Abstract: A semiconductor device package and a method of forming the same are provided. The semiconductor device package includes a package substrate having a first surface and a second surface opposite to the first surface. Several integrated devices are bonded to the first surface of the package substrate. A first underfill element is disposed over the first surface and surrounds the integrated devices. A first molding layer is disposed over the first surface and surrounds the integrated devices and the first underfill element. A semiconductor die is bonded to the second surface of the package substrate. A second underfill element is disposed over the second surface and surrounds the semiconductor die. A second molding layer is disposed over the second surface and surrounds the semiconductor die and the second underfill element. Several conductive bumps are disposed over the second surface and adjacent to the second molding layer.

Abstract: A semiconductor device package and a method of forming the same are provided. The semiconductor device package includes a package substrate having a first surface and a second surface opposite to the first surface. Several integrated devices are bonded to the first surface of the package substrate. A first underfill element is disposed over the first surface and surrounds the integrated devices. A first molding layer is disposed over the first surface and surrounds the integrated devices and the first underfill element. A semiconductor die is bonded to the second surface of the package substrate. A second underfill element is disposed over the second surface and surrounds the semiconductor die. A second molding layer is disposed over the second surface and surrounds the semiconductor die and the second underfill element. Several conductive bumps are disposed over the second surface and adjacent to the second molding layer.

Abstract: A chip package includes a substrate, a semiconductor chip, and a thermal conductive structure. The chip package includes a first and a second support structures below the thermal conductive structure. The first and the second support structures connect the substrate and corners of the thermal conductive structure. The thermal conductive structure has a side edge connecting the first and the second support structures. The first and the second support structures and the side edge together define of an opening exposing a space surrounding the semiconductor chip. The first and the second support structures are disposed along a side of the substrate. The first support structure is laterally separated from the side of the substrate by a first lateral distance. The side edge of the thermal conductive structure is laterally separated from the side of the substrate by a second lateral distance different than the first lateral distance.

Abstract: A semiconductor die package is provided. The semiconductor die package includes a semiconductor die and a package substrate supporting and electrically connected to the semiconductor die. The semiconductor die has a corner. The package substrate includes several conductive lines, and one of the conductive lines under the corner of the semiconductor die includes a first line segment and a second line segment connected to the first line segment. The first line segment is linear and extends in a first direction. The second line segment is non-linear and has a varying extension direction.

Abstract: A laser-less packaging substrate fabrication process is provided. A substrate plate including through-plate metal via structures is provided. At least one interconnect-level structure may be formed by performing a unit sequence of processing steps that includes: a metal seed deposition step; a first masking step; a first electroplating step that forms metal lines; a second masking step; a second electroplating step that forms metal via structures; a seed layer etch step; a dielectric material deposition step that forms a dielectric material layer; and a planarization step that removes portions of the dielectric material layer that are more distal from the substrate plate than distal horizontal surfaces of the metal via structures. Laser drilling processing steps are not necessary during manufacture of the packaging substrate.

Abstract: A semiconductor die package is provided. The semiconductor die package includes a semiconductor die and a package substrate disposed below the semiconductor die. The semiconductor die has a corner. The package substrate includes several conductive lines, and one of the conductive lines under the corner of the semiconductor die includes a first line segment and a second line segment. The first and second line segments are connected together, and the second line segment has a smaller line width than the first line segment. The first line segment is linear and extends in a first direction. The second line segment is non-linear and has a varying extension direction.

Abstract: A chip package is provided. The chip package includes a substrate and a semiconductor chip over the substrate. The chip package also includes an upper plate extending across edges of the semiconductor chip. The chip package further includes a first support structure connecting a first corner portion of the substrate and a first corner of the upper plate. In addition, the chip package includes a second support structure connecting a second corner portion of the substrate and a second corner of the upper plate. The upper plate has a side edge connecting the first support structure and the second support structure, and the side edge extends across opposite edges of the semiconductor chip.

Abstract: A chip package structure is provided. The chip package structure includes a first chip structure including a substrate and an interconnect layer over the substrate. The chip package structure includes a second chip structure over the interconnect layer. The chip package structure includes a first conductive bump connected between the interconnect layer and the second chip structure. The chip package structure includes a conductive pillar over the interconnect layer, wherein a first thickness of the conductive pillar is substantially equal to a sum of a second thickness of the second chip structure and a third thickness of the first conductive bump. The chip package structure includes a molding layer over the interconnect layer and surrounding the second chip structure, the first conductive bump, and the conductive pillar. The chip package structure includes a second conductive bump over a first surface of the conductive pillar.

Abstract: A semiconductor package includes: a substrate; a first dielectric layer over the substrate; a first bond pad and a second bond pad over the first dielectric layer, the first bond pad having a first sidewall facing the second bond pad; a second dielectric layer over the first and the second bond pads; and an opening through the second dielectric layer and extending from the first bond pad to the second bond pad, the opening including a first area over and exposing the first bond pad, where in a top view, the opening exposes a first segment of the first sidewall disposed between a first edge and a second edge of the first area that intersect the first sidewall, where the first segment of the first sidewall is between a second segment and a third segment of the first sidewall, the second segment being covered by the second dielectric layer.

Abstract: A semiconductor package includes: a substrate; a first dielectric layer over the substrate; a first bond pad and a second bond pad over the first dielectric layer, the first bond pad having a first sidewall facing the second bond pad; a second dielectric layer over the first and the second bond pads; and an opening through the second dielectric layer and extending from the first bond pad to the second bond pad, the opening including a first area over and exposing the first bond pad, where in a top view, the opening exposes a first segment of the first sidewall disposed between a first edge and a second edge of the first area that intersect the first sidewall, where the first segment of the first sidewall is between a second segment and a third segment of the first sidewall, the second segment being covered by the second dielectric layer.

Abstract: A chip package structure is provided. The chip package structure includes a first chip structure including a substrate and an interconnect layer over the substrate. The chip package structure includes a second chip structure over the interconnect layer. The chip package structure includes a first conductive bump connected between the interconnect layer and the second chip structure. The chip package structure includes a conductive pillar over the interconnect layer. The chip package structure includes a molding layer over the interconnect layer and surrounding the second chip structure, the first conductive bump, and the conductive pillar. The chip package structure includes a second conductive bump over a first surface of the conductive pillar. The first surface faces away from the first chip structure.

Abstract: Semiconductor device includes a circuit substrate, a first semiconductor die and a package lid. The first semiconductor die is disposed on and electrically connected to the circuit substrate. The package lid extends over the first semiconductor die and is bonded to the circuit substrate. the package lid comprises a roof extending, a footing and an island. The roof extends along a first direction and a second direction perpendicular to the first direction. The footing is disposed at a peripheral edge of the roof and protrudes from the roof towards the circuit substrate along a third direction perpendicular to the first direction and the second direction. The island protrudes from the roof towards the circuit substrate, wherein the island is disconnected from the footing along the second direction, and the island is physically connected to the footing along the first direction.

Abstract: Semiconductor device includes circuit substrate, first semiconductor die, thermal interface material, package lid. First semiconductor die is disposed on and electrically connected to circuit substrate. Thermal interface material is disposed on first semiconductor die at opposite side of first semiconductor die with respect to circuit substrate. Package lid extends over first semiconductor die and is bonded to the circuit substrate. Package lid includes roof, footing, and island. Roof extends along first direction and second direction perpendicular to first direction. Footing is disposed at peripheral edge of roof and protrudes from roof towards circuit substrate along third direction perpendicular to first direction and second direction. Island protrudes from roof towards circuit substrate and contacts thermal interface material on first semiconductor die. Island is disconnected from footing along second direction.

Abstract: A package structure is provided, including a substrate, a first passivation layer, a metallization layer, a second passivation layer, and a polymer layer. The first passivation layer is formed over the substrate. The metallization layer is conformally formed on the first passivation layer. The second passivation layer is conformally formed on the first passivation layer and the metallization layer. A step structure is formed on the top surface of the second passivation layer, and includes at least one lower part that is lower than the other parts of the step structure. The polymer layer is formed over the second passivation layer. A portion of the polymer layer extends into the lower part of the step structure to engage with the step structure.

Abstract: A semiconductor die package is provided. The semiconductor die package includes a semiconductor die and a package substrate disposed below the semiconductor die. The semiconductor die has a corner. The package substrate includes several conductive lines, and one of the conductive lines under the corner of the semiconductor die includes a first line segment and a second line segment. The first and second line segments are connected together, and the second line segment has a smaller line width than the first line segment. The first line segment is linear and extends in a first direction. The second line segment is non-linear and has a varying extension direction.

Abstract: A semiconductor device package and a method of forming the same are provided. The semiconductor device package includes a package substrate having a first surface and a second surface opposite to the first surface. Several integrated devices are bonded to the first surface of the package substrate. A first underfill element is disposed over the first surface and surrounds the integrated devices. A first molding layer is disposed over the first surface and surrounds the integrated devices and the first underfill element. A semiconductor die is bonded to the second surface of the package substrate. A second underfill element is disposed over the second surface and surrounds the semiconductor die. A second molding layer is disposed over the second surface and surrounds the semiconductor die and the second underfill element. Several conductive bumps are disposed over the second surface and adjacent to the second molding layer.

Abstract: A chip package structure is provided. The chip package structure includes a first chip structure including a substrate and an interconnect layer over the substrate. The chip package structure includes a second chip structure over the interconnect layer. The chip package structure includes a first conductive bump connected between the interconnect layer and the second chip structure. The chip package structure includes a conductive pillar over the interconnect layer. The chip package structure includes a molding layer over the interconnect layer and surrounding the second chip structure, the first conductive bump, and the conductive pillar. The chip package structure includes a second conductive bump over a first surface of the conductive pillar. The first surface faces away from the first chip structure.

Abstract: A chip package is provided. The chip package includes a substrate and a semiconductor chip over the substrate. The chip package also includes an upper plate extending across edges of the semiconductor chip. The chip package further includes a first support structure connecting a first corner portion of the substrate and a first corner of the upper plate. In addition, the chip package includes a second support structure connecting a second corner portion of the substrate and a second corner of the upper plate. The upper plate has a side edge connecting the first support structure and the second support structure, and the side edge extends across opposite edges of the semiconductor chip.

Abstract: Semiconductor device includes circuit substrate, first semiconductor die, thermal interface material, package lid. First semiconductor die is disposed on and electrically connected to circuit substrate. Thermal interface material is disposed on first semiconductor die at opposite side of first semiconductor die with respect to circuit substrate. Package lid extends over first semiconductor die and is bonded to the circuit substrate. Package lid includes roof, footing, and island. Roof extends along first direction and second direction perpendicular to first direction. Footing is disposed at peripheral edge of roof and protrudes from roof towards circuit substrate along third direction perpendicular to first direction and second direction. Island protrudes from roof towards circuit substrate and contacts thermal interface material on first semiconductor die. Island is disconnected from footing along second direction.

Abstract: Structures and formation methods of a chip package are provided. The chip package includes a substrate and a semiconductor die over the substrate. The chip package also includes a lid covering a top surface of the semiconductor die. The lid has a first support structure and a second support structure, and the first support structure and the second support structure are positioned at respective corner portions of the substrate. An opening penetrates through the lid to expose a space containing the semiconductor die, and the lid has a side edge extending from an edge of the first support structure to an edge of the second support structure.