Patents by Inventor Shyh-Chyi Wang

Shyh-Chyi Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Microelectronic fabrication having sidewall passivated microelectronic capacitor structure fabricated therein
    Patent number: 6734079
    Abstract: Within a method for fabricating a microelectronic fabrication, and the microelectronic fabrication fabricated employing the method, there is formed within the microelectronic fabrication a capacitor structure which comprises a first capacitor plate layer having formed thereupon a capacitor dielectric layer in turn having formed thereupon a second capacitor plate layer, wherein each of the foregoing layers having an exposed sidewall to thus form a series of exposed sidewalls. The capacitor structure also comprises a silicon oxide dielectric layer formed passivating the series of exposed sidewalls of the first capacitor plate layer, the capacitor dielectric layer and the second capacitor plate layer a silicon oxide dielectric layer.
    Type: Grant
    Filed: June 13, 2002
    Date of Patent: May 11, 2004
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Chi-Feng Huang, Shyh-Chyi Wang, Chih-Hsien Lin, Chun-Hon Chen, Tien-I Bao, Syun-Ming Jang
  • Microelectronic fabrication having sidewall passivated microelectronic capacitor structure fabricated therein
    Publication number: 20030232481
    Abstract: Within a method for fabricating a microelectronic fabrication, and the microelectronic fabrication fabricated employing the method, there is formed within the microelectronic fabrication a capacitor structure which comprises a first capacitor plate layer having formed thereupon a capacitor dielectric layer in turn having formed thereupon a second capacitor plate layer, wherein each of the foregoing layers having an exposed sidewall to thus form a series of exposed sidewalls. The capacitor structure also comprises a silicon oxide dielectric layer formed passivating the series of exposed sidewalls of the first capacitor plate layer, the capacitor dielectric layer and the second capacitor plate layer a silicon oxide dielectric layer.
    Type: Application
    Filed: June 13, 2002
    Publication date: December 18, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi-Feng Huang, Shyh-Chyi Wang, Chih-Hsien Lin, Chun-Hon Chen, Tien-I Bao, Syun-Ming Jang