Patents by Inventor Shy-Shiun Chern
Shy-Shiun Chern has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20080173836Abstract: In a Valve, grid-patterned, fixed wall(s) and movable gate plate/plug are built in the hub to control the conduction area. Adjustable spring is applied to push the gate/plug firmly against the fixed wall(s). The structure alteration reduces the travel length required to switch the valve between open and closed states. Since the open/close state is self-sustaining at its last switched state due to friction, no holding energy is required in the actuator. Consequently, a small linear operation solenoid can be used in impulse mode to operate the valve. Due to its low cost, separate solenoids are used to respectively pull open and close the valve in lieu of applying an auto-direction-conversion mechanism. A bimetallic strip contact in series with a resister, packaged together in a thermal isolating tube, is used to prevent the low-duty solenoid from excessive stress-time.Type: ApplicationFiled: September 14, 2007Publication date: July 24, 2008Inventor: Shy-Shiun Chern
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Patent number: 7145707Abstract: In an optical switch for routing an optical signal, a deflecting member is mounted movably on a base and is tiltable about a fulcrum shaft so as to deflect the optical signal. Multiple elongate cantilevers are disposed on the base and are arranged around the deflecting member. Each cantilever has a coupling end portion connected to the base and opposite to a hammer end portion disposed on a periphery of the deflecting member. Control units are disposed on the base, and are operably and respectively associated with the cantilevers so as to control movement of the cantilevers to an appropriate one of a suspending position, where the hammer end portion is spaced apart from the deflecting member, and a pumping position, where the hammer end portion strikes the deflecting member, thereby forcing the deflecting member to tilt to a desired direction about the fulcrum shaft.Type: GrantFiled: August 21, 2003Date of Patent: December 5, 2006Inventor: Shy-Shiun Chern
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Publication number: 20050190425Abstract: In an optical switch for routing an optical signal, a deflecting member is mounted movably on a base and is tiltable about a fulcrum shaft so as to deflect the optical signal. Multiple elongate cantilevers are disposed on the base and are arranged around the deflecting member. Each cantilever has a coupling end portion connected to the base and opposite to a hammer end portion disposed on a periphery of the deflecting member. Control units are disposed on the base, and are operably and respectively associated with the cantilevers so as to control movement of the cantilevers to an appropriate one of a suspending position, where the hammer end portion is spaced apart from the deflecting member, and a pumping position, where the hammer end portion strikes the deflecting member, thereby forcing the deflecting member to tilt to a desired direction about the fulcrum shaft.Type: ApplicationFiled: August 21, 2003Publication date: September 1, 2005Inventor: Shy-Shiun Chern
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Patent number: 5514985Abstract: A virtual amplifier comprises a typical switched source follower circuit plus an additional switch of minimum size to perform a virtual amplification function. A capacitor is connected between the gate, which comprises a detector node, and the source, which comprises a source node, of a source follower FET. The source node is connected to the output by a first FET switch. The source node is also connected to a voltage source by a second FET switch. The voltage on the detector node is manipulated by pumping a charge into or out of the capacitor. Charge pumping is accomplished by first accumulating charge on the detector node while the source node is connected to the voltage source, and then switching the first FET switch on and the second FET switch off so that the effective capacitance of the detector node is reduced.Type: GrantFiled: December 5, 1990Date of Patent: May 7, 1996Assignee: Rockwell International CorporationInventor: Shy-Shiun Chern
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Patent number: 5399989Abstract: A voltage amplifying source follower circuit provides an output gain characteristic greater than unity with low overall noise. The circuit typically comprises a source follower FET with additional FETs to sense the output voltage and change the load current in a direction opposite to a change in the input voltage. In response to an input voltage change, the load current is varied by the source follower circuit so that the corresponding output voltage change is amplified beyond that of the input voltage change. By varying the load current in a direction opposite to the effect of a load resistance, the source follower gain is increased to greater than unity. When the input voltage increases, the output voltage increases even more because the load current is decreased correspondingly. The compact amplifying circuit can be fabricated on an integrated circuit chip outside critical unit cell areas of a focal plane array.Type: GrantFiled: December 3, 1991Date of Patent: March 21, 1995Assignee: Rockwell International CorporationInventor: Shy-Shiun Chern
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Patent number: 4090213Abstract: An induced junction solar cell is fabricated on a p-type silicon substrate by first diffusing a grid of criss-crossed current collecting n.sup.+ stripes and thermally growing a thin SiO.sub.2 film, and then, using silicon-rich chemical vapor deposition (CVD), producing a layer of SiO.sub.2 having inherent defects, such as silicon interstices, which function as deep traps for spontaneous positive charges. Ion implantation increases the stable positive charge distribution for a greater inversion layer in the p-type silicon near the surface. After etching through the oxide, to parallel collecting stripes, a pattern of metal is produced consisting of a set of contact stripes over the exposed collecting stripes and a diamond shaped pattern which functions as a current collection bus. Then the reverse side is metallized.Type: GrantFiled: June 15, 1976Date of Patent: May 16, 1978Assignee: California Institute of TechnologyInventors: Joseph Maserjian, Shy Shiun Chern, Seung P. Li
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Patent number: 4033286Abstract: An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials.Type: GrantFiled: July 12, 1976Date of Patent: July 5, 1977Assignee: California Institute of TechnologyInventors: Shy-Shiun Chern, Joseph Maserjian