Abstract: The present disclosure provides a semiconductor device, a manufacturing method, and electronic equipment. The semiconductor device including: a substrate; an interface, for generating two-dimensional charge carrier gas; a first electrode and a second electrode; and a first semiconductor layer of a first type doping formed on the substrate, wherein first regions and a second region are formed in the first semiconductor layer, wherein in the first regions, the dopant atoms of the first type do not have electrical activity, and in the second region, the dopant atoms of the first type have electrical activity; and the second region includes a portion coplanar with the first regions.

Abstract: The present disclosure provides a driving circuit, a driving IC, and a driving system, relating to the technical field of electronic circuits. The driving circuit comprises a control module and a driving signal output module, the control module is electrically connected to the driving signal output module, and the driving signal output module is configured to be electrically connected to a to-be-driven device, wherein the driving signal output module comprises at least two transistors, and the at least two transistors are epitaxially grown on the same substrate; and the control module is configured to control a closed state of the at least two transistors, so as to control an operation state of the to-be-driven device.

Abstract: The present invention relates to a semiconductor device, including: a first channel layer, which includes a first channel region, a first gate doped region, and a second channel region, where the second channel region is located above the first channel region, and the first gate doped region is located between the first channel region and the second channel region; a first barrier layer, where a first heterojunction having a vertical interface is formed between the first channel layer and the first barrier layer, and a vertical 2DEG or 2DHG is formed in the first heterojunction; a first electrode, which is located below the first gate doped region and in electric contact with the 2DEG or 2DHG in the first heterojunction; a second electrode, which is located above the first gate doped region and in electric contact with the 2DEG or 2DHG in the first heterojunction; and a third electrode, which is in electric contact, in the first gate doped region, with the 2DEG or 2DHG in the first heterojunction.

Abstract: The present disclosure provides a semiconductor device, a manufacturing method, and electronic equipment. The semiconductor device comprising: a substrate; an interface, for generating two-dimensional charge carrier gas; a first electrode and a second electrode; and a first semiconductor layer of a first type doping formed on the substrate, wherein first regions and a second region are formed in the first semiconductor layer, wherein in the first regions, the dopant atoms of the first type do not have electrical activity, and in the second region, the dopant atoms of the first type have electrical activity; and the second region comprises a portion coplanar with the first regions. The semiconductor device can not only avoid damage to the crystal structure, but also can be easily realized in the processing, and it can maintain good transport properties of the two-dimensional charge carrier gas, which is beneficial to the improvement of device performance.

Abstract: The present disclosure provides a driving circuit, a driving IC, and a driving system, relating to the technical field of electronic circuits. The driving circuit comprises a control module and a driving signal output module, the control module is electrically connected to the driving signal output module, and the driving signal output module is configured to be electrically connected to a to-be-driven device, wherein the driving signal output module comprises at least two transistors, and the at least two transistors are epitaxially grown on the same substrate; and the control module is configured to control a closed state of the at least two transistors, so as to control an operation state of the to-be-driven device.

Abstract: Disclosed are a method and a device for downloading a file. The method includes: when receiving a download request of a file, acquiring attribute information about the file, and learning information about the length of the file according to the attribute information about the file; when the length of the file goes beyond a preset value, segmenting the download request into at least two fragments of download requests; sending the at least two fragments of download requests to at least two data nodes to request to download corresponding fragments, and obtaining the at least two fragments; and according to the at least two fragments obtained by download, obtaining the file. By segmenting the download request into a plurality of fragments of requests, the present invention achieves the parallel download of the plurality of fragments of requests, thereby greatly improving the download efficiency of a file.

Abstract: The provided is a distributed file system, file access method and a client device. The file access method includes: accessing a file catalog stored by a master server, and obtaining routing information of a meta server associated with a to-be-accessed file from the master server; accessing the meta server according to the obtained routing information, and obtaining meta information of the to-be-accessed file from the meta server; and accessing the to-be-accessed file from multiple node servers according to the obtained meta information.

Abstract: Disclosed are a method and a device for downloading a file. The method includes: when receiving a download request of a file, acquiring attribute information about the file, and learning information about the length of the file according to the attribute information about the file; when the length of the file goes beyond a preset value, segmenting the download request into at least two fragments of download requests; sending the at least two fragments of download requests to at least two data nodes to request to download corresponding fragments, and obtaining the at least two fragments; and according to the at least two fragments obtained by download, obtaining the file. By segmenting the download request into a plurality of fragments of requests, the present invention achieves the parallel download of the plurality of fragments of requests, thereby greatly improving the download efficiency of a file.

Abstract: This invention provides a load-balancing structure for packet switches and its constructing method. In this method, the structure based on self-routing concentrators is divided into two stages, that is, a first stage and a second stage fabric. A virtual output group queue (VOGQ) is appended to each input group port of the first stage fabric, and a reordering buffer (RB) is configured behind each output group port of the second stage fabric. Packets stored in the VOGQ are combined into data blocks with preset length, which is divided into data slices of fixed size, finally each data slice is added an address tag and is delivered to the first stage fabric for self-routing. Once reaching the RB, data slices are recombined into data blocks. This invention solves the packet out-of-sequence problem in the load-balancing Birkhoff-von Neumann switching structure and improves the end-to-end throughput.

Abstract: This invention provides a load-balancing structure for packet switches and its constructing method. In this method, the structure based on self-routing concentrators is divided into two stages, that is, a first stage and a second stage fabric. A virtual output group queue (VOGQ) is appended to each input group port of the first stage fabric, and a reordering buffer (RB) is configured behind each output group port of the second stage fabric. Packets stored in the VOGQ are combined into data blocks with preset length, which is divided into data slices of fixed size, finally each data slice is added an address tag and is delivered to the first stage fabric for self-routing. Once reaching the RB, data slices are recombined into data blocks. This invention solves the packet out-of-sequence problem in the load-balancing Birkhoff-von Neumann switching structure and improves the end-to-end throughput.