Abstract: Methods, systems and computer program products are provided for social networking. In one method, a network builder receives a digital object from the user. The digital object contains information associated with the user. The network builder extracts the information associated with the user from the digital object. The network builder further access the strength of relationships between the user and a plurality of other users, each associated with one or more social networks. The relationships strength is extracted based at least in part on the extracted information. The network builder then adds the user to one or more social networks based on the information associated with the user and the strength of the relationships between the user and the plurality of other users.

Abstract: Methods, systems and computer program products are provided for social networking. In one method, a network builder receives a digital object from the user. The digital object contains information associated with the user. The network builder extracts the information associated with the user from the digital object. The network builder further access the strength of relationships between the user and a plurality of other users, each associated with one or more social networks. The relationships strength is extracted based at least in part on the extracted information. The network builder then adds the user to one or more social networks based on the information associated with the user and the strength of the relationships between the user and the plurality of other users.

Abstract: A method of forming an improved interpoly oxide-nitride-oxide (ONO) stricture in stacked gate memory cells is provided. The top oxide layer of an interpoly ONO stack is formed using Low Pressure Chemical Vapor Deposition (LPCVD) of tetraethylorthosilicate (TEOS). As a result of the relatively low processing temperatures necessary for this step, degradation of the tunnel oxide and memory cell performance associated with high thermal-budget oxide growth processes is greatly reduced. Steam densification of the TEOS layer produces a robust top oxide for the ONO dielectric, and thus, greatly reduces erosion of the top layer TEOS during subsequent processing steps (i.e., in the context of a memory array embedded in CMOS core technology).

Abstract: Pre-conditioning method and apparatus for mitigating erase-induced stress within flash memory devices are disclosed. The pre-condition method includes subjecting flash memory cell to a short write process to at least partially discharge the cells. The pre-condition process is applied to an entire sector at one time, and is performed immediately prior to erasing (charging) the cells within the sector.