Patents by Inventor Shyh-Homg Yang

Shyh-Homg Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method For Fabricating A Multi-Gate Device
    Publication number: 20140231924
    Abstract: A device includes a wafer substrate including an isolation feature, at least two fin structures embedded in the isolation feature, and at least two gate stacks disposed around the two fin structures respectively. A first inter-layer dielectric (ILD) layer is disposed between the two gate stacks, with a dish-shaped recess formed therebetween, such that a bottom surface of the recess is below the top surface of the adjacent two gate stacks. A second ILD layer is disposed over the first ILD layer, including in the dish-shaped recess. The second ILD includes nitride material; the first ILD includes oxide material.
    Type: Application
    Filed: February 21, 2013
    Publication date: August 21, 2014
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd
    Inventors: Chih-Wei Kuo, Yuaan-Shun Chao, Hou-Yu Chen, Shyh-Homg Yang