Patents by Inventor Shwangming Jen

Shwangming Jen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma treatment method for fabricating microelectronic fabrication having formed therein conductor layer with enhanced electrical properties
    Patent number: 6656832
    Abstract: A method for fabricating a microelectronic fabrication provides for forming a patterned conductor layer into a via defined by a pair of dielectric layers. Within the method, the via is plasma treated prior to forming therein the patterned conductor layer with at least one of: (1) an argon containing plasma with each of a radio frequency source power density and a radio frequency bias power density of less than about 300 watts; and (2) a hydrogen containing plasma with a radio frequency source power of greater than about 400 watts and a radio frequency bias power density of greater than about 100 watts.
    Type: Grant
    Filed: July 25, 2002
    Date of Patent: December 2, 2003
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Shing-Chyang Pan, Keng-Chu Lin, Shwangming Jen