Abstract: The present invention pertains to composite cathodes suitable for use in an electrochemical cell, said cathodes comprising: (a) an electroactive sulfur-containing cathode material, wherein said electroactive sulfur-containing cathode material, in its oxidized state, comprises a polysulfide moiety of the formula —Sm—, wherein m is an integer equal to or greater than 3; and, (b) an electroactive transition metal chalcogenide composition, which encapsulates said electroactive sulfur-containing cathode material, and which retards the transport of anionic reduction products of said electroactive sulfur-containing cathode material, said electroactive transition metal chalcogenide composition comprising an electroactive transition metal chalcogenide having the formula MjYk(OR)l wherein: M is a transition metal; Y is the same or different at each occurrence and is oxygen, sulfur, or selenium; R is an organic group and is the same or different at each occurrence; j is an integer ranging from 1 to 12; k is a number ran

Abstract: The present invention pertains to composite cathodes suitable for use in an electrochemical cell, said cathodes comprising: (a) an electroactive sulfur-containing cathode material, wherein said electroactive sulfur-containing cathode material, in its oxidized state, comprises a polysulfide moiety of the formula —Sm—, wherein m is an integer equal to or greater than 3; and, (b) an electroactive transition metal chalcogenide composition, which encapsulates said electroactive sulfur-containing cathode material, and which retards the transport of anionic reduction products of said electroactive sulfur-containing cathode material, said electroactive transition metal chalcogenide composition comprising an electroactive transition metal chalcogenide having the formula Mj Yk (OR)l wherein: M is a transition metal; Y is the same or different at each occurrence and is oxygen, sulfur, or selenium; R is an organic group and is the same or different at each occurrence; j is an integer ranging from 1 to 12; k is a number r

Abstract: The present invention pertains to solid composite cathodes which comprise (a) an electroactive sulfur-containing cathode material which, in its oxidized state, comprises a polysulfide moiety of the formula, —Sm—, wherein m is an integer from 3 to 10; and (b) a non-electroactive particulate material having a strong adsorption of soluble polysulfides. The present invention also pertains to electric current producing cells comprising such solid composite cathodes, and methods of making such solid composite cathodes and electric current producing cells.

Abstract: In accordance with the present invention, compositions and methods are provided in which the mechanical strength and durability of a precursor material having a plurality of pores is increased by a) providing a precursor material; b) treating the precursor material to form a nanoporous aerogel, preferably by using a supercritical drying process; c) providing a blending material having a reinforcing component and a volatile component; d) combining the nanoporous aerogel and the blending material to form an amalgamation layer; and e) treating the amalgamation layer to increase the mechanical strength of the layer by a substantial amount and to ultimately form a low dielectric material that can be utilized in various applications.

Abstract: The present invention relates to the planarization of surfaces as typically encountered in the fabrication of integrated circuits, particularly copper conductors and Ta/TaN barrier layers encountered in damascene and dual damascene interconnects. The present invention describes planarization methods for Cu/Ta/TaN interconnects, typically making use of a viscous overlayer tending to dwell in regions of lower surface topography, protecting said lower regions from etching by a combination of chemical and mechanical effects. In some embodiments, the viscous overlayer contains species that hinder removal of copper from regions of the surface in contact with the viscous layer. Such species may be a substantially saturated solution of copper ions among other additives, thereby hindering the dissolution of interconnect copper into the protective overlayer.

Abstract: In accordance with the present invention, compositions and methods are provided in which the mechanical strength and durability of a precursor material having a plurality of pores is increased by a) providing a precursor material; b) treating the precursor material to form a nanoporous aerogel, preferably by using a supercritical drying process; c) providing a blending material having a reinforcing component and a volatile component; d) combining the nanoporous aerogel and the blending material to form an amalgamation layer; and e) treating the amalgamation layer to increase the mechanical strength of the layer by a substantial amount, and to ultimately form a low dielectric material that can be utilized in various applications.

Abstract: An electronic component contemplated comprises a) a substrate layer, b) a dielectric layer coupled to the substrate layer, c) a barrier layer coupled to the dielectric layer, d) a conductive layer coupled to the barrier layer, and e) a protective layer coupled to the conductive layer. The electronic component contemplated herein can be produced by a) providing a substrate; b) coupling a dielectric layer to the substrate; c) coupling a barrier layer to the dielectric layer; d) coupling a conductive layer to the barrier layer; and e) coupling a protective layer to the conductive layer. The protective layer may then be cured to a desirable hardness.

Abstract: Chemical mechanical planarization or spin etch planarization of surfaces of copper, tantalum and tantalum nitride is accomplished by means of the chemical formulations of the present invention. The chemical formulations may optionally include abrasive particles and which may be chemically reactive or inert. Contact or non-contact CMP may be performed with the present chemical formulations. Substantially 1:1 removal rate selectivity for Cu and Ta/TaN is achieved.

Abstract: The present invention relates to the planarization of surfaces as typically encountered in the fabrication of integrated circuits, particularly copper conductors and Ta/TaN barrier layers encountered in damascene and dual damascene interconnects. The present invention describes planarization methods for Cu/Ta/TaN interconnects, typically making use of a viscous overlayer tending to dwell in regions of lower surface topography, protecting said lower regions from etching by a combination of chemical and mechanical effects. In some embodiments, the viscous overlayer contains species that hinder removal of copper from regions of the surface in contact with the viscous layer. Such species may be a substantially saturated solution of copper ions among other additives, thereby hindering the dissolution of interconnect copper into the protective overlayer.

Abstract: In accordance with the present invention, compositions and methods are provided in which the mechanical strength and durability of a precursor material having a plurality of pores is increased by a) providing a precursor material; b) treating the precursor material to form a nanoporous aerogel, preferably by using a supercritical drying process; c) providing a blending material having a reinforcing component and a volatile component; d) combining the nanoporous aerogel and the blending material to form an amalgamation layer; and e) treating the amalgamation layer to increase the mechanical strength of the layer by a substantial amount, and to ultimately form a low dielectric material that can be utilized in various applications.

Abstract: An electronic component contemplated comprises a) a substrate layer, b) a dielectric layer coupled to the substrate layer, c) a barrier layer coupled to the dielectric layer, d) a conductive layer coupled to the barrier layer, and e) a protective layer coupled to the conductive layer. The electronic component contemplated herein can be produced by a) providing a substrate; b) coupling a dielectric layer to the substrate; c) coupling a barrier layer to the dielectric layer; d) coupling a conductive layer to the barrier layer; and e) coupling a protective layer to the conductive layer. The protective layer may then be cured to a desirable hardness.

Abstract: In accordance with the present invention, compositions and methods are provided in which the mechanical strength and durability of a precursor material having a plurality of pores is increased by a) providing a precursor material; b) treating the precursor material to form a nanoporous aerogel, preferably by using a supercritical drying process; c) providing a blending material having a reinforcing component and a volatile component; d) combining the nanoporous aerogel and the blending material to form an amalgamation layer; and e) treating the amalgamation layer to increase the mechanical strength of the layer by a substantial amount, and to ultimately form a low dielectric material that can be utilized in various applications.

Abstract: In accordance with the present invention, compositions and methods are provided in which the mechanical strength and durability of a precursor material having a plurality of pores is increased by a) providing a precursor material; b) treating the precursor material to form a nanoporous aerogel, preferably by using a supercritical drying process; c) providing a blending material having a reinforcing component and a volatile component; d) combining the nanoporous aerogel and the blending material to form an amalgamation layer; and e) treating the amalgamation layer to increase the mechanical strength of the layer by a substantial amount, and to ultimately form a low dielectric material that can be utilized in various applications.

Abstract: An electronic component contemplated comprises a) a substrate layer, b) a dielectric layer coupled to the substrate layer, c) a barrier layer coupled to the dielectric layer, d) a conductive layer coupled to the barrier layer, and e) a protective layer coupled to the conductive layer. The electronic component contemplated herein can be produced by a) providing a substrate; b) coupling a dielectric layer to the substrate; c) coupling a barrier layer to the dielectric layer; d) coupling a conductive layer to the barrier layer; and e) coupling a protective layer to the conductive layer. The protective layer may then be cured to a desirable hardness.

Abstract: The present invention relates to the planarization of surfaces as typically encountered in the fabrication of integrated circuits, particularly copper conductors and Ta/TaN barrier layers encountered in damascene and dual damascene interconnects. The present invention describes planarization methods for Cu/Ta/TaN interconnects, typically making use of a viscous overlayer tending to dwell in regions of lower surface topography, protecting said lower regions from etching by a combination of chemical and mechanical effects. In some embodiments, the viscous overlayer contains species that hinder removal of copper from regions of the surface in contact with the viscous layer. Such species may be a substantially saturated solution of copper ions among other additives, thereby hindering the dissolution of interconnect copper into the protective overlayer.