Patents by Inventor Shuyuan Shi

Shuyuan Shi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10923651
    Abstract: In one embodiment, a SOT device is provided that replaces a traditional NM layer adjacent to a magnetic layer with a NM layer that is compatible with CMOS technology. The NM layer may include a CMOS-compatible composite (e.g., CuPt) alloy, a TI (e.g., Bi2Se3, BixSe1-x, Bi1-xSbx, etc.) or a TI/non-magnetic metal (e.g., Bi2Se3/Ag, BixSe1-x/Ag, Bi1-xSbx/Ag, etc.) interface, that provides efficient spin current generation. Spin current may be generated in various manners, including extrinsic SHE, TSS or Rashba effect.
    Type: Grant
    Filed: August 16, 2018
    Date of Patent: February 16, 2021
    Assignee: National University of Singapore
    Inventors: Rajagopalan Ramaswamy, Yi Wang, Shuyuan Shi, Hyunsoo Yang
  • Publication number: 20200395532
    Abstract: Described is a spin torque device, and a spintronics device Incorporating the spin torque device. The spin torque device comprises a magnetic layer having a switchable magnetisation direction along a first axis, and a spin source layer adapted to generate a spin current from a current Injected along a second axis perpendicular to the first axis. Electrons of different spins in the spin source layer are rearranged by scattering so the spin current is generated in a plane perpendicular to the second axis and polarized at an angle to the first axis, so that the spin current diffuses into the magnetic layer to produce spin torque to switch the magnetisation direction.
    Type: Application
    Filed: May 29, 2020
    Publication date: December 17, 2020
    Applicant: National University of Singapore
    Inventors: Kaiming Cai, Yang Liu, Shuyuan Shi, Hyunsoo Yang
  • Publication number: 20190058113
    Abstract: In one embodiment, a SOT device is provided that replaces a traditional NM layer adjacent to a magnetic layer with a NM layer that is compatible with CMOS technology. The NM layer may include a CMOS-compatible composite (e.g., CuPt) alloy, a TI (e.g., Bi2Se3, BixSe1-x, Bi1-xSbx, etc.) or a TI/non-magnetic metal (e.g., Bi2Se3/Ag, BixSe1-x/Ag, Bi1-xSbx/Ag, etc.) interface, that provides efficient spin current generation. Spin current may be generated in various manners, including extrinsic SHE, TSS or Rashba effect.
    Type: Application
    Filed: August 16, 2018
    Publication date: February 21, 2019
    Inventors: Rajagopalan Ramaswamy, Yi Wang, Shuyuan Shi, Hyunsoo Yang
  • Publication number: 20160363691
    Abstract: The present invention provides a physical simulation experiment device of fracture-cavity carbonate reservoir hydrocarbon charge. The experiment device comprises a fracture-cavity model, an experiment stand with windows, a wall rock and a camera monitoring system; the fracture-cavity model comprises simulation caves in different sizes and simulation fractures in different sizes; the simulation caves are connected to one another via the simulation fractures; the fracture-cavity model is arranged inside the experiment stand with windows, and the simulation caves of at least one side of the fracture-cavity model are visual through the windows of the experiment stand; a surrounding of the wall rock is arranged around the fracture-cavity model to simulate a formation of fracture-cavity carbonate reservoir; the camera monitoring system is used for measuring and adjusting changes in flow rate and pressure in a charge process, and recording an image of fracture and cave in the charge process displayed in the windows.
    Type: Application
    Filed: December 30, 2015
    Publication date: December 15, 2016
    Inventors: Suyun Hu, Shuyuan Shi, Hua Jiang, Tongshan Wang, Qingchun Jiang