Abstract: A substrate chucking apparatus includes an electrostatic chuck for electrostatically chucking a substrate, and a DC power supply for applying a DC chucking voltage to the electrostatic chuck. An amplitude of the chucking voltage Vc is exponentially decreased with respect to a chucking time after an operation of chucking the substrate starts. Such a control of the chucking voltage variation is executed by a control device.

Abstract: An ion source is furnished with a gas introducing mechanism for introducing an inert gas and an organometallic gas being a raw gas into a plasma production container.

Abstract: A substrate holding apparatus includes an electrostatic chuck for electrostatically chucking and holding a substrate, an chucking power supply for applying a DC chucking voltage to the electrostatic chuck, a chuck drive device for mechanically driving the electrostatic chuck, and a drive control unit for controlling the chuck drive device by applying command information. The apparatus further includes a chucking control unit which compute the accelerations at each time point that the substrate being held undergoes when the electrostatic chuck is mechanically moved, according to the command information which is applied from the drive control unit to the chuck drive device, computes an chucking force required for holding the substrate at each time point by using the accelerations thus computed, and varies an chucking voltage output from the chucking power supply according to the computed chucking force so that the electrostatic chuck generates the computed chucking force.

Abstract: A substrate chucking apparatus includes an electrostatic chuck for electrostatically chucking a substrate, and a DC power supply for applying a DC chucking voltage to the electrostatic chuck. An amplitude of the chucking voltage Vc is exponentially decreased with respect to a chucking time after an operation of chucking the substrate starts. Such a control of the chucking voltage variation is executed by a control device.