Abstract: A method of synchronization of wireless communication system is provided. The method includes the following steps: receiving a symbol from a wireless communication system by a user equipment; detecting ISI-free region of the received symbol; setting an endpoint of a FFT window within the ISI-free region; detecting shifted primary control frequency and shifted secondary control frequency of the symbol; calculating ICFO based on the shifted primary control frequency and a primary control frequency; calculating secondary control frequency based on ICFO and shifted secondary control frequency; finding the preamble of a frame based on the secondary control frequency; and determining, based on the preamble, a start point of the frame.

Abstract: A method of synchronization of wireless communication system is provided. The method includes the following steps: receiving a symbol from a wireless communication system by a user equipment; detecting ISI-free region of the received symbol; setting an endpoint of a FFT window within the ISI-free region; detecting shifted primary control frequency and shifted secondary control frequency of the symbol; calculating ICFO based on the shifted primary control frequency and a primary control frequency; calculating secondary control frequency based on ICFO and shifted secondary control frequency; finding the preamble of a frame based on the secondary control frequency; and determining, based on the preamble, a start point of the frame.

Abstract: A baseband system includes: an estimation and compensation circuit estimating frequency-independent non-ideal effects based on an original IQ signal pair, and compensating the original IQ signal pair based on a result of the estimation to obtain a compensated IQ signal pair; a channel estimation and equalization circuit performing channel estimation and equalization based on the compensated IQ signal pair to obtain an equalized IQ signal pair; and a tracking and compensation circuit obtaining a result of tracking of residual quantities of the aforesaid non-ideal effects based on the equalized IQ signal pair, and compensating the equalized IQ signal pair based on the result of the tracking to obtain an output IQ signal pair.

Abstract: A communication system includes a baseband circuit, a transmitting end circuit, and a receiving end circuit is disclosed. The transmitting end circuit includes a digital analog conversion circuit and a transmitting end filtering circuit. The receiving end circuit includes a receiving end amplifying circuit, a receiving end filtering circuit, and an analog digital conversion circuit. A first data signal is transmitted to the analog digital conversion circuit through the digital analog conversion circuit and the transmitting end filtering circuit, so that the baseband circuit obtains a first compensation parameter. A second data signal is transmitted to the receiving end filtering circuit, the receiving end amplifying circuit and the analog digital conversion circuit through the digital analog conversion circuit and the transmitting end filtering circuit, so that the baseband circuit obtains a second compensation parameter.

Abstract: A communication system includes a baseband circuit, a transmitting end circuit, and a receiving end circuit is disclosed. The transmitting end circuit includes a digital analog conversion circuit and a transmitting end filtering circuit. The receiving end circuit includes a receiving end amplifying circuit, a receiving end filtering circuit, and an analog digital conversion circuit. A first data signal is transmitted to the analog digital conversion circuit through the digital analog conversion circuit and the transmitting end filtering circuit, so that the baseband circuit obtains a first compensation parameter. A second data signal is transmitted to the receiving end filtering circuit, the receiving end amplifying circuit and the analog digital conversion circuit through the digital analog conversion circuit and the transmitting end filtering circuit, so that the baseband circuit obtains a second compensation parameter.

Abstract: A baseband system includes: an estimation and compensation circuit estimating frequency-independent non-ideal effects based on an original IQ signal pair, and compensating the original IQ signal pair based on a result of the estimation to obtain a compensated IQ signal pair; a channel estimation and equalization circuit performing channel estimation and equalization based on the compensated IQ signal pair to obtain an equalized IQ signal pair; and a tracking and compensation circuit obtaining a result of tracking of residual quantities of the aforesaid non-ideal effects based on the equalized IQ signal pair, and compensating the equalized IQ signal pair based on the result of the tracking to obtain an output IQ signal pair.

Abstract: A master-slave flip-flop includes a master latch, a slave latch, a first logic gate and a signal transition detector. The first logic gate is receiving a reference clock and a first control clock, and outputting a first trigger signal to control one of the master latch and the slave latch, which are connected with a logic circuit, to switch to an opaque state or a transparent state, wherein the other one of the master latch and the slave latch is switched to an opaque state or a transparent state according to the reference clock. The above-mentioned master-slave flip-flop can correct sampling when a timing error occurs.

Abstract: A master-slave flip-flop includes a master latch, a slave latch, a first logic gate and a signal transition detector. The first logic gate is receiving a reference clock and a first control clock, and outputting a first trigger signal to control one of the master latch and the slave latch, which are connected with a logic circuit, to switch to an opaque state or a transparent state, wherein the other one of the master latch and the slave latch is switched to an opaque state or a transparent state according to the reference clock. The above-mentioned master-slave flip-flop can correct sampling when a timing error occurs.

Abstract: A sampling circuit includes a first latch, a second latch and a signal transition detector. The first latch is disposed on an upstream side of a logic circuit. The second latch is disposed on a downstream side of the logic circuit. The first latch and the second latch respectively switch to opposite states of an opaque state or a transparent state according to trigger signals generated by a reference clock and a control clock. The signal transition detector is configured for detecting whether the signal outputted by the logic circuit is in error or not and outputting a corresponding control clock. The above-mentioned sampling circuit can delay switching the second latch to the opaque state and switching the first latch to the transparent state to correct sampling when a timing error occurs.

Abstract: A sampling circuit includes a first latch, a second latch and a signal transition detector. The first latch is disposed on an upstream side of a logic circuit. The second latch is disposed on a downstream side of the logic circuit. The first latch and the second latch respectively switch to opposite states of an opaque state or a transparent state according to trigger signals generated by a reference clock and a control clock. The signal transition detector is configured for detecting whether the signal outputted by the logic circuit is in error or not and outputting a corresponding control clock. The above-mentioned sampling circuit can delay switching the second latch to the opaque state and switching the first latch to the transparent state to correct sampling when a timing error occurs.

Abstract: A static memory cell is provided. The static memory cell includes a data latch circuit and a voltage provider. The data latch circuit is configured to store a bit data. The data latch circuit has a first inverter and a second inverter, and the first inverter and the second inverter are coupled to each other. The first inverter and the second inverter respectively receive a first voltage and a second voltage as power voltages. The voltage provider provides the first voltage and the second voltage to the data latch circuit. When the bit data is written to the data latch circuit, the voltage provider adjusts a voltage value of one of the first and second voltages according to the bit data.

Abstract: A static memory cell is provided. The static memory cell includes a data latch circuit and a voltage provider. The data latch circuit is configured to store a bit data. The data latch circuit has a first inverter and a second inverter, and the first inverter and the second inverter are coupled to each other. The first inverter and the second inverter respectively receive a first voltage and a second voltage as power voltages. The voltage provider provides the first voltage and the second voltage to the data latch circuit. When the bit data is written to the data latch circuit, the voltage provider adjusts a voltage value of one of the first and second voltages according to the bit data.

Abstract: A static memory and a static memory cell are provided. The static memory cell includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a first switch, a second switch, a third switch, a first pull-down switch, and a second pull-down switch. When a data writing operation is performed, the latching capability of the latch circuit constituted by the first to the sixth transistors is disabled by turning off the second transistor or the fifth transistor, so that the speed of the data writing operation is increased and the data writing performance is improved. The first switch and the second switch provide a path for reading or writing data, and the third switch is coupled to a bit line for receiving data from or transmitting data to the bit line.

Abstract: The present invention provides an oscillator which is based on a 6T SRAM for measuring the Bias Temperature Instability. The oscillator includes a first control unit, a first inverter, a second control unit, and a second inverter. The first control unit is coupled with the first inverter. The second control unit is coupled with the second inverter. The first control unit and the second control unit is used to control the first inverter and the second inverter being selected, biased, and connected respectively, so that the NBTI and the PBTI of the SRAM can be measured separately, and the real time stability of the SRAM can be monitored immediately.

Abstract: A static random access memory includes a pre-charger, a first cell column array/peripheral circuit, and a first ripple buffer. The pre-charger is connected to a first local bit line in order to pre-charge the first local bit line. The first cell column array/peripheral circuit is connected to the first local bit line and has a plurality of cells for temporarily storing data. The cells are connected to the first local bit line. The first ripple buffer is connected to the first local bit line and a second local bit line in order to send the data from the first local bit line to the second local bit line.

Abstract: A single-ended SRAM including at least one memory cell and a third switch is provided. The memory cell includes a data-latching unit, a first switch, a second switch and a data-transferring unit. The data-latching unit is configured for latching the received input data and provides a storage data and the inverse data of the storage data. The first switch transfers a reference data to the data-latching unit according to a first word-line signal. The second switch transfers the reference data to the data-latching unit according to a second word-line signal. The data-transferring unit decides whether or not to transfer the reference data to the bit-line according to the storage data and a control signal. The third switch receives the reference data and the control signal and transfers the reference data to the first switch, the second switch and the data-transferring unit according to the control signal.

Abstract: A static random access memory includes a pre-charger, a first cell column array/peripheral circuit, and a first ripple buffer. The pre-charger is connected to a first local bit line in order to pre-charge the first local bit line. The first cell column array/peripheral circuit is connected to the first local bit line and has a plurality of cells for temporarily storing data. The cells are connected to the first local bit line. The first ripple buffer is connected to the first local bit line and a second local bit line in order to send the data from the first local bit line to the second local bit line.

Abstract: A threshold voltage measurement device is disclosed. The device is coupled to a 6T SRAM. The SRAM comprises two inverters each coupled to a FET. Power terminals of one inverter are in a floating state; the drain and source of the FET coupled to the inverter are short-circuited. Two voltage selectors, a resistor, an amplifier and the SRAM are connected in a negative feedback way. Different bias voltages are applied to the SRAM for measuring threshold voltages of two FETs of the other inverter and the FET coupled to the other inverter. The present invention uses a single circuit to measure the threshold voltages of the three FETs without changing the physical structure of the SRAM. Thereby is accelerated the measurement and decreased the cost of the fabrication process and measurement instruments.

Abstract: A threshold voltage measurement device is disclosed. The device is coupled to a 6T SRAM. The SRAM comprises two inverters each coupled to a FET. Power terminals of one inverter are in a floating state; the drain and source of the FET coupled to the inverter are short-circuited. Two voltage selectors, a resistor, an amplifier and the SRAM are connected in a negative feedback way. Different bias voltages are applied to the SRAM for measuring threshold voltages of two FETs of the other inverter and the FET coupled to the other inverter. The present invention uses a single circuit to measure the threshold voltages of the three FETs without changing the physical structure of the SRAM. Thereby is accelerated the measurement and decreased the cost of the fabrication process and measurement instruments.

Abstract: The present invention provides a 6T SRAM including a first inverter, a second inverter, a first pass-gate transistor, and a second pass-gate transistor. The first inverter zs a first pull-up transistor and a first pull-down transistor. The second inverter includes a second pull-up transistor and a second pull-down transistor. The gate of the second pull-up transistor is coupled with the gate of the second pull-down transistor, and the drain of the second pull-up transistor is coupled with the drain of the second pull-down transistor. The SRAM can measure the trip voltage, the read disturb voltage, and the write margin by controlling the first bit line, the second bit line, the GND, the first word line, and the voltage source without changing of the physic parameter of the SRAM.