Patents by Inventor Shuzo Oshio

Shuzo Oshio has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4508968
    Abstract: A negative photoresist emulsion, wherein after a film of negative photoresist emulsion on a substrate has been exposed for pattern writing in vacuum to charged particle beams or soft X-ray beams, the film-coated substrate is transferred to, and kept in, a chamber filled with non-oxidizing gas, and then the substrate is removed to the outside atmosphere. By this method, a curing effect of the photoresist film is prevented, enabling formation of fine patterns with precision. An apparatus for carrying out the above method has a gas chamber filled with non-oxidizing gas connected to an exposure chamber, and the substrate, after such exposure, is kept in an atmosphere of non-oxidizing gas in the gas chamber before being removed to the outside atmosphere. In either the above-method or apparatus, the concentration of oxygen in the non-oxidizing gas must be less than 5%, preferably less than 1%.
    Type: Grant
    Filed: July 5, 1983
    Date of Patent: April 2, 1985
    Assignee: Fujitsu Limited
    Inventors: Koichi Kobayashi, Kenichi Kawashima, Shuzo Oshio
  • Patent number: 4426439
    Abstract: A negative photoresist emulsion, wherein after a film of negative photoresist emulsion on a substrate has been exposed for pattern writing in vacuum to charged particle beams or soft X-ray beams, the film-coated substrate is transferred to, and kept in, a chamber filled with non-oxidizing gas, and then the substrate is removed to the outside atmosphere. By this method, a curing effect of the photoresist film is prevented, enabling formation of fine patterns with precision. An apparatus for carrying out the above method, has a gas chamber filled with non-oxidizing gas connected to an exposure chamber, and the substrate, after such exposure, is kept in an atmosphere of non-oxidizing gas in the gas chamber before being removed to the outside atmosphere. In either the above-method or apparatus, the concentration of oxygen in the non-oxidizing gas must be less than 5%, preferably less than 1%.
    Type: Grant
    Filed: December 11, 1981
    Date of Patent: January 17, 1984
    Assignee: Fujitsu Limited
    Inventors: Koichi Kobayashi, Kenichi Kawashima, Shuzo Oshio