Abstract: A method of fabrication of high-k paraelectric metal oxide films at low temperatures utilizing ordered mesoporous metal oxide thin films synthesized by organic templating methodology. The process consisting of (a) chemical solution deposition of periodic ordered mesoporous structures containing high-k metal oxide films, (b) removal of organic template additives, (c) infiltration of the pores with an appropriate second phase, and (d) low temperature thermal and/or annealing of infiltrated films.

Abstract: The present invention pertains to composite cathodes suitable for use in an electrochemical cell, said cathodes comprising: (a) an electroactive sulfur-containing cathode material, wherein said electroactive sulfur-containing cathode material, in its oxidized state, comprises a polysulfide moiety of the formula —Sm—, wherein m is an integer equal to or greater than 3; and, (b) an electroactive transition metal chalcogenide composition, which encapsulates said electroactive sulfur-containing cathode material, and which retards the transport of anionic reduction products of said electroactive sulfur-containing cathode material, said electroactive transition metal chalcogenide composition comprising an electroactive transition metal chalcogenide having the formula MjYk(OR)l wherein: M is a transition metal; Y is the same or different at each occurrence and is oxygen, sulfur, or selenium; R is an organic group and is the same or different at each occurrence; j is an integer ranging from 1 to 12; k is a number ran

Abstract: The present invention pertains to composite cathodes suitable for use in an electrochemical cell, said cathodes comprising: (a) an electroactive sulfur-containing cathode material, wherein said electroactive sulfur-containing cathode material, in its oxidized state, comprises a polysulfide moiety of the formula —Sm—, wherein m is an integer equal to or greater than 3; and, (b) an electroactive transition metal chalcogenide composition, which encapsulates said electroactive sulfur-containing cathode material, and which retards the transport of anionic reduction products of said electroactive sulfur-containing cathode material, said electroactive transition metal chalcogenide composition comprising an electroactive transition metal chalcogenide having the formula MjYk(OR)l wherein: M is a transition metal; Y is the same or different at each occurrence and is oxygen, sulfur, or selenium; R is an organic group and is the same or different at each occurrence; j is an integer ranging from 1 to 12; k is a number ran

Abstract: A method of fabrication of high-k paraelectric metal oxide films at low temperatures utilizing ordered mesoporous metal oxide thin films synthesized by organic templating methodology. The process consisting of (a) chemical solution deposition of periodic ordered mesoporous structures containing high-k metal oxide films, (b) removal of organic template additives, (c) infiltration of the pores with an appropriate second phase, and (d) low temperature thermal and/or annealing of infiltrated films.

Abstract: The present invention provides an organosiloxane comprising at least 80 weight percent of Formula I: [Y0.01-1.0SiO1.5-2]a[Z0.01-1.0SiO1.5-2]b[H0.01-1.0SiO1.5-2]c where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I. The present composition is useful in semiconductor devices and may be advantageously used as an etch stop.

Abstract: The present invention provides an organosiloxane comprising at least 80 weight percent of Formula 1: [Y0.01-1.0SiO1.5-2]a{Z0.01-1.0SiO1.5-2]b[H0.01-1.0SiO1.5-2]c (where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula 1; b is from 2 percent to 50 percent of Formula 1; and c is from 20 percent to 80 percent of Formula 1. The present organosiloxane may be used as ceramic binder, high temperature encapsulant, and fiber matrix binder. The present composition is also useful as an adhesion promoter in that it exhibits good adhesive properties when coupled with other materials in non-microelectronic or microelectronic applications. Preferably, the present compositions are used in microelectronic applications as etch stops, hardmasks, and dielectrics.

Abstract: The present invention involves the hydrothermal treatment of nanostructured films to form high k PMOD™ films for use in applications that are temperature sensitive, such as applications using a polymer based substrate. After a PMOD™ precursor is deposited and converted on a substrate, and possibly after other process steps, the amorphous, nanoporous directly patterned film is subjected to low temperature hydrothermal treatment to densify and possibly crystallize the resulting high dielectric PMOD™ film. A post hydrothermal treatment bake is then performed to remove adsorped water.

Abstract: Chemical mechanical planarization or spin etch planarization of surfaces of copper, tantalum and tantalum nitride is accomplished by means of the chemical formulations of the present invention. The chemical formulations may optionally include abrasive particles and which may be chemically reactive or inert. Contact or non-contact CMP may be performed with the present chemical formulations. Substantially 1:1 removal rate selectivity for Cu and Ta/TaN is achieved.

Abstract: The present invention involves the hydrothermal treatment of nanostructured films to form high k PMOD™ films for use in applications that are temperature sensitive, such as applications using a polymer based substrate. After a PMOD™ precursor is deposited and converted on a substrate, and possibly after other process steps, the amorphous, nanoporous directly patterned film is subjected to low temperature hydrothermal treatment to densify and possibly crystallize the resulting high dielectric PMOD™ film. A post hydrothermal treatment bake is then performed to remove adsorped water.

Abstract: This invention comprises methods for making nanostructured and nanoporous thin film structures of various compositions. These films can be directly patterned. In these methods, precursor films are deposited on a surface and different components of the precursor film are reacted under selected conditions, forming a nanostructured or nanoporous film. Such films can be used in a variety of applications, for example, low k dielectrics, sensors, catalysts, conductors or magnetic films. Nanostructured films can be created: (1) using one precursor component and two reactions, (2) using two or more components based on differential rates of photochemical conversion, (3) using two precursors based on the thermal sensitivity of one precursor and the photochemical sensitivity of the other, and (4) by photochemical reaction of a precursor film and selected removal of a largely unreacted component from the film.

Abstract: The present invention provides an organosiloxane comprising at least 80 weight percent of Formula I: [Y0.01-1.0SiO1.5-2]a[Z0.01-1.0SiO1.5-2]b[H0.01-1.0SiO1.5-2]c where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I. The present composition is useful in semiconductor devices and may be advantageously used as an etch stop.

Abstract: The present invention provides an organosiloxane comprising at least 80 weight percent of Formula I: [Y0.01-1.0SiO1.5-2]a[Z0.01-1.0SiO1.5-2]b[H0.01-1.0SiO1.5-2]c where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I.

Abstract: The present invention pertains to solid composite cathodes which comprise (a) an electroactive sulfur-containing cathode material which, in its oxidized state, comprises a polysulfide moiety of the formula, —Sm—, wherein m is an integer from 3 to 10; and (b) a non-electroactive particulate material having a strong adsorption of soluble polysulfides. The present invention also pertains to electric current producing cells comprising such solid composite cathodes, and methods of making such solid composite cathodes and electric current producing cells.

Abstract: The present invention pertains to composite cathodes suitable for use in an electrochemical cell, said cathodes comprising: (a) an electroactive sulfur-containing cathode material, wherein said electroactive sulfur-containing cathode material, in its oxidized state, comprises a polysulfide moiety of the formula —Sm—, wherein m is an integer equal to or greater than 3; and, (b) an electroactive transition metal chalcogenide composition, which encapsulates said electroactive sulfur-containing cathode material, and which retards the transport of anionic reduction products of said electroactive sulfur-containing cathode material, said electroactive transition metal chalcogenide composition comprising an electroactive transition metal chalcogenide having the formula MjYk(OR)l wherein: M is a transition metal; Y is the same or different at each occurrence and is oxygen, sulfur, or selenium; R is an organic group and is the same or different at each occurrence; j is an integer ranging from 1 to 12; k is

Abstract: Chemical mechanical planarization or spin etch planarization of surfaces of copper, tantalum and tantalum nitride is accomplished by means of the chemical formulations of the present invention. The chemical formulations may optionally include abrasive particles and which may be chemically reactive or inert. Contact or non-contact CMP may be performed with the present chemical formulations. Substantially 1:1 removal rate selectivity for Cu and Ta/TaN is achieved.

Abstract: The present invention pertains to composite cathodes suitable for use in an electrochemical cell, said cathodes comprising: (a) an electroactive sulfur-containing cathode material, wherein said electroactive sulfur-containing cathode material, in its oxidized state, comprises a polysulfide moiety of the formula —Sm—, wherein m is an integer equal to or greater than 3; and, (b) an electroactive transition metal chalcogenide composition, which encapsulates said electroactive sulfur-containing cathode material, and which retards the transport of anionic reduction products of said electroactive sulfur-containing cathode material, said electroactive transition metal chalcogenide composition comprising an electroactive transition metal chalcogenide having the formula MjYk (OR)l wherein: M is a transition metal; Y is the same or different at each occurrence and is oxygen, sulfur, or selenium; R is an organic group and is the same or different at each occurrence; j is an integer ranging from 1 to 12; k is

Abstract: The present invention pertains to solid composite cathodes which comprise (a) an electroactive sulfur-containing cathode material which, in its oxidized state, comprises a polysulfide moiety of the formula, —Sm—, wherein m is an integer from 3 to 10; and (b) a non-electroactive particulate non-fibrous material having a strong adsorption of soluble polysulfides. The present invention also pertains to electric current producing cells comprising such solid composite cathodes, and methods of making such solid composite cathodes and electric current producing cells.

Abstract: The present invention pertains to composite cathodes suitable for use in an electrochemical cell, said cathodes comprising: (a) an electroactive sulfur-containing cathode material, wherein said electroactive sulfur-containing cathode material, in its oxidized state, comprises a polysulfide moiety of the formula --S.sub.m --, wherein m is an integer equal to or greater than 3; and, (b) an electroactive transition metal chalcogenide composition, which encapsulates said electroactive sulfur-containing cathode material, and which retards the transport of anionic reduction products of said electroactive sulfur-containing cathode material, said electroactive transition metal chalcogenide composition comprising an electroactive transition metal chalcogenide having the formula M.sub.j Y.sub.k (OR).sub.

Abstract: A method for forming a thin film layer on a dielectric substrate. A nonconducting layer of material is blanket deposited on the dielectric substrate followed by a layer of polymeric dielectric material which is then patterned to partially expose the underlying layer of nonconducting material. The exposed underlying layer of material is contacted with a metallic salt solution. A key part of the present invention is the layer of nonconducting material which catalyzes the deposition of a seed layer from the metallic salt solution. Then, additional metallization may be easily electrolessly plated on the seed layer.

Abstract: A method of selectively seeding or activating metal interconnections patterned on polyimide dielectric surfaces using an aqueous solution of palladium sulfate, palladium perchlorate, palladium trifluoromethane sulfonate, palladium nitrate or other palladium salts having poorly coordinating counter ions. This strongly selective seeding and the corresponding ability to reliably remove all traces of the seeding material from the polyimide surface eliminates shorting, bridging and reduction of breakdown voltage during electroless plating of a thin layer of nickel or cobalt.