Abstract: A method, system, and computer program product for script generation and recommendation from behavior trees are provided. The method receives a set of input commands within a programming interface. The set of input commands is parsed into a set of command parts. The set of input commands is normalized based on the set of command parts to generate a set of normalized commands. A set of behavior trees are generated based on the set of normalized commands and the set of parts. The method generates a set of command scripts based on the set of behavior trees.

Abstract: Disclosed is a composition for inhibiting nitrate decomposition and its preparation method, which belongs to a field of photocatalytic technology, comprising: weighing titanium dioxide and pure phase metal carbonate or pure phase metal bicarbonate proportionally; adding the weighed pure phase metal carbonate or the pure phase metal bicarbonate to titanium dioxide for grinding to obtain a metal carbonate/bicarbonate-containing mixture. The method of inhibiting nitrate decomposition using the metal carbonate/bicarbonate of the present disclosure has a significant ability to inhibit nitrate decomposition, and the experimental results show that the method of inhibiting nitrate decomposition using the metal carbonate/bicarbonate can effectively inhibit the decomposition of the nitrate under irradiation for a long time.

Abstract: An array substrate manufacturing method and an array substrate are provided. The array substrate manufacturing method uses an organic photoresist material to form a passivation protection layer for substituting the conventional passivation protection layer that is made of a silicon nitride material and applies one mask to subject the passivation protection layer and a planarization layer to exposure and development so as to obtain a third via that is located above the first drain electrode and a fourth via that is located above the second drain electrode and, thus, compared to the prior art techniques, saves one mask and reduces one etching process so as to achieve the purposes of simplifying the manufacturing process and saving manufacturing cost. The array substrate so manufactured has a simple structure and a low manufacturing cost and possesses excellent electrical performance.

Abstract: A manufacture method of a low temperature poly-silicon array substrate is provided. A halftone mask is utilized to realize a patterning process applied to a polysilicon layer and an N type heavy doping process of a polysilicon section of an NMOS region. In comparison with prior art, one mask is saved, and thus, the production cost is reduced, and a low temperature poly-silicon array substrate manufactured with such a process possesses excellent electronic property.

Abstract: A manufacture method of a low temperature poly-silicon array substrate is provided. A halftone mask is utilized to realize a patterning process applied to a polysilicon layer and an N type heavy doping process of a polysilicon section of an NMOS region. In comparison with prior art, one mask is saved, and thus, the production cost is reduced, and a low temperature poly-silicon array substrate manufactured with such a process possesses excellent electronic property.

Abstract: An array substrate manufacturing method and an array substrate are provided. The array substrate manufacturing method uses an organic photoresist material to form a passivation protection layer for substituting the conventional passivation protection layer that is made of a silicon nitride material and applies one mask to subject the passivation protection layer and a planarization layer to exposure and development so as to obtain a third via that is located above the first drain electrode and a fourth via that is located above the second drain electrode and, thus, compared to the prior art techniques, saves one mask and reduces one etching process so as to achieve the purposes of simplifying the manufacturing process and saving manufacturing cost. The array substrate so manufactured has a simple structure and a low manufacturing cost and possesses excellent electrical performance.

Abstract: The present invention provides a manufacture method of a Low Temperature Poly-silicon array substrate. A halftone mask is utilized to realize the pattern process to the polysilicon layer and the N type heavy doping process of the polysilicon section of the NMOS region. In comparison with prior art, one mask is eliminated, and thus, the production cost is reduced, and the manufactured Low Temperature Poly-silicon array substrate possesses fine electronic property.

Abstract: The present invention provides an array substrate manufacturing method and an array substrate. The array substrate manufacturing method of the present invention uses an organic photoresist material to form a passivation protection layer (90) for substituting the conventional passivation protection layer that is made of a silicon nitride material and applies one mask to subject the passivation protection layer (90) and a planarization layer (70) to exposure and development so as to obtain a third via (91) that is located above the first drain electrode (62) and a fourth via (92) that is located above the second drain electrode (64) and, thus, compared the prior art techniques, saves one mask and reduces one etching process so as to achieve the purposes of simplifying the manufacturing process and saving manufacturing cost. The array substrate of the present invention has a simple structure and low manufacturing cost and possesses excellent electrical performance.

Abstract: The present invention provides a manufacture method of a Low Temperature Poly-silicon array substrate. A halftone mask is utilized to realize the pattern process to the polysilicon layer and the N type heavy doping process of the polysilicon section of the NMOS region. In comparison with prior art, one mask is eliminated, and thus, the production cost is reduced, and the manufactured Low Temperature Poly-silicon array substrate possesses fine electronic property.

Abstract: The present invention provides an array substrate manufacturing method and an array substrate. The array substrate manufacturing method of the present invention uses an organic photoresist material to form a passivation protection layer (90) for substituting the conventional passivation protection layer that is made of a silicon nitride material and applies one mask to subject the passivation protection layer (90) and a planarization layer (70) to exposure and development so as to obtain a third via (91) that is located above the first drain electrode (62) and a fourth via (92) that is located above the second drain electrode (64) and, thus, compared the prior art techniques, saves one mask and reduces one etching process so as to achieve the purposes of simplifying the manufacturing process and saving manufacturing cost. The array substrate of the present invention has a simple structure and low manufacturing cost and possesses excellent electrical performance.