Patents by Inventor Shyuz Fong Quek

Shyuz Fong Quek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming of high K metallic dielectric layer
    Patent number: 6492242
    Abstract: A process for forming a high dielectric constant, (High K), layer, for a metal-oxide-metal, capacitor structure, featuring localized oxidation of an underlying metal layer, performed at a temperature higher than the temperature experienced by surrounding structures, has been developed. A first iteration of this process features the use of a laser ablation procedure, performed to a local region of an underlying metal layer, in an oxidizing ambient. The laser ablation procedure creates the desired, high temperature, only at the laser spot, allowing a high K layer to be created at this temperature, while the surrounding structures on a semiconductor substrate, not directly exposed to the laser ablation procedure remain at lower temperatures.
    Type: Grant
    Filed: July 3, 2000
    Date of Patent: December 10, 2002
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Alex See, Cher Liang Randall Cha, Shyuz Fong Quek, Ting Cheong Ang, Wye Boon Loh, Sang Yee Loong, Jun Song, Chua Chee Tee