Patents by Inventor Shwangming Jing

Shwangming Jing has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7247252
    Abstract: A method for avoiding plasma arcing during a reactive ion etching (RIE) process including providing a semiconductor wafer having a process surface for depositing a dielectric insulating layer; depositing at least a portion of a dielectric insulating layer to form a deposition layer according to plasma assisted chemical vapor deposition (CVD) process; treating the deposition layer portion with a hydrogen plasma treatment to reduce an electrical charge nonuniformity of the deposition layer including applying a biasing power to the semiconductor wafer; and, carrying out a subsequent reactive ion etching process.
    Type: Grant
    Filed: June 20, 2002
    Date of Patent: July 24, 2007
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shing-Chyang Pan, Yu-Chun Huang, Shwangming Jing
  • Publication number: 20030235994
    Abstract: A method for avoiding plasma arcing during a reactive ion etching (RIE) process including providing a semiconductor wafer having a process surface for depositing a dielectric insulating layer; depositing at least a portion of a dielectric insulating layer to form a deposition layer according to plasma assisted chemical vapor deposition (CVD) process; treating the deposition layer portion with a hydrogen plasma treatment to reduce an electrical charge nonuniformity of the deposition layer including applying a biasing power to the semiconductor wafer; and, carrying out a subsequent reactive ion etching process.
    Type: Application
    Filed: June 20, 2002
    Publication date: December 25, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shing-Chyang Pan, Yu-Chun Huang, Shwangming Jing