Patents by Inventor Shyam Kishore Agarwal

Shyam Kishore Agarwal has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Mg-doped high-temperature superconductor having low superconducting anisotropy and method for producing the superconductor
    Patent number: 6605569
    Abstract: A Mg-doped high-temperature superconductor having low superconducting anisotropy includes a two-dimensional layered structure constituted by a charge reservoir layer and a superconducting layer, wherein some or all atoms constituting the charge reservoir layer are Cu and O atoms, metallizing or rendering the charge reservoir layer superconducting, a portion of the Ca of the CunCan+1O2n constituting the superconducting layer is replaced by Mg, increasing superconductive coupling between CuO2 layers, a thickness of the superconducting layer is increased, and therefore coherence length in a thickness direction is increased based on the uncertainty principle, lowering superconducting anisotropy.
    Type: Grant
    Filed: June 1, 2001
    Date of Patent: August 12, 2003
    Assignee: Agency of Industrial Science and Technology Ministry of International Trade and Industry
    Inventors: Hideo Ihara, Shyam Kishore Agarwal
  • Mg-doped high-temperature superconductor having low superconducting anisotropy and method for producing the superconductor
    Publication number: 20020013231
    Abstract: A Mg-doped high-temperature superconductor having low superconducting anisotropy includes a two-dimensional layered structure constituted by a charge reservoir layer and a superconducting layer, wherein some or all atoms constituting the charge reservoir layer are Cu and O atoms, metallizing or rendering the charge reservoir layer superconducting, a portion of the Ca of the CunCan-1O2n constituting the superconducting layer is replaced by Mg, increasing superconductive coupling between CuO2 layers, a thickness of the superconducting layer is increased, and therefore coherence length in a thickness direction is increased based on the uncertainty principle, lowering superconducting anisotropy.
    Type: Application
    Filed: June 1, 2001
    Publication date: January 31, 2002
    Applicant: AGY OF IND. SCI. & TEC., MIN. OF INT. TRD. & IND.
    Inventors: Hideo Ihara, Shyam Kishore Agarwal
  • MG-doped high-temperature superconductor having the superconducting anisotropy and method for producing the superconductor
    Patent number: 6281171
    Abstract: A Mg-doped high-temperature superconductor having low superconducting anisotropy includes a two-dimensional layered structure constituted by a charge reservoir layer and a superconducting layer, wherein some or all atoms constituting the charge reservoir layer are Cu and O atoms, metallizing or rendering the charge reservoir layer superconducting, a portion of the Ca of the CunCan−1O2n constituting the superconducting layer is replaced by Mg, increasing superconductive coupling between CuO2 layers, a thickness of the superconducting layer is increased, and therefore coherence length in a thickness direction is increased based on the uncertainty principle, lowering superconducting anisotropy.
    Type: Grant
    Filed: March 16, 1999
    Date of Patent: August 28, 2001
    Assignee: Agency of Industrial Science & Technology, Ministry of International Trade & Industry
    Inventors: Hideo Ihara, Shyam Kishore Agarwal