Abstract: A current leakage detection circuit that detects current leakage from a battery having a first electrode and a second electrode, which is either the positive electrode or the negative electrode opposite to the first electrode, to a chassis includes: a detection circuit including a reference voltage source terminal, a first detection terminal, and a ground terminal connected to the first electrode; a first resistor connected between the second electrode and the chassis; a second resistor connected between the chassis and the first detection terminal; and a third resistor connected between the first detection terminal and a predetermined terminal. When the first electrode is the positive electrode, the predetermined terminal is the reference voltage source terminal. When the first electrode is the negative electrode, the predetermined terminal is the first electrode. The detection circuit detects an occurrence of current leakage based on a voltage of the first detection terminal.

Abstract: An amplifier 100 with a high-frequency noise removing function according to the present invention includes: an input terminal 101 to which an input signal is input; a ground terminal 102 maintained at a reference potential; a resistor 111 connected to the input terminal; an amplifying circuit 201 configured to amplify and output the input signal input through the resistor; and an output terminal 103 through which an output signal output from the amplifying circuit is output. The amplifying circuit includes a parasitic capacitance 112 configured to be connected to between one terminal of the resistor, the terminal being located on the opposite side of the input terminal, and the ground terminal, and the resistor and the parasitic capacitance constitute a low-pass filter 113.

Abstract: A MOS transistor including a first MOS transistor M1 to be used as a resistor; an input voltage source 1 connected to the source of the first MOS transistor for applying an input voltage Vin; and a gate voltage source 6 connected to the gate of the first MOS transistor for applying a gate voltage Vg. The gate voltage Vg and the input voltage Vin are set within a range where a gate-source voltage and source-drain voltage of the first MOS transistor cause the first MOS transistor to operate in a non-saturation region and also are set to avoid the first MOS transistor operating in an operation region with leakage current. Fluctuations of the resistance value resulting from a change in leakage current due to manufacturing variations are reduced and favorable temperature characteristics are obtained.