Abstract: Structures employing siloxane epoxy polymers as diffusion barriers adjacent conductive metal layers are disclosed. The siloxane epoxy polymers exhibit excellent adhesion to conductive metals, such as copper, and provide an increase in the electromigration lifetime of metal lines. In addition, the siloxane epoxy polymers have dielectric constants less then 3, and thus, provide improved performance over conventional diffusion barriers.

Abstract: A method for treating the surfaces of materials to improve wettability and adhesion of subsequently deposited polymer layers is disclosed. Suitable materials for practice of the method include polymeric materials and silicon-containing materials is disclosed. The method involves contacting at least a portion of the surface of the material with an aqueous solution of sulfuric acid or phosphoric acid, followed by rinsing with water. After the acid treatment, the contact angle of the surface decreases, and subsequently deposited polymer coatings easily wet the material's surface and exhibit enhanced adhesion. The method may be used to fabricate useful structures, such as semiconductor structures, optical waveguide structures, and coated articles.

Abstract: Semiconductor devices employing siloxane epoxy polymers as low-? dielectric films are disclosed. The devices include a semiconductor substrate, one or more metal layers or structures and one or more dielectric films, wherein at least one dielectric film in the devices is a siloxane epoxy polymer. Use of siloxane epoxy polymers is advantageous, in part, because the polymers adhere well to metals and have dielectric constants as low as 1.8. Thus, the disclosed semiconductor devices offer much better performance than devices fabricated using conventional dielectric materials. Furthermore, the siloxane epoxy polymer dielectrics are fully curable at low temperatures, exhibit low leakage currents, and remain stable at temperatures greater than 400° C.