Abstract: A process for fabricating a MOSFET device, featuring source/drain extension regions, formed after the utilization of high temperature processes, such as heavily doped source/drain regions, has been developed. Disposable insulator spacers are formed on the sides of doped, SEG silicon regions, followed formation of a gate insulator layer, and an overlying gate structure, on a region of the semiconductor substrate located between the doped SEG silicon regions. The temperature experienced during these process steps result in the formation of the heavily doped source/drain, underlying the SEG silicon regions. Selective removal of the disposable spacers, allows the source/drain extension regions to be placed in the space vacated by the disposable spacers, adjacent to the heavily doped source/drain region. Insulator spacers are then used to fill the spaces vacated by removal of the disposable spacers, directly overlying the source/drain extension regions.

Abstract: A method of fabricating an SOI transistor device comprises the following steps. a silicon semiconductor structure is provided. A silicon oxide layer is formed over the silicon semiconductor structure. A silicon-on-insulator layer is formed over the oxide layer. A well is implanted in the silicon-on-insulator layer. A gate oxide layer is grown over the silicon-on-insulator layer. A polysilicon layer is deposited over the gate oxide layer. The polysilicon layer, gate oxide layer, and silicon oxide layer are patterned and etched to form trenches. The trenches are filled with an isolation material to at least a level even with a top surface of the polysilicon layer to form raised shallow trench isolation regions (STIs). The polysilicon layer is patterned and the non-gate portions are removed polysilicon adjacent the raised STIs forming a gate conductor between the raised STIs with the gate conductor and said raised STIs having exposed sidewalls.

Abstract: A method of fabricating a MOS device having raised source/drain, raised isolation regions having isolation spacers, and a gate conductor having gate spacers is achieved. A layer of gate silicon oxide is grown over the surface of a semiconductor structure. A polysilicon layer is deposited overlying the gate silicon oxide layer. The polysilicon layer, gate silicon oxide layer and semiconductor structure are patterned and etched to form trenches. The trenches are filled with an isolation material to at least a level even with a top surface of the polysilicon layer to form raised isolation regions. The remaining polysilicon layer is patterned to remove polysilicon adjacent the raised isolation regions forming a gate conductor between the raised isolation regions. The gate conductor and the raised isolation regions having exposed sidewalls. The gate oxide layer between the gate conductor and raised isolation regions is removed.