Abstract: A magnetic random access memory (MRAM) device disclosed herein includes an array of magnetic memory cells having magnetoresistive (MR) stacks. The MRAM array also includes a series of bit lines and word lines coupled to the MR stacks. The array layout provides for reduced crosstalk between neighboring memory cells by increasing a distance between neighboring MR stacks along a common conductor without increasing the overall layout area of the MRAM array. Several embodiments are disclosed where neighboring MR stacks are offset such that the MR stacks are staggered. For example, groups of MR stacks coupled to a common word line or to a common bit line can be staggered. The staggered layout provides for increased distance between neighboring MR stacks for a given MRAM array area, thereby resulting in a reduction of crosstalk, for example during write operations.

Abstract: A magnetic random access memory (MRAM) device disclosed herein includes an array of magnetic memory cells having magnetoresistive (MR) stacks. The MRAM array also includes a series of bit lines and word lines coupled to the MR stacks. The array layout provides for reduced crosstalk between neighboring memory cells by increasing a distance between neighboring MR stacks along a common conductor without increasing the overall layout area of the MRAM array. Several embodiments are disclosed where neighboring MR stacks are offset such that the MR stacks are staggered. For example, groups of MR stacks coupled to a common word line or to a common bit line can be staggered. The staggered layout provides for increased distance between neighboring MR stacks for a given MRAM array area, thereby resulting in a reduction of crosstalk, for example during write operations.