored in the graphics context into the display data, and a drawing unit for storing the display data in the display memory are also provided. Furthermore, a shared memory is provided which is directly accessible to the host computer so that it can write the parameters of a next graphics command into the shared memory while the graphics processor is executing a current command. The shared memory is also directly accessible to the graphics processor so that it can receive the parameters of the next graphics command to be executed directly from the shared memory.