Abstract: A synchronous buck converter using a single gate drive control is provided and includes a drive circuit, a p-type gallium nitride (p-GaN) transistor switch module and an inductor. A gallium nitride power transistor is used as an upper side transistor switch, and a PMOS power transistor is used as a lower side transistor switch in the p-GaN transistor switch module. A gate of the upper side transistor switch and a gate of the lower side transistor switch are coupled to each other and receive a switch signal provided by the drive circuit at the same time. By controlling the on and off of the upper side transistor switch and the lower side transistor switch, the problem of simultaneous activation of the upper and lower side transistor switches can be avoided.

Abstract: A control method of a minimum power input applicable to a wireless power transfer system including a power transmission unit and at least one power receiving unit is provided. The power transmission unit is electrically connected with a control voltage signal and an input voltage signal and accordingly generates the minimum power input. The power transmission unit transmits the minimum power input wirelessly through a wireless transmission to the at least one power receiving unit for receiving. By adjusting the input voltage signal, the duty ratio and resonant frequency of the control voltage signal, the present invention ensures an optimal power transmission efficiency of the wireless power transmission system. Moreover, parameters of a charge pump reservoir and gate driving circuit can be further designed in view of the trend feedback of its gate drive waveforms so as to optimize the effect of the proposed invention.

Abstract: The present disclosure provides a fast charging driver. The fast charging driver is configured to charge a battery of an electronic device. The fast charging driver includes a fast charging circuit and a charging controller. The fast charging circuit includes a first depletion-type GaN transistor, a first enhancement-type field effect transistor, a second depletion-type GaN transistor and a second enhancement-type field effect transistor. The charging controller is configured to control the fast charging circuit to operate in a constant current mode or a constant voltage mode according to a battery level of the battery. By utilizing the first depletion-type GaN transistor and the second depletion-type GaN transistor with a characteristic of a relatively low switching loss, the power consumption during charging the battery by the fast charging driver is decreased to improve the charge speed.

Abstract: An inductive resonant wireless charging system includes a resonant wireless charging transmitting device, a wireless charging relay device and an inductive wireless charging receiving device. The resonant wireless charging transmitting device transmits a high-frequency radio frequency wave. The wireless charging relay device receives the high-frequency radio frequency wave using an electromagnetic resonance way, and converts the high-frequency radio frequency wave into a low-frequency radio frequency wave to transmit the low-frequency radio frequency wave. The inductive wireless charging receiving device receives the low-frequency radio frequency wave in a manner of electromagnetic induction.

Abstract: A control method of a minimum power input applicable to a wireless power transfer system including a power transmission unit and at least one power receiving unit is provided. The power transmission unit is electrically connected with a control voltage signal and an input voltage signal and accordingly generates the minimum power input. The power transmission unit transmits the minimum power input wirelessly through a wireless transmission to the at least one power receiving unit for receiving. By adjusting the input voltage signal, the duty ratio and resonant frequency of the control voltage signal, the present invention ensures an optimal power transmission efficiency of the wireless power transmission system. Moreover, parameters of a charge pump reservoir and gate driving circuit can be further designed in view of the trend feedback of its gate drive waveforms so as to optimize the effect of the proposed invention.

Abstract: A voltage-controlled varied frequency pulse width modulator is provided, including a frequency-regulating voltage output device which receives a determining voltage, decides a resonant frequency according to the determining voltage and outputs an oscillation signal having the resonant frequency. A duty-ratio-regulating voltage output device receives the oscillation signal and a reference signal to determine a duty ratio through an inverting closed loop, so as to adjust the oscillation signal to have the duty ratio. By employing the proposed voltage-controlled modulator circuit with tunable frequency and varied pulse width of the present invention, a modulation signal having the determined resonant frequency and duty ratio is obtained. Moreover, the present invention can be further combined with gate drive waveform trend feedback designs to achieve superior power transmission efficiency of a wireless power transmission system to optimize the inventive effect of the present invention.

Abstract: A sinusoidal modulation method and a three-phase inverter are disclosed. A pulse driving signal controller is disposed to connect the three-phase inverter. The pulse driving signal controller controls the transistors of the three-arm full-bridge architecture. By examining the phase angle of the output current, operations of the upper and lower bridge power transistors can be adjusted, so that three power transistors are turned on and the other three power transistors are turned off during the PWM operations. As a result, the dead time is not required to set during the PWM operation for preventing a short-circuit due to dynamic switching errors of the upper and lower bridge power transistors. The requirements of the hardware circuits can be also reduced.

Abstract: The present invention provides a communication system between electric bikes and communication method thereof. The communication system comprises a plurality of electric bikes. Each of the electric bikes comprises a monitor module and a portable electric device, wherein the portable device further comprises a storing unit and a WiFi module. The monitor module is configured to monitor the status of the electric bike to generate a plurality of monitor information. When a temporary network is formed between the electric bikes, the electric bikes transmit the monitor information each other through the temporary network and each of the electric bikes stores the received monitor information.

Abstract: A sun tracking mechanism is provided for solar power generation, including a power unit, a linear actuator and at least two universal joints. The sun tracking mechanism outputs an angle of high precision by two axial directions provided from the universal joints, the power unit and the linear actuator. A solar power module disposed on the sun tracking mechanism generates electricity in the best light incident angle. In addition, the linear actuator provides an auxiliary supporting force to improve the wind-resistant capability.

Abstract: The present invention provides a communication system between electric bikes and communication method thereof. The communication system comprises a plurality of electric bikes. Each of the electric bikes comprises a monitor module and a portable electric device, wherein the portable device further comprises a storing unit and a WiFi module. The monitor module is configured to monitor the status of the electric bike to generate a plurality of monitor information. When a temporary network is formed between the electric bikes, the electric bikes transmit the monitor information each other through the temporary network and each of the electric bikes stores the received monitor information.

Abstract: The flow control device is provided and the method for controlling the flow. A flow control device comprises: a body including a first end, opposite second end, a first flow channel and a second flow channel, a plug and a laminar flow layer accommodated in the second flow channel; a telescopic device accommodated the length of the telescopic device is adjustable, so as to control the flow of fluid flowing through the opening area in the body.

Abstract: The present invention provides a current limit circuit apparatus, coupled with the gate of a GaN transistor. The current limit circuit comprises a diode, a first transistor, a second transistor, a first resistor, a second resistor, a third resistor and a fourth resistor. The source and the drain of the first transistor couple with the diode. The source of the second transistor couples with the gate of the first transistor. The source of the first transistor couples with the first transistor. The source of the second transistor couples with the second resistor. The third resistor couples with the fourth resistor and the gate of the first transistor. The first transistor turned off and the gate current is limited. When the current of the gate of the GaN transistor exceeds the predetermined value, the breakdown voltage is increased by limiting the gate current.

Abstract: A sun-chasing device is provided, including a base, a first transmitter disposed on the base, a second transmitter, a support, a carrier pivotally connected to the support for carrying a solar module, a first supporting component pivotally connected to the first transmitter and the carrier, and a second supporting component pivotally connected to the second transmitter and the carrier. The sun-chasing device has great rigidity and carrying ability against strong wind, and has great precision and rotation angle, such that a solar plate can precisely aim at sun for long time and thus the efficiency of a solar module is significantly increased.

Abstract: A sun-chasing device is provided, including a base, a first transmitter disposed on the base, a second transmitter, a support, a carrier pivotally connected to the support for carrying a solar module, a first supporting component pivotally connected to the first transmitter and the carrier, and a second supporting component pivotally connected to the second transmitter and the carrier. The sun-chasing device has great rigidity and carrying ability against strong wind, and has great precision and rotation angle, such that a solar plate can precisely aim at sun for long time and thus the efficiency of a solar module is significantly increased.

Abstract: An embedded industrial controller with a bicycle frame shape is disclosed. The embedded industrial controller includes a casing with the bicycle frame shape having an upper tube, a lower tube, a front fork, a rear lower fork, a rear upper fork and a base tube, a motherboard, a battery module, a power electrical port and a plurality of input and output electrical ports. The embedded industrial controller with a bicycle frame shape of the present invention has significantly improved functions than the conventional industrial controller, and further meets the conventional requirements such as dust proof, vibration proof, and heat dissipation.

Abstract: The present invention provides a high-side driver circuit including a power transistor, the first transistor, the second transistor, the second capacitor, the second diode, a start-up circuit. The start-up circuit is coupled between a resistor and the second capacitor to complete a gate driving circuit. And, the aforementioned resistor can either be the gate resistance of the power transistor or an external resistor. The design of start-up circuit enables the functionality of the bootstrap capacitor of being charged to a designate voltage level. Thus, the depletion-mode transistor can be controlled to turn on/off without a floating voltage source or a negative voltage source.

Abstract: A power circuit is applicable to a Direct Current (DC) to DC converter. The power circuit includes a gate driver circuit and a High Electron Mobility Transistor (HEMT). The gate driver circuit functions as a Sigmoid (S) function and controls a gate and a source of the HEMT with a cross voltage of the sigmoid (S) type function. Accordingly, an overall characteristic curve of the HEMT and the gate driver circuit is like a characteristic curve of a single rectifier diode, so as to achieve a rectifying, freewheeling, or reversing effect. In addition, since an energy loss is low when the HEMT is conducted, the energy loss of the whole power circuit is much less than that of a conventional diode.

Abstract: The present invention provides a current limit circuit apparatus, coupled with the gate of a GaN transistor. The current limit circuit comprises a diode, a first transistor, a second transistor, a first resistor, a second resistor, a third resistor and a fourth resistor. The source and the drain of the first transistor couple with the diode. The source of the second transistor couples with the gate of the first transistor. The source of the first transistor couples with the first transistor. The source of the second transistor couples with the second resistor. The third resistor couples with the fourth resistor and the gate of the first transistor. The first transistor turned off and the gate current is limited. When the current of the gate of the GaN transistor exceeds the predetermined value, the breakdown voltage is increased by limiting the gate current.

Abstract: The present invention provides a high-side driver circuit including a power transistor, the first transistor, the second transistor, the second capacitor, the second diode, a start-up circuit. The start-up circuit is coupled between a resistor and the second capacitor to complete a gate driving circuit. And, the aforementioned resistor can either be the gate resistance of the power transistor or an external resistor. The design of start-up circuit enables the functionality of the bootstrap capacitor of being charged to a designate voltage level. Thus, the depletion-mode transistor can be controlled to turn on/off without a floating voltage source or a negative voltage source.

Abstract: A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes a substrate, a die and a medium. The substrate has an upper substrate surface. The substrate has a trench extended downward from the upper substrate surface. The trench has a side trench surface. The die is in the trench. The die has a lower die surface and a side die surface. The lower die surface is below the upper substrate surface. A part of the trench between the side trench surface and the side die surface is filled with the medium.