Abstract: A substrate processing apparatus for drying a substrate including a chamber, a vapor supply part, an open/close valve, and a controller, is disclosed. While the chamber is hermetically sealed, a substrate is cleaned by pure water. Water vapor of high temperature and pressure is thereafter supplied from the vapor supply part, to raise the temperature and pressure in the chamber. When the substrate surface is covered with pure water at a temperature of 100 degrees centigrade or higher, the controller brings the open/close valve to an open state to release the ambient atmosphere in the chamber in the atmosphere outside, thereby instantaneously bringing the chamber to a condition of reduced pressure. As a result, water mark formation caused by processing solution adhering to the substrate is suppressed in the drying process.

Abstract: A substrate cleaning and drying apparatus for performing drying treatment after cleaning treatment of substrates. The apparatus includes a treating tank for storing a treating liquid, and performing the cleaning treatment of the substrates immersed in the treating liquid, a treating chamber housing the treating tank, and having an opening formed in an upper position of the treating chamber for allowing passage of the substrates into and out of the treating chamber, a lid member movable to open and close the opening of the treating chamber, and a holding mechanism for holding the substrates within the treating tank, the holding mechanism having suction bores. After the cleaning treatment of the substrates with the treating liquid in the treating tank, a gas is supplied toward the substrates, with the lid member closed, while suction is effected through the suction bores of the holding mechanism.

Abstract: A substrate treating apparatus includes a storage block for accommodating foups each storing a plurality of substrates, a first treating block for treating a plurality of substrates en bloc, a second treating block for treating one substrate at a time, and a transport device for transporting the substrates between the foups, first treating block and second treating block. The substrates may be treated in a mode of treating a plurality of substrates en bloc, and/or a mode of treating one substrate at a time.

Abstract: A mixer produces a treating solution by mixing chloride into hot deionized water heated by a hot water unit. The treating solution produced is supplied to a treating tank through a treating solution pipe and a common pipe. In the treating tank, substrates held by a lifter are immersed in the treating solution. Subsequently, the lifter is raised to pull the substrates up from the treating solution. Since the droplets adhering to the substrates are acid, an oxidation reaction of the substrates is inhibited. That is, when the substrates dry, an oxide does not deposit on the substrates, thereby preventing formation of watermarks.

Abstract: A substrate processing apparatus admits nitrogen gas into a casing, while immersing a substrate in deionized water stored in a processing tank. Oxygen and water vapor within the casing are replaced with nitrogen gas and then removed. Subsequently, the substrate processing apparatus supplies IPA vapor toward substrates, while lifting the substrates from deionized water. Since IPA vapor is blown directly on the substrates, IPA condenses efficiently on the surfaces of the substrates. Therefore, if the concentration of IPA vapor is lowered, there is no fear of the drying performance of the substrates from deteriorating. Additionally, lowering the concentration of IPA vapor can prevent dissolution of a resist film formed on the surfaces of the substrates.

Abstract: A substrate processing apparatus for drying a substrate comprises a chamber, a vapor supply part, an open/close valve, and a controller. While the chamber is hermetically sealed, a substrate is cleaned by pure water. Water vapor of high temperature and pressure is thereafter supplied from the vapor supply part, to realize rise in temperature and pressure in the chamber. At the time when the substrate surface is covered with pure water at a temperature of 100 degrees centigrade or higher, the controller brings the open/close valve to an open state to release an atmosphere in the chamber in the atmosphere, thereby instantaneously bringing the chamber to a condition of reduced pressure. As a result, water mark formation is suppressed in a drying process of a processing solution adhered to the substrate.

Abstract: A substrate treating method for performing a predetermined treatment of substrates. The method includes a step of performing chemical treatment of the substrates with a chemical, and a step of performing deionized water cleaning treatment of the substrates with superheated steam obtained by heating deionized water.

Abstract: A substrate treating method for treating substrates with a treating solution includes a step of heating a treating solution containing sulfuric acid, and treating, with the treating solution, the substrates coated with a film material including a high dielectric-constant material. The substrates with the high dielectric-constant material are treated appropriately by heating, before use, the treating solution containing sulfuric acid.

Abstract: A method of removing a metal ion from a treating liquid for use in treating a substrate comprises the steps of: applying a first voltage via an electrode to the treating liquid that flows in a supply piping so that deposition can occur; and applying a second voltage higher than the first voltage to the electrode while distributing a cleaning liquid to the supply piping, so that ionization can occur.

Abstract: A substrate cleaning and drying apparatus for performing drying treatment after cleaning treatment of substrates. The apparatus includes a treating tank for storing a treating liquid, and performing the cleaning treatment of the substrates immersed in the treating liquid, a treating chamber housing the treating tank, and having an opening formed in an upper position of the treating chamber for allowing passage of the substrates into and out of the treating chamber, a lid member movable to open and close the opening of the treating chamber, and a holding mechanism for holding the substrates within the treating tank, the holding mechanism having suction bores. After the cleaning treatment of the substrates with the treating liquid in the treating tank, a gas is supplied toward the substrates, with the lid member closed, while suction is effected through the suction bores of the holding mechanism.

Abstract: A substrate treating apparatus and substrate treating method for performing at least cleaning treatment of substrates. The substrate are cleaned in a treating tank while a cleaning liquid (deionized water) is introduced into the treating tank through a bottom thereof and an excess amount of the cleaning liquid is allowed to overflow the tank. During the treatment, a feeding flow rate of the cleaning liquid is varied with time, to prevent a stagnation of flows in the tank and promote the effect of removing particles. The cleaning liquid in the tank is not drawn off quickly, to avoid unnecessary vibration being applied to the substrates.

Abstract: A substrate processing apparatus for drying a substrate is provided with a chamber, quartz tank, nitrogen supply part, blowing mechanism, hot water unit and substrate holding mechanism. A substrate after being subjected to cleaning with pure water is placed in the quartz tank in the chamber. This substrate is heated by immersing it into hot water supplied from the hot water unit (degassed and heated pure water), and then lifted in the atmosphere of the chamber by the substrate holding mechanism. The atmosphere of the chamber is brought into a low oxygen state by using of nitrogen gas supplied from the nitrogen supply part and blowing mechanism. Thereby, the pure water attached to the substrate evaporates by the accumulated heat of the substrate in the low oxygen atmosphere. This permits to provide a substrate processing apparatus and a substrate processing method with which it is possible to dry a substrate while suppressing the occurrence of water marks.

Abstract: A method of removing a metal ion from a treating liquid for use in treating a substrate comprises the steps of: applying a first voltage via an electrode to the treating liquid that flows in a supply piping so that deposition can occur; and applying a second voltage higher than the first voltage to the electrode while distributing a cleaning liquid to the supply piping, so that ionization can occur.

Abstract: A substrate treating method for treating substrates with a treating solution includes a step of heating a treating solution containing sulfuric acid, and treating, with the treating solution, the substrates coated with a film material including a high dielectric-constant material. The substrates with the high dielectric-constant material are treated appropriately by heating, before use, the treating solution containing sulfuric acid.