Abstract: A process for fabricating a pendulous accelerometer, including the steps of: providing a first substrate having a top planar surface, etching a portion of the first substrate to a first predetermined depth from the top planar surface to form a plurality of first protrusions, providing a second substrate, etching a portion of the second substrate to a second predetermined depth to form a plurality of second protrusions, bonding planar surfaces of the first protrusions to planar surfaces of the second protrusions, and etching a portion of the first substrate from an opposite side of the first substrate to a third predetermined depth equal to or greater than the difference between the total thickness of the first substrate and the first predetermined depth to form a freely rotatable sensing plate that includes a substantially hollow proof mass.

Abstract: A full-automatic water-bath rotary recuperated autoclave with high temperature & high pressure comprising a hot water tank, a process tank and its transmission system, characterized in that: Through bolt connection, said hot water tank is fixed on said process tank at the end of which a straight round end cover is provided; a holder for transmission system is mounted on the side of said straight round end cover; there is a bearing seat on the said holder; the main shaft is connected with the said bearing seat via the said bearing; the gears are fixed on the said main shaft and connected with the motor output wheels; the said motor is mounted on the said holder. Through above configuration, the present invention uses simple structural connection to solve effectively conveniently disadvantages of transmission system and improve operating life of the whole autoclave at the same time.

Abstract: A transducer for use in a harsh environment including a substrate and a transducer die directly coupled to the substrate by a bond frame positioned between the substrate and the transducer die. The transducer die includes a transducer element which provides an output signal related to a physical characteristic to be measured, or which receives an input signal and responsively provides a physical output. The transducer further includes a connecting component electrically coupled to the transducer element at a connection location that is fluidly isolated from the transducer element or the surrounding environment by the bond frame. The bond frame is made of materials and the connecting component is electrically coupled to the transducer element by the same materials of the bond frame, and the connecting component is electrically isolated from the bond frame.

Abstract: A structure including a first structural component, a second structural component and a bonding structure bonding the first and second structural components together, where the bonding structure contains a hypoeutectic solid solution alloy. The hypoeutectic solid solution alloy may be a gold-germanium solid solution alloy, a gold-silicon solid solution alloy or a gold-tin solid solution alloy.

Abstract: Disclosed is a capacitive pressure probe for high temperature applications, such as for use in a gas turbine engine. The capacitive probe or pressure sensor of the present invention includes, inter alia, a sensor housing that defines an interior sensing chamber having a pressure port and an interior reference chamber positioned adjacent to a sensing electrode. The reference chamber is separated from the sensing chamber by a deflectable diaphragm made from Haynes 230 alloy, wherein the deflection of the diaphragm in response to an applied pressure in the sensing chamber corresponds to a change in capacitance value detected by the sensing electrode.

Abstract: A method for forming a transducer including the step of providing a semiconductor-on-insulator wafer including first and second semiconductor layers separated by an electrically insulating layer. The method further includes depositing or growing a piezoelectric film or piezoresistive film on the wafer, depositing or growing an electrically conductive material on the piezoelectric or piezoresistive film to form at least one electrode, and depositing or growing a bonding layer including an electrical connection portion that is located on or is electrically coupled to the electrode. The method further includes the step of providing a ceramic substrate having a bonding layer located thereon, the bonding layer including an electrical connection portion and being patterned in a manner to generally match the bonding layer of the semiconductor-on-insulator wafer.

Abstract: A method for bonding two components together including the steps of providing a first component, providing a second component, and locating a first eutectic bonding material between the first and second component. The first eutectic bonding material includes at least one of germanium, tin, or silicon. The method further includes the step of locating a second eutectic bonding material between the first and second component and adjacent to the first eutectic bonding material. The second eutectic bonding material includes gold. The method further includes the step of heating the first and second eutectic bonding materials to a temperature above a eutectic temperature of an alloy of the first and second eutectic bonding materials to allow a hypoeutectic alloy to form out of the first and second eutectic bonding materials. The method includes the further step of cooling the hypoeutectic alloy to form a solid solution alloy bonding the first and second components together.

Abstract: A method for forming a transducer including the step of providing a semiconductor-on-insulator wafer including first and second semiconductor layers separated by an electrically insulating layer. The method further includes depositing or growing a piezoelectric film or piezoresistive film on the wafer, depositing or growing an electrically conductive material on the piezoelectric or piezoresistive film to form at least one electrode, and depositing or growing a bonding layer including an electrical connection portion that is located on or is electrically coupled to the electrode. The method further includes the step of providing a ceramic substrate having a bonding layer located thereon, the bonding layer including an electrical connection portion and being patterned in a manner to generally match the bonding layer of the semiconductor-on-insulator wafer.

Abstract: A pressure sensor for use in a harsh environment including a substrate and a sensor die directly coupled to the substrate by a bond frame positioned between the substrate and the sensor die. The sensor die includes a generally flexible diaphragm configured to flex when exposed to a sufficient differential pressure thereacross. The sensor further includes a piezoelectric or piezoresistive sensing element at least partially located on the diaphragm such that the sensing element provides an electrical signal upon flexure of the diaphragm. The sensor also includes an connecting component electrically coupled to the sensing element at a connection location that is fluidly isolated from the diaphragm by the bond frame. The bond frame is made of materials and the connecting component is electrically coupled to the sensing element by the same materials of the bond frame.

Abstract: A pendulous capacitive accelerometer including a substrate having a substantially planar upper surface with an electrode section, and a sensing plate having a central anchor portion supported on the upper surface of the substrate to define a hinge axis. The sensing plate includes a solid proof mass on a first side of the central anchor portion and a substantially hollow proof mass on a second side of the central anchor portion, providing for reduced overall chip size and balanced gas damping. The solid proof mass has a first lower surface with a first electrode element thereon, and the substantially hollow proof mass has a second lower surface with a second electrode element thereon. Both the solid proof mass and the hollow proof mass have the same capacitive sensing area. The sensing plate rotates about the hinge axis relative to the upper surface of the substrate in response to an acceleration.

Abstract: A pressure sensor for use in a harsh environment including a substrate and a sensor die directly coupled to the substrate by a bond frame positioned between the substrate and the sensor die. The sensor die includes a generally flexible diaphragm configured to flex when exposed to a sufficient differential pressure thereacross. The sensor further includes a piezoelectric or piezoresistive sensing element at least partially located on the diaphragm such that the sensing element provides an electrical signal upon flexure of the diaphragm. The sensor also includes an connecting component electrically coupled to the sensing element at a connection location that is fluidly isolated from the diaphragm by the bond frame. The bond frame is made of materials and the connecting component is electrically coupled to the sensing element by the same materials of the bond frame.

Abstract: A method for making a pressure sensor including the steps of providing a substrate and forming or locating a pressure sensing component on the substrate. The method further includes the step of, after the forming or locating step, etching a cavity in the substrate below the pressure sensing component to define a diaphragm above the cavity with the pressure sensing component located on the diaphragm. The pressure sensing component includes an electrically conductive electron gas which changes its electrical resistance thereacross upon movement of the diaphragm.

Abstract: A micro mirror array including an upper wafer portion having a plurality of movable reflective surfaces located thereon, the upper wafer portion defining a coverage area in top view. The array further includes a lower wafer portion located generally below and coupled to the upper wafer portion. The lower wafer portion includes at least one connection site located thereon, the at least one connection site being electrically or operatively coupled to at least one component which can control the movement of at least one of the reflective surfaces. The at least one connection site is not generally located within the coverage area of the upper wafer portion.

Abstract: A harsh environment transducer including a substrate having a first surface and a second surface, wherein the second surface is in communication with the environment. The transducer includes a device layer sensor means located on the substrate for measuring a parameter associated with the environment. The sensor means including a single crystal semiconductor material having a thickness of less than about 0.5 microns. The transducer further includes an output contact located on the substrate and in electrical communication with the sensor means. The transducer includes a package having an internal package space and a port for communication with the environment. The package receives the substrate in the internal package space such that the first surface of the substrate is substantially isolated from the environment and the second surface of the substrate is substantially exposed to the environment through the port.

Abstract: A detector including a base having a recess formed therein and a diaphragm generally extending across the recess. The detector further includes an infrared sensitive component or a piezoelectric or piezoresistive element located on, above or supported by the diaphragm. The diaphragm includes a material which is generally resistant to liquid chemical etchants and which has a thermal conductivity of less than about 0.005 Wcm?1K?1.

Abstract: A pressure sensor including a movable component that is configured to move when the pressure sensor is exposed to differential pressure thereacross, and a pressure sensing component located on the movable component. The pressure sensing component includes an electrically conductive electron gas which changes its electrical resistance thereacross upon movement of the movable component. The pressure sensor is configured such that leads can be coupled to the pressure sensing component and the pressure sensing component can output a signal via the leads, the signal being related to a pressure to which the pressure sensor is exposed.

Abstract: A pressure sensor including a movable component that is configured to move when the pressure sensor is exposed to differential pressure thereacross, and a pressure sensing component located on the movable component. The pressure sensing component includes an electrically conductive electron gas which changes its electrical resistance thereacross upon movement of the movable component. The pressure sensor is configured such that leads can be coupled to the pressure sensing component and the pressure sensing component can output a signal via the leads, the signal being related to a pressure to which the pressure sensor is exposed.

Abstract: A micro mirror array including an upper wafer portion having a plurality of movable reflective surfaces located thereon, the upper wafer portion defining a coverage area in top view. The array further includes a lower wafer portion located generally below and coupled to the upper wafer portion. The lower wafer portion includes at least one connection site located thereon, the at least one connection site being electrically or operatively coupled to at least one component which can control the movement of at least one of the reflective surfaces. The at least one connection site is not generally located within the coverage area of the upper wafer portion.

Abstract: A micro mirror structure including a plurality of individually movable mirrors. Each mirror has a generally concave shape from a top perspective at a temperature of about 20 degrees Celsius and has a generally convex shape from a top perspective at a temperature of about 85 degrees Celsius. In one embodiment, the radius of curvature may be greater than about 500 mm at a temperature of about 20 degrees Celsius and may be less than about −600 mm at a temperature of about 85 degrees Celsius at a thickness of about 10 microns. In another embodiment, the invention is a micro mirror structure including a plurality of individually movable mirrors arranged in an array. Each mirror includes a substrate, a diffusion barrier layer located above the substrate, and a reflective layer located above the diffusion barrier layer. The diffusion barrier layer generally limits the diffusion of the top reflective layer through the diffusion barrier layer.

Abstract: A method of preparing a semiconductor structure comprises: (a) providing a first material comprising (i) a first wafer comprising silicon, (ii) at least one SiC conversion layer obtained by converting a portion of the silicon to SiC, (iii) at least one layer of non-indigenous SiC applied to the conversion layer, and (iv) at least one oxide layer applied to the non-indigenous SiC layer; (b) implanting ions in a region of the non-indigenous SiC layer, thereby establishing an implant region therein which defines a first portion of the non-indigenous SiC layer and a second portion of the non-indigenous SiC layer; (c) providing at least one additional material comprising (i) a second wafer comprising silicon, and (ii) an oxide layer applied to a face of the second wafer; (d) bonding the oxide layer of the first material and oxide layer of the material to provide an assembly of the first material and second material; and (e) separating at the implant region the second portion of the non-indigenous SiC layer fr