Patents by Inventor Shu-Wen Chen
Shu-Wen Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11968869Abstract: An electronic device includes a flexible substrate and a conductive wire. The conductive wire is disposed on the flexible substrate and includes a metal portion and a plurality of openings disposed in the metal portion. The metal portion includes a plurality of extending portions and a plurality of joint portions, and each of the openings is surrounded by two of the plurality of extending portions and two of the plurality of joint portions. A ratio of a sum of widths of the plurality of extending portions to a sum of widths of the plurality of joint portions is in a range from 0.8 to 1.2.Type: GrantFiled: April 28, 2022Date of Patent: April 23, 2024Assignee: InnoLux CorporationInventors: Ya-Wen Lin, Chien-Chih Chen, Yen-Hsi Tu, Cheng-Wei Chang, Shu-Hui Yang
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Patent number: 11955397Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.Type: GrantFiled: November 9, 2020Date of Patent: April 9, 2024Assignee: Vanguard International Semiconductor CorporationInventors: Shin-Cheng Lin, Cheng-Wei Chou, Ting-En Hsieh, Yi-Han Huang, Kwang-Ming Lin, Yung-Fong Lin, Cheng-Tao Chou, Chi-Fu Lee, Chia-Lin Chen, Shu-Wen Chang
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Publication number: 20240088223Abstract: In a method of manufacturing a semiconductor device, a field effect transistor (FET) having a metal gate structure, a source and a drain over a substrate is formed. A first frontside contact disposed between dummy metal gate structures is formed over an isolation insulating layer. A frontside wiring layer is formed over the first frontside contact. A part of the substrate is removed from a backside of the substrate so that a bottom of the isolation insulating layer is exposed. A first opening is formed in the isolation insulating layer from the bottom of the isolation insulating layer to expose a bottom of the first frontside contact. A first backside contact is formed by filling the first opening with a conductive material to connect the first frontside contact.Type: ApplicationFiled: March 24, 2023Publication date: March 14, 2024Inventors: Shu-Wen SHEN, Yen-Po Lin, Chun-Han Chen
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Patent number: 11916091Abstract: A backside illumination (BSI) image sensor and a method of forming the same are provided. A device includes a substrate and a plurality of photosensitive regions in the substrate. The substrate has a first side and a second side opposite to the first side. The device further includes an interconnect structure on the first side of the substrate, and a plurality of recesses on the second side of the substrate. The plurality of recesses extend into a semiconductor material of the substrate.Type: GrantFiled: April 15, 2021Date of Patent: February 27, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hung-Wen Hsu, Jiech-Fun Lu, Yeur-Luen Tu, U-Ting Chen, Shu-Ting Tsai, Hsiu-Yu Cheng
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Publication number: 20230378283Abstract: A method of fabricating a semiconductor device is disclosed. The method includes separating an interlayer dielectric (ILD) into a plurality of portions. The plurality of portions of ILD, separated from each other along a first lateral direction and a second lateral direction, overlay a plurality of groups of epitaxial regions, respectively. The method includes performing an etching process to expose the plurality of groups of epitaxial regions, wherein the etching process comprises a plurality of stages, each of the stages comprising a respective etchant. The method includes forming a plurality of conductive contacts electrically coupled to the plurality of epitaxial regions, respectively.Type: ApplicationFiled: July 31, 2023Publication date: November 23, 2023Applicant: Taiwan Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shu-Wen Chen, Guan-Ren Wang, Ching-Feng Fu
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Patent number: 11757010Abstract: A method of fabricating a semiconductor device is disclosed. The method includes separating an interlayer dielectric (ILD) into a plurality of portions. The plurality of portions of ILD, separated from each other along a first lateral direction and a second lateral direction, overlay a plurality of groups of epitaxial regions, respectively. The method includes performing an etching process to expose the plurality of groups of epitaxial regions, wherein the etching process comprises a plurality of stages, each of the stages comprising a respective etchant. The method includes forming a plurality of conductive contacts electrically coupled to the plurality of epitaxial regions, respectively.Type: GrantFiled: February 3, 2021Date of Patent: September 12, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Shu-Wen Chen, Guan-Ren Wang, Ching-Feng Fu
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Publication number: 20210336013Abstract: A method of fabricating a semiconductor device is disclosed. The method includes separating an interlayer dielectric (ILD) into a plurality of portions. The plurality of portions of ILD, separated from each other along a first lateral direction and a second lateral direction, overlay a plurality of groups of epitaxial regions, respectively. The method includes performing an etching process to expose the plurality of groups of epitaxial regions, wherein the etching process comprises a plurality of stages, each of the stages comprising a respective etchant. The method includes forming a plurality of conductive contacts electrically coupled to the plurality of epitaxial regions, respectively.Type: ApplicationFiled: February 3, 2021Publication date: October 28, 2021Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: Shu-Wen Chen, Guan-Ren Wang, Ching-Feng Fu
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Patent number: 9717753Abstract: The present invention provides a lubricating composition comprising an alginic acid or a salt or ester thereof, which is effective in reducing frictions in artificial joints and wear of artificial joint implants. Also provided is a method for lubricating artificial joints comprising administering said composition to a synovial cavity of a subject. In another aspect, the present invention provides use of an alginic acid or a salt or ester thereof in manufacturing a lubricating composition.Type: GrantFiled: November 14, 2014Date of Patent: August 1, 2017Assignee: National Taipei University of TechnologyInventors: Hsu-Wei Fang, Shu-Wen Chen, Yi-Ling Huang
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Publication number: 20150328252Abstract: The present invention provides a lubricating composition comprising an alginic acid or a salt or ester thereof, which is effective in reducing frictions in artificial joints and wear of artificial joint implants. Also provided is a method for lubricating artificial joints comprising administering said composition to a synovial cavity of a subject. In another aspect, the present invention provides use of an alginic acid or a salt or ester thereof in manufacturing a lubricating composition.Type: ApplicationFiled: November 14, 2014Publication date: November 19, 2015Inventors: Hsu-Wei FANG, Shu-Wen CHEN, Yi-Ling HUANG
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Patent number: 6371102Abstract: A device for cutting a row of interconnected rectangular plate-shaped workpieces into a plurality of individual rectangular units, includes a machine bed, and a sliding member disposed slidably on the machine bed and movable along a straight path. A rectangular work seat is disposed rotatably on the sliding member, and is rotatable about a vertical axis on the sliding member. The work seat has four sides, a length and a width. A mounting frame is disposed around the work seat, and defines a rectangular hole therein, which has four sides that are respectively parallel to the four sides of the work seat, and a length and a width that are respectively and slightly larger than those of the work seat. An adhesive sheet has an adhesive top surface with an outer peripheral portion that is adhered to a bottom surface of the mounting frame. The interconnected workpieces are adhered to the top surface of the adhesive sheet so as to be cut while disposed inside the mounting frame.Type: GrantFiled: August 30, 2000Date of Patent: April 16, 2002Assignee: Uni-Tek System, Inc.Inventors: Kuo-Hwa Wu, Chi-Chien Chien, Shu-Wen Chen, Wei-Chun Seng, Chun-Chen Chen
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Patent number: D440145Type: GrantFiled: August 2, 2000Date of Patent: April 10, 2001Assignee: Uni-Tek System, Inc.Inventors: Kuo-Hwa Wu, Chi-Chien Chien, Shu-Wen Chen, Weichun Seng, Chun-Chen Chen