Patents by Inventor Shuyu NI

Shuyu NI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12125950
    Abstract: A method for manufacturing a vertical blue light emitting diode (LED) includes: bonding a growth substrate to a conductive substrate; peeling off the growth substrate; etching the nitride epitaxial layer to remove the buffer layer and the undoped GaN layer and to thin the N-type GaN layer, such that a thickness of a residual nitride epitaxial layer is less than a wavelength of blue light; and forming an N-type electrode on a surface of a residual N-type GaN layer.
    Type: Grant
    Filed: January 29, 2024
    Date of Patent: October 22, 2024
    Assignee: NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS
    Inventors: Yongjin Wang, Shuyu Ni, Jialei Yuan
  • Patent number: 12100787
    Abstract: A vertical blue LED includes: a conductive substrate, the conductive substrate including a first surface and a second surface opposite to the first surface a nitride epitaxial layer; a metal reflective layer, positioned on the first surface; a nitride epitaxial layer, positioned on a surface of the metal reflective layer and including a P-type GaN layer, a quantum well layer, a preparation layer, and an N-type GaN layer that are sequentially stacked along a direction perpendicular to the conductive substrate, wherein a thickness of the nitride epitaxial layer is less than a wavelength of blue light; an N-type electrode, positioned on a surface of the N-type GaN layer; and a P-type electrode, positioned on the second surface.
    Type: Grant
    Filed: July 9, 2021
    Date of Patent: September 24, 2024
    Assignee: NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS
    Inventors: Yongjin Wang, Shuyu Ni, Jialei Yuan
  • Publication number: 20240170618
    Abstract: A method for manufacturing a vertical blue light emitting diode (LED) includes: bonding a growth substrate to a conductive substrate; peeling off the growth substrate; etching the nitride epitaxial layer to remove the buffer layer and the undoped GaN layer and to thin the N-type GaN layer, such that a thickness of a residual nitride epitaxial layer is less than a wavelength of blue light; and forming an N-type electrode on a surface of a residual N-type GaN layer.
    Type: Application
    Filed: January 29, 2024
    Publication date: May 23, 2024
    Applicant: NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS
    Inventors: Yongjin WANG, Shuyu NI, Jialei YUAN
  • Publication number: 20210336097
    Abstract: A vertical blue LED includes: a conductive substrate, the conductive substrate including a first surface and a second surface opposite to the first surface a nitride epitaxial layer; a metal reflective layer, positioned on the first surface; a nitride epitaxial layer, positioned on a surface of the metal reflective layer and including a P-type GaN layer, a quantum well layer, a preparation layer, and an N-type GaN layer that are sequentially stacked along a direction perpendicular to the conductive substrate, wherein a thickness of the nitride epitaxial layer is less than a wavelength of blue light; an N-type electrode, positioned on a surface of the N-type GaN layer; and a P-type electrode, positioned on the second surface.
    Type: Application
    Filed: July 9, 2021
    Publication date: October 28, 2021
    Applicant: NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS
    Inventors: Yongjin WANG, Shuyu NI, Jialei YUAN
  • Publication number: 20210325601
    Abstract: A homogeneous integrated infrared photonic chip and a method for manufacturing the same are provided. The homogeneous integrated infrared photonic chip includes a substrate layer, and a device structure and a waveguide structure that are both positioned on a surface of the substrate layer; wherein the device structure includes a lower contact layer, a quantum well layer, and an upper contact layer that are sequentially stacked along a direction perpendicular to the substrate layer, and the substrate layer, the lower contact layer, the quantum well layer, and the upper contact layer are made of a III-V material; and wherein the waveguide structure includes a waveguide layer made of the III-V material, the waveguide layer and the lower contact layer being arranged in the same layer.
    Type: Application
    Filed: June 28, 2021
    Publication date: October 21, 2021
    Applicant: NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS
    Inventors: Yongjin WANG, Shuyu NI, Xin LI