Abstract: An apparatus and method of compensating for a direct voltage offset in a direct conversion receiver of a wireless communications system is provided.

Abstract: An apparatus and method of compensating for a direct voltage offset in a direct conversion receiver of a wireless communications system is provided.

Abstract: A direct gate drive current reference source circuit is provided. The direct gate drive current reference source circuit includes a reference voltage generation core outputting a reference voltage of constant magnitude and a transistor directly receiving the reference voltage from the reference voltage generation core, without a resistor between the transistor and a ground.

Abstract: Sensing circuit for a semiconductor device and a sensing method using the same which allows sensing of a selected nonvolatile memory cell at a low voltage, a low power, and a fast speed, and has a high sensing reliability, the circuit including a bitline connected to a drain terminal of a memory cell through a Y-decoder, a senseline for sensing, and forwarding a data in the memory cell, a switching unit for switching between the bitline and the senseline, a first current supply unit disposed between a power source and the bitline for supplying a current to the bitline to the memory cell, a second current supply unit disposed between the power source and the senseline for supplying a current to the senseline, a voltage level shifter for providing a voltage difference between the bitline and the senseline, and a sense MOS transistor disposed between the senseline and the ground voltage and having a gate terminal connected to one end of the voltage level shifter.

Abstract: A device and method for sensing data in a multi-bit memory cell of a memory cell array unit is provided where each memory cell has at least two threshold voltage levels. The device can include a multistep current source unit to provide quantized voltages, each having a width smaller than a threshold voltage distribution in a selected memory cell, according to a current flowing through the selected memory cell. An analog-to-digital converter compares the quantized voltages from the multistep current source unit with a plurality of reference voltages to provide a state of the memory cell in binary form. The device and method for sensing data in the multi-bit memory cell uses the quantized voltages to increase sensing reliability, increases sensing speed and increases a gap between the quantized voltages relative to the threshold voltage distribution.