Patents by Inventor Shwu-Jen J. Jeng

Shwu-Jen J. Jeng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080157200
    Abstract: The present invention provides an STI bounded transistor structure having enhanced performance which is not diminished due to embedded stressor facets that can be present at the edge of the source/drain regions that contacts an embedded stressor material. Considering that the facet in the prior art is due to an STI divot formed during several necessary wet etching processes, the MOSFET source/drain edge of the inventive structure is surrounded by a liner to prevent facet growth during the epitaxial growth of the stressor material. As such, a part of the semiconductor substrate edge is preserved. The liner employed in the present invention is a stress engineering material such as, for example, silicon nitride.
    Type: Application
    Filed: December 27, 2006
    Publication date: July 3, 2008
    Applicant: International Business Machines Corporation
    Inventors: Byeong Y. Kim, Shahid A. Butt, Xiaomeng Chen, Shwu-Jen J. Jeng, Hasan M. Nayfeh, Deepal Wehella-Gamage