Patents by Inventor Shyi-Ming Yeh

Shyi-Ming Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Hillock-free aluminum layer and method of forming the same
    Patent number: 7944056
    Abstract: A hillock-free conductive layer comprising at least two aluminum (Al) layers formed on a substrate, wherein said at least two Al layers comprise a barrier Al layer formed on the substrate, and a pure Al layer formed on the barrier Al layer. The barrier Al layer could be an aluminum nitride (AlNx) layer, an aluminum oxide (AlOx) layer, an aluminum oxide-nitride (AlOxNy) layer, or an Al—Nd alloy layer. Also, the pure Al layer is physically thicker than the barrier Al layer, for effectively inhibiting the occurrence of hillocks and the like.
    Type: Grant
    Filed: May 22, 2007
    Date of Patent: May 17, 2011
    Assignee: Chimei Innolux Corporation
    Inventors: Kung-Hao Chang, Shyi-Ming Yeh, Jui-Tang Yin
  • Hillock-free aluminum layer and method of forming the same
    Publication number: 20070224730
    Abstract: A hillock-free conductive layer comprising at least two aluminum (Al) layers formed on a substrate, wherein said at least two Al layers comprise a barrier Al layer formed on the substrate, and a pure Al layer formed on the barrier Al layer. The barrier Al layer could be an aluminum nitride (AlNx) layer, an aluminum oxide (AlOx) layer, an aluminum oxide-nitride (AlOxNy) layer, or an Al—Nd alloy layer. Also, the pure Al layer is physically thicker than the barrier Al layer, for effectively inhibiting the occurrence of hillocks and the like.
    Type: Application
    Filed: May 22, 2007
    Publication date: September 27, 2007
    Inventors: Kung-Hao Chang, Shyi-Ming Yeh, Jui-Tang Yin
  • Hillock-free aluminum layer and method of forming the same
    Patent number: 7235310
    Abstract: A hillock-free conductive layer comprising at least two aluminum (Al) layers formed on a substrate, wherein said at least two Al layers comprise a barrier Al layer formed on the substrate, and a pure Al layer formed on the barrier Al layer. The barrier Al layer could be an aluminum nitride (AlNx) layer, an aluminum oxide (AlOx) layer, an aluminum oxide-nitride (AlOxNy) layer, or an Al—Nd alloy layer. Also, the pure Al layer is physically thicker than the barrier Al layer, for effectively inhibiting the occurrence of hillocks and the like.
    Type: Grant
    Filed: July 8, 2004
    Date of Patent: June 26, 2007
    Assignee: CHI MEI Optoelectronics Corp.
    Inventors: Kung-Hao Chang, Shyi-Ming Yeh, Jui-Tang Yin
  • Hillock-free aluminum layer and method of forming the same
    Publication number: 20050008834
    Abstract: A hillock-free conductive layer comprising at least two aluminum (Al) layers formed on a substrate, wherein said at least two Al layers comprise a barrier Al layer formed on the substrate, and a pure Al layer formed on the barrier Al layer. The barrier Al layer could be an aluminum nitride (AlNx) layer, an aluminum oxide (AlOx) layer, an aluminum oxide-nitride (AlOxNy) layer, or an Al—Nd alloy layer. Also, the pure Al layer is physically thicker than the barrier Al layer, for effectively inhibiting the occurrence of hillocks and the like.
    Type: Application
    Filed: July 8, 2004
    Publication date: January 13, 2005
    Inventors: Kung-Hao Chang, Shyi-Ming Yeh, Jui-Tang Yin