Abstract: A method for treating material surface utilizing atomic hydrogen. The method includes utilizing atomic hydrogen by mixing halogen and/or halide to a gas which is used for generating, atomic hydrogen in the plasma. The present method also includes utilizing a characteristics of plasma downstream (11) in which the objective surface is prevented from physical damage caused by high energy particle and undesirable reactive species are controlled so as to avoid their influence. In an alternative embodiment, the present invention includes a method for a material surface treatment utilizing atomic hydrogen without the influence of atomic oxygen by using a gas, as a plasma source, containing the molecule and/or compound of chlorine, bromine and/or iodine and not containing molecules with oxygen atom.

Abstract: A method for treating a surface of an object using a hydrogen bearing compound. The method includes a step of generating a plasma from a Gas-C in a plasma source, where the Gas-C includes at least a gas-A and a gas-B. Gas-A is selected from a compound including at least a nitrogen bearing compound (e.g., N2) or an other gas, e.g., gas of in elements in group 18 classified in the atomic periodic table. Gas-B has at least a H2O bearing compound or is preferably H2O. The method also includes a step of injecting a Gas-D downstream of the plasma source of said Gas C, and setting an object downstream of the Gas-D injection and downstream of the plasma source. The object has a surface to be processed. The method also includes a step of processing the surface of said object by a mixture species generated from the Gas-C in the plasma and the Gas-D. The H2O bearing compound in Gas-C includes a H2O bearing compound that is lower in concentration than a Gas-A concentration.

Abstract: The present invention provides a method for treating a surface of an object using, for example, a downstream region of a plasma source. The method includes a step of generating a plasma from a gas-C in a plasma source, where the gas-C includes a gas-A and a gas-B. Gas-A is selected from a compound comprising at least a nitrogen bearing compound or an other gas. The other gas is selected from a mixture of an element in group 18 classified in the atomic periodic table. Gas-B includes at least a NH3 bearing compound. The method also includes a step of injecting a gas-D downstream of the plasma source of the gas-C. The method also includes a step of setting an object (having a surface) downstream of the gas-D injection and downstream of the plasma source. A step of processing the surface of the object by a mixture species generated from the gas-C in the plasma and the gas-D is included.

Abstract: The present invention provides a method for treating a surface of an object using, for example, a downstream region of a plasma source. The method includes a step of generating a plasma from a gas-C in a plasma source, where the gas-C includes a gas-A and a gas-B. Gas-A is selected from a compound comprising at least a nitrogen bearing compound or an other gas. The other gas is selected from a mixture of an element in group 18 classified in the atomic periodic table. Gas-B includes at least a NH3 bearing compound. The method also includes a step of injecting a gas-D downstream of the plasma source of the gas-C. The method also includes a step of setting an object (having a surface) downstream of the gas-D injection and downstream of the plasma source. A step of processing the surface of the object by a mixture species generated from the gas-C in the plasma and the gas-D is included.

Abstract: A processing method includes providing a first gas including a hydrogen atom into a first chamber, igniting a plasma within the first chamber to provide a source of hydrogen atoms, passing the plasma downstream through a cavity to a second chamber disposed separately from the first chamber, and heating an object disposed within the second chamber.

Abstract: Pulsed laser beams are applied to an object to be measured. A first laser beam of a pulsed laser beam having a first wavelength which is oscillated immediately after the rise of the pulsed laser beam, and a second laser beam having a second wavelength which is oscillated thereafter are used. Based on a difference between an intensity of first interfered light of reflected light of the first laser beam or transmitted light thereof, and an intensity of reflected light of the second laser beam or transmitted light thereof, temperatures of the object to be measured, and whether the temperatures are on increase or on decrease are judged. The method and device can be realized by simple structures and can measure a direction of changes of the physical quantities.

Abstract: A method for treating a surface of an object using a hydrogen bearing compound. The method includes a step of generating a plasma from a Gas-C in a plasma source, where the Gas-C includes at least a gas-A and a gas-B. Gas-A is selected from a compound including at least a nitrogen bearing compound (e.g., N.sub.2) or an other gas, e.g., gas of in elements in group 18 classified in the atomic periodic table. Gas-B has at least a H.sub.2 O bearing compound or is preferably H.sub.2 O. The method also includes a step of injecting a Gas-D downstream of the plasma source of said Gas C, and setting an object downstream of the Gas-D injection and downstream of the plasma source. The object has a surface to be processed. The method also includes a step of processing the surface of said object by a mixture species generated from the Gas-C in the plasma and the Gas-D. The H.sub.2 O bearing compound in Gas-C includes a H.sub.2 O bearing compound that is lower in concentration than a Gas-A concentration.

Abstract: A steam supplying apparatus for supplying steam to an ashing process. The apparatus includes a closed water-containing vessel formed from a material having good heat conductive characteristics for evaporating water to provide steam to a vacuum chamber housing an on going ashing process. The closed vessel has a maximum horizontal cross sectional water evaporation area M and a minimum horizontal cross sectional water evaporation area S. The vessel is configured so that M/S<8, and the closed vessel has a submerged inside surface which is coated with a resin. The closed water-containing vessel is provided with a steam outlet connected thereto at a location above the surface of the water therein. The apparatus further includes a temperature-controlled liquid bath for the closed water-containing vessel and the vessel is at least partially submerged in the liquid bath.

Abstract: A hydrogen plasma downstream treatment equipment comprises a first gas supply source for supplying a hydrogen gas, a second gas supply source for supplying a nitrogen fluoride gas, and a tube-like chamber used for surface treatment of a semiconductor layer by use of the hydrogen gas and the nitrogen fluoride gas. The chamber includes a plasma generator for activating the hydrogen gas and the nitrogen fluoride gas by introducing the nitrogen fluoride gas in which a flow rate ratio of the hydrogen gas and the nitrogen fluoride gas is in excess of 4, a processor placed in a downstream of the plasma generator to place the semiconductor layer therein, and gas flow controlling means for controlling the first gas supply source and the second gas supply source so as to set a flow rate of the nitrogen fluoride gas four times a flow rate of the hydrogen gas.

Abstract: A method of manufacturing a semiconductor device, including the steps of: cooling a semiconductor wafer to a predetermined temperature, the semiconductor wafer being mounted on a stage provided with cooling means and having a thin oxide film on a surface thereof; supplying energy to gas containing hydrogen and water vapor to excite the gas into a plasma state; adding nitrogen fluoride downstream into a flow of the gas in the plasma state; and introducing a flow of the gas, including the nitrogen fluoride, to the semiconductor wafer to etch the thin oxide film while maintaining the semiconductor wafer at the predetermined temperature.

Abstract: A method for treating the surface of a semiconductor layer includes the step of removing an oxide from the surface of a semiconductor layer by adding fluorine or fluoride to hydrogen radicals separately from plasma atmosphere and thereafter exposing the semiconductor layer to the mixed gas and hydrogen-terminating the surface.

Abstract: The present invention relates to a hydrogen plasma down-flow processing method and a hydrogen plasma down-flow processing apparatus and has an object to provide a hydrogen plasma down-flow processing method and a hydrogen plasma down-flow processing apparatus ensuring that it is possible to make it difficult for hydrogen atoms to deposit and recombine on the internal wall of the apparatus. High speed hydrogen plasma processing can be realized by improving transfer efficiency of hydrogen atoms to the processing chamber. Moreover hydrogen plasma efficiency can also be improved by reducing influence of oxidation species such as OH radical and oxygen atom concentrations can be controlled as desired by keeping the change in hydrogen atom concentration small. The apparatus includes a vacuum chamber of which at least a part of the structural members exposed to a vacuum is made by silicon oxide.

Abstract: A method for removing a used organic resist in a downstream ashing apparatus on a silicon semiconductor wafer in which water vapor is added to an oxygen plasma gas generated by microwaves. The addition of the water vapor lowers an activation energy of the ashing reaction and increases the reactive species generated in the plasma. Accordingly, the ashing rate is increased even at a wafer processing temperature as low as 150.degree. C. The addition of water vapor increases the ashing rate for a wide range of the percentage of water content, such as 5 to 80%, allowing easy control of the process. The lowered operating temperature prevents contamination of the semiconductor wafer. Since CF.sub.4 is not used the SiO.sub.2 layer is protected from being undesirably etched and the semiconductor characteristics do not deteriorate.

Abstract: A downstream ashing apparatus for removing organic resist from a silicon semiconductor wafer. The apparatus includes a waveguide leading to a microwave cavity. A plasma generating chamber is a part of the cavity, which also includes a quartz plate that is transparent to the microwaves. A device feeds oxygen gas and water vapor to the plasma generating chamber. A plasma is generated by the microwaves from the gas mixture in the plasma generating chamber. On a wall opposite the quartz plate, a plurality of holes is provided which connects the plasma generating chamber to a reaction chamber. Only a reactive species, such as oxygen atoms, generated in the plasma, flows from the plasma generating chamber through the holes and into the reaction chamber. The microwaves do not pass into the reaction chamber. The reactive species chemically reacts with and removes the resist on the semiconductor wafer in the reaction chamber.

Abstract: A method for treating the surface of a semiconductor layer includes the step of removing an oxide from the surface of a semiconductor layer by adding fluorine or fluoride to hydrogen radicals separately from plasma atmosphere and thereafter exposing the semiconductor layer to the mixed gas and hydrogen-terminating the surface.

Abstract: A method of cleaning a hydrogen plasma down-stream apparatus for processing a material in a process chamber by guiding a down-stream of hydrogen plasma generated in a plasma generating space onto the material via a gas flow path with an inner main portion thereof being made of quartz, wherein plasma of a gas containing hydrogen, preferably containing hydrogen and water vapor, is generated in the plasma generating space, nitrogen fluoride is added at a down-stream position from the plasma, and a down-stream of the plasma is directed to the process chamber to clean the gas flow path. Amount of hydrogen radicals can be monitored by a metal sheath thermocouple. A hydrogen plasma down-stream apparatus suitable for removing a native oxide film or a resist film on the surface of silicon can be efficiently cleaned without disassembling it.

Abstract: A method for controlling an apparatus for supplying steam to an ashing process. The apparatus includes a closed water-containing vessel formed from a material having good heat conductive characteristics for evaporating water to provide steam to a vacuum chamber housing an ongoing ashing process. In accordance with the procedure, steam evaporated in a closed steam supply tank is introduced into a vacuum chamber via a pressure reducing mass-flow controller.

Abstract: Semiconductor substrates are immersed in pure water having a lowered dissolved-oxygen concentration and heated to a temperature above 60.degree. C., in an atmosphere which keeps the dissolved oxygen concentration in pure water, in order to etch oxide films on surfaces of the semiconductor substrates for cleaning the surfaces of the semiconductor substrates. According to the present invention, contaminants and residual chemicals can be effectively removed without adding any chemical treating step. The cleaning can be effective without increasing the number of chemicals, and improved throughputs of the cleaning step can be obtained.

Abstract: A method for removing a used organic resist in a downstream ashing apparatus on a silicon semiconductor wafer in which water vapor is added to an oxygen plasma gas generated by microwaves. The addition of the water vapor lowers an activation energy of the ashing reaction and increases the reactive species generated in the plasma. Accordingly, the ashing rate is increased even at a wafer processing temperature as low as 150.degree. C. The addition of water vapor increases the ashing rate for a wide range of the percentage of water content, such as 5 to 80%, allowing easy control of the process. The lowered operating temperature prevents contamination of the semiconductor wafer. Since CF.sub.4 is not used the SiO.sub.2 layer is protected from being undesirably etched and the semiconductor characteristics do not deteriorate.

Abstract: A microwave plasma processing process and apparatus useful in the fabrication of integrated circuit (IC) or similar semiconductor devices, wherein the object or material to be processed, such as a semiconductor wafer, is processed with plasma generated using microwaves transmitted through a microwave transmission window disposed perpendicular to an electric field of the progressive microwaves in the waveguide.