Patents by Inventor Shuxia Wang

Shuxia Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200147243
    Abstract: Provided is a ligand compound of ?7 nicotinic acetylcholine receptor, which can be represented by any one of the following general formulas, wherein (1) represents a halogen. The ligand compound is an improved ligand compound of ?7 nicotinic acetylcholine receptor. The ligand compound can be used as a PET imaging agent after being radio-chemically marked.
    Type: Application
    Filed: June 6, 2017
    Publication date: May 14, 2020
    Applicant: BEIJING NORMAL UNIVERSITY
    Inventors: Huabei ZHANG, Huan WANG, Yu FANG, Jianping LIU, Shuxia WANG
  • Patent number: 10439133
    Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a hybrid free layer. The hybrid free layer is switchable between stable magnetic states using a current passed through the magnetic junction. The nonmagnetic spacer layer is between the free layer and the reference layer. The hybrid free layer includes a soft magnetic layer, a hard magnetic layer and an oxide coupling layer between the hard magnetic layer and the soft magnetic layer. The soft magnetic layer has a soft layer magnetic thermal stability coefficient of not more than thirty. The hard magnetic layer has a hard layer magnetic thermal stability coefficient of at least twice the soft layer magnetic thermal stability coefficient.
    Type: Grant
    Filed: May 23, 2017
    Date of Patent: October 8, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dmytro Apalkov, Xueti Tang, Vladimir Nikitin, Shuxia Wang, Gen Feng
  • Patent number: 10177197
    Abstract: A magnetic junction usable in a magnetic device is described. The magnetic junction has a free layer, a reference layer, and a nonmagnetic spacer layer between reference and free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a length in a first direction, a width in a second direction perpendicular to the first direction, an exchange stiffness and an aspect ratio equal to the length divided by the width. The aspect ratio is greater than one. The exchange stiffness is not less than 2×10?6 erg/cm.
    Type: Grant
    Filed: February 12, 2016
    Date of Patent: January 8, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dmytro Apalkov, Shuxia Wang, Jang-Eun Lee
  • Publication number: 20180269384
    Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a free layer, first and second reference layers, and first and second nonmagnetic spacer layers. The free layer is switchable between stable magnetic states. The first and second nonmagnetic spacer layers are between the free layer and first and second reference layers. The first and second reference layers have first and second reference layer magnetic lengths. The free layer has a free layer magnetic length less than the free layer physical length and less than the first and second reference layer magnetic lengths. The free layer magnetic length has a first end and a second end opposite to the first end. The free layer and the reference layers are oriented such that the first and second reference layer magnetic lengths extend past the first and second ends of the free layer.
    Type: Application
    Filed: May 10, 2018
    Publication date: September 20, 2018
    Inventors: Shuxia Wang, Dmytro Apalkov, Vladimir Nikitin
  • Publication number: 20180261762
    Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a hybrid free layer. The hybrid free layer is switchable between stable magnetic states using a current passed through the magnetic junction. The nonmagnetic spacer layer is between the free layer and the reference layer. The hybrid free layer includes a soft magnetic layer, a hard magnetic layer and an oxide coupling layer between the hard magnetic layer and the soft magnetic layer. The soft magnetic layer has a soft layer magnetic thermal stability coefficient of not more than thirty. The hard magnetic layer has a hard layer magnetic thermal stability coefficient of at least twice the soft layer magnetic thermal stability coefficient.
    Type: Application
    Filed: May 23, 2017
    Publication date: September 13, 2018
    Inventors: Dmytro Apalkov, Xueti Tang, Vladimir Nikitin, Shuxia Wang, Gen Feng
  • Publication number: 20180190898
    Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a free layer, first and second reference layers, and first and second nonmagnetic spacer layers. The free layer is switchable between stable magnetic states using a current passed through the magnetic junction. The first and second nonmagnetic spacer layers are between the free layer and first and second reference layers. The first and second reference layers have first and second reference layer magnetic lengths. The free layer has a free layer magnetic length less than the first and second reference layer magnetic lengths. The free layer magnetic length has a first end and a second end opposite to the first end. The free layer and the reference layers are oriented such that the first and second reference layer magnetic lengths extend past the first and second ends of the free layer.
    Type: Application
    Filed: December 30, 2016
    Publication date: July 5, 2018
    Inventors: Shuxia Wang, Dmytro Apalkov, Vladimir Nikitin
  • Publication number: 20170140804
    Abstract: A magnetic junction usable in a magnetic device is described. The magnetic junction has a free layer, a reference layer, and a nonmagnetic spacer layer between reference and free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a length in a first direction, a width in a second direction perpendicular to the first direction, an exchange stiffness and an aspect ratio equal to the length divided by the width. The aspect ratio is greater than one. The exchange stiffness is not less than 2×10?6 erg/cm.
    Type: Application
    Filed: February 12, 2016
    Publication date: May 18, 2017
    Inventors: Dmytro Apalkov, Shuxia Wang, Jang-Eun Lee
  • Publication number: 20160163338
    Abstract: An apparatus according to one embodiment includes a read sensor. The read sensor has an antiferromagnetic layer (AFM), a first antiparallel magnetic layer (AP1 ) positioned above the AFM layer in a first direction oriented along a media-facing surface and perpendicular to a track width direction, a non-magnetic layer positioned above the AP1 in the first direction, a second antiparallel magnetic layer (AP2) positioned above the non-magnetic layer in the first direction, a harrier layer positioned above the AP2 in the first direction, and a free layer positioned above the barrier layer in the first direction. A soft bias layer is positioned behind at least a portion of the free layer in an element height direction normal to the media-facing surface, the soft bias layer including a soft magnetic material configured to compensate for a magnetic coupling of the free layer with the AP2.
    Type: Application
    Filed: December 3, 2014
    Publication date: June 9, 2016
    Applicant: HGST Netherlands B.V.
    Inventors: Kuok S. Ho, Nian Ji, Quang Le, Ying Li, Simon H. Liao, Guangli Liu, Xiaoyong Liu, Suping Song, Shuxia Wang, Hualiang Yu
  • Publication number: 20160055868
    Abstract: According to one embodiment, a system includes a leading magnetic shield, a first sensor structure above the leading magnetic shield, a first middle magnetic shield above the first sensor structure, a nonmagnetic spacer above the first middle magnetic shield, a second middle magnetic shield above the nonmagnetic spacer, a second sensor structure above the second middle magnetic shield, and a trailing magnetic shield above the second sensor structure. Other systems, methods, and computer program products are described in additional embodiments.
    Type: Application
    Filed: August 21, 2014
    Publication date: February 25, 2016
    Applicant: HGST NETHERLANDS B.V.
    Inventors: Zheng Gao, Lijie Guan, Kuok S. Ho, Suping Song, Shuxia Wang
  • Patent number: 9177588
    Abstract: The embodiments of the present invention relate to a method for forming a magnetic read head with pinned layers extending to the ABS of the read head and magnetically coupled with an antiferromagnetic layer that is recessed in relation to the ABS of the read head. Portions of the antiferromagnetic layer and a magnetic layer that are extending to the ABS are removed, exposing a shield. A shielding material is formed on the exposed shield and a seed layer is formed on the shield and on or over a portion of the remaining antiferromagnetic layer. A pinned layer structure is formed on the seed layer and the magnetic layer.
    Type: Grant
    Filed: January 17, 2014
    Date of Patent: November 3, 2015
    Assignee: HGST NETHERLANDS B.V.
    Inventors: James Mac Freitag, Ying Hong, Cherngye Hwang, Stefan Maat, Masaya Nishioka, David John Seagle, Hicham Moulay Sougrati, Shuxia Wang, Yi Zheng, Honglin Zhu
  • Publication number: 20150221328
    Abstract: A magnetic sensor having a structure that optimizes magnetic pinning strength and magnetic free layer stability. The sensor includes a sensor stack having a magnetic free layer that extends to a first stripe height and a pinned layer that extends beyond the first stripe height to a second stripe height. Magnetic bias structures are formed at the sides of the free layer and are each formed upon a non-magnetic fill layer that raises the bias layer to the level of the free layer, the non-magnetic fill layer being at the level of the pinned layer in the sensor stack. The fill layer allows the free layer stripe height to be defined in a partial mill process while allowing the pinned layer to extend beyond the free layer stripe height and also advantageously allows the bias layers to have a stripe height that is aligned with the free layer stripe height.
    Type: Application
    Filed: January 31, 2014
    Publication date: August 6, 2015
    Applicant: HGST NETHERLANDS B.V.
    Inventors: Quang Le, Simon H. Liao, Guangli Liu, Stefan Maat, Shuxia Wang
  • Publication number: 20150206550
    Abstract: The embodiments of the present invention relate to a method for forming a magnetic read head with pinned layers extending to the ABS of the read head and magnetically coupled with an antiferromagnetic layer that is recessed in relation to the ABS of the read head. Portions of the antiferromagnetic layer and a magnetic layer that are extending to the ABS are removed, exposing a shield. A shielding material is formed on the exposed shield and a seed layer is formed on the shield and on or over a portion of the remaining antiferromagnetic layer. A pinned layer structure is formed on the seed layer and the magnetic layer.
    Type: Application
    Filed: January 17, 2014
    Publication date: July 23, 2015
    Applicant: HGST Netherlands B.V.
    Inventors: James Mac FREITAG, Ying HONG, Cherngye HWANG, Stefan MAAT, Masaya NISHIOKA, David John SEAGLE, Hicham Moulay SOUGRATI, Shuxia WANG, Yi ZHENG, Honglin ZHU
  • Patent number: 8907666
    Abstract: A scissor style magnetic sensor having a novel hard bias structure for improved magnetic biasing robustness. The sensor includes a sensor stack that includes first and second magnetic layers separated by a non-magnetic layer such as an electrically insulating barrier layer or an electrically conductive spacer layer. The first and second magnetic layers have magnetizations that are antiparallel coupled, but that are canted in a direction that is neither parallel with nor perpendicular to the air bearing surface by a magnetic bias structure. The magnetic bias structure includes a neck portion extending from the back edge of the sensor stack and having first and second sides that are aligned with first and second sides of the sensor stack. The bias structure also includes a tapered or wedged portion extending backward from the neck portion.
    Type: Grant
    Filed: September 30, 2011
    Date of Patent: December 9, 2014
    Assignee: HGST Netherlands B.V.
    Inventors: Quang Le, Simon H. Liao, Shuxia Wang, Guangli Liu, Yongchul Ahn
  • Publication number: 20130082696
    Abstract: A scissor style magnetic sensor having a novel hard bias structure for improved magnetic biasing robustness. The sensor includes a sensor stack that includes first and second magnetic layers separated by a non-magnetic layer such as an electrically insulating barrier layer or an electrically conductive spacer layer. The first and second magnetic layers have magnetizations that are antiparallel coupled, but that are canted in a direction that is neither parallel with nor perpendicular to the air bearing surface by a magnetic bias stricture. The magnetic bias structure includes a neck portion extending from the back edge of the sensor stack and having first and second sides that are aligned with first and second sides of the sensor stack. The bias structure also includes a tapered or wedged portion extending backward from the neck portion.
    Type: Application
    Filed: September 30, 2011
    Publication date: April 4, 2013
    Applicant: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Quang Le, Simon H. Liao, Shuxia Wang, Guangli Liu, Yongchul Ahn
  • Publication number: 20130083432
    Abstract: A magnetic read head having a hard bias structure that both optimizes magnetic bias field and also ensures manufacturability while maintaining sensor stripe height integrity. The read head includes a sensor stack having a back edge and first and second laterally opposed sides. A hard bias structure extending from each of the first and second sides of the sensor stack has a neck portion located near the sensor and having a back edge that is aligned with and parallel to the back edge of the sensor stack. The hard bias structure also includes a flared portion having a back edge that defines an angle relative to the air bearing surface of the read head. The back edge preferably defines and angle of 45-75 degrees relative to the air bearing surface.
    Type: Application
    Filed: September 29, 2011
    Publication date: April 4, 2013
    Applicant: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Quang Le, Simon H. Liao, Shuxia Wang, Guangli Liu, Yongchul Ahn