Patents by Inventor SIHAI CHEN

SIHAI CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11581239
    Abstract: Some implementations of the disclosure are directed to a thermal interface material. In some implementations, a method comprises: applying a solder paste between a surface of a heat generating device and a surface of a heat transferring device to form an assembly; and reflow soldering the assembly to form a solder composite, wherein the solder composite provides a thermal interface between the heat generating device and the heat transferring device, wherein the solder paste comprises: a solder powder; particles having a higher melting temperature than a soldering temperature of the solder paste, wherein the solder paste has a volume ratio of solder powder to high melting temperature particles between 5:1 and 1:1.5; and flux.
    Type: Grant
    Filed: January 31, 2020
    Date of Patent: February 14, 2023
    Assignee: INDIUM CORPORATION
    Inventors: Ning-Cheng Lee, Runsheng Mao, Sihai Chen, Elaina Zito, David Bedner
  • Publication number: 20200235033
    Abstract: Some implementations of the disclosure are directed to a thermal interface material. In some implementations, a method comprises: applying a solder paste between a surface of a heat generating device and a surface of a heat transferring device to form an assembly; and reflow soldering the assembly to form a solder composite, wherein the solder composite provides a thermal interface between the heat generating device and the heat transferring device, wherein the solder paste comprises: a solder powder; particles having a higher melting temperature than a soldering temperature of the solder paste, wherein the solder paste has a volume ratio of solder powder to high melting temperature particles between 5:1 and 1:1.5; and flux.
    Type: Application
    Filed: January 31, 2020
    Publication date: July 23, 2020
    Inventors: Ning-Cheng Lee, Runsheng Mao, Sihai Chen, Elaina Zito, David Bedner
  • Patent number: 9875983
    Abstract: A sintering paste includes solvent and nanomicrocrystallite (NMC) particles. Each NMC particle is a single crystallite having at least one dimension in the range of 1 nm to 100 nm and at least one dimension in the range of 0.1 ?m to 1000 ?m. The sintering paste may be used in a pressureless sintering process to form a low porosity joint having high bond strength, high electrical and thermal conductivity, and high thermal stability.
    Type: Grant
    Filed: April 29, 2016
    Date of Patent: January 23, 2018
    Assignee: Indium Corporation
    Inventors: Sihai Chen, Ning-Cheng Lee
  • Publication number: 20170317046
    Abstract: A sintering paste includes solvent and nanomicrocrystallite (NMC) particles. Each NMC particle is a single crystallite having at least one dimension in the range of 1 nm to 100 nm and at least one dimension in the range of 0.1 ?m to 1000 ?m. The sintering paste may be used in a pressureless sintering process to form a low porosity joint having high bond strength, high electrical and thermal conductivity, and high thermal stability.
    Type: Application
    Filed: April 29, 2016
    Publication date: November 2, 2017
    Applicant: Indium Corporation
    Inventors: Sihai Chen, Ning-Cheng Lee
  • Publication number: 20170271294
    Abstract: Methods and compositions are described for controlling bond line thickness of a joint formed during sintering. Spacer particles of a predetermined particle type and size are added in a predetermined concentration to a sintering paste to form a sintering paste mixture prior to sintering to achieve a targeted bond line thickness during sintering. The sintering paste mixture can be sintered under pressure and pressure-less process conditions. Under pressured sintering, the amount of pressure applied during sintering may be adjusted depending on the composition and concentration of the spacer particles to adjust bond line thickness.
    Type: Application
    Filed: March 15, 2017
    Publication date: September 21, 2017
    Applicant: Indium Corporation
    Inventors: Sihai Chen, Ning-Cheng Lee
  • Patent number: 9190377
    Abstract: A process of making efficient metal bump bonding with relative low temperature, preferably lower than the melting point of Indium, is described. To obtaining a lower processing temperature (preferred embodiments have a melting point of <100° C.), a metal or alloy layer is deposited on the indium bump surface. Preferably, the material is chosen such that the metal or alloy forms a passivation layer that is more resistant to oxidation than the underlying indium material. The passivation material is also preferably chosen to form a low melting temperature alloy with indium at the indium bump surface. This is typically accomplished by diffusion of the passivation material into the indium to form a diffusion layer alloy. Various metals, including Ga, Bi, Sn, Pb and Cd, that can be used to form a binary to quaternary low melting point alloy with indium.
    Type: Grant
    Filed: June 24, 2011
    Date of Patent: November 17, 2015
    Assignee: Indium Corporation
    Inventors: Sihai Chen, Ning-Cheng Lee
  • Patent number: 9120930
    Abstract: A high emissive paint comprises organic materials with different functional groups, one or more inorganic materials, and optionally other paint property adjusting agents. The infrared absorption range of the paint derives from organic functional groups, such as C—C, C—H, N—H, C—N, C—O and C—X groups, and the one or more inorganic materials. One or more inorganic materials may also be present as micro- or nano-sized particles.
    Type: Grant
    Filed: October 18, 2012
    Date of Patent: September 1, 2015
    Assignee: Indium Corporation
    Inventors: Sihai Chen, Ning-Cheng Lee
  • Publication number: 20130112109
    Abstract: A high emissive paint comprises organic materials with different functional groups, one or more inorganic materials, and optionally other paint property adjusting agents. The infrared absorption range of the paint derives from organic functional groups, such as C—C, C—H, N—H, C—N, C—O and C—X groups, and the one or more inorganic materials. One or more inorganic materials may also be present as micro- or nano-sized particles.
    Type: Application
    Filed: October 18, 2012
    Publication date: May 9, 2013
    Inventors: Sihai Chen, Ning-Cheng Lee
  • Publication number: 20110315429
    Abstract: A process of making efficient metal bump bonding with relative low temperature, preferably lower than the melting point of Indium, is described. To obtaining a lower processing temperature (preferred embodiments have a melting point of <100° C.), a metal or alloy layer is deposited on the indium bump surface. Preferably, the material is chosen such that the metal or alloy forms a passivation layer that is more resistant to oxidation than the underlying indium material. The passivation material is also preferably chosen to form a low melting temperature alloy with indium at the indium bump surface. This is typically accomplished by diffusion of the passivation material into the indium to form a diffusion layer alloy. Various metals, including Ga, Bi, Sn, Pb and Cd, that can be used to form a binary to quaternary low melting point alloy with indium.
    Type: Application
    Filed: June 24, 2011
    Publication date: December 29, 2011
    Inventors: Sihai Chen, Ning-Cheng Lee
  • Publication number: 20110265979
    Abstract: A composition for a highly reliable thermal interface materials includes: (A) moisture-resistant polymer with a water permeability coefficient preferably less than 10?11 cm3 (STP) cm/cm2 S Pa, (B) gas barrier polymer having oxygen permeability coefficient preferably less than 10?14 cm3 (STP) cm/cm2 S Pa, (C) antioxidant, (D) thermal conductive filler and (E) other additive or optional materials. The thermal interface materials placed in between the thermal generating and dissipating devices can effectively barrier water and oxygen penetration, preventing the thermal fillers from degradation and improving the reliability of the devices.
    Type: Application
    Filed: April 29, 2011
    Publication date: November 3, 2011
    Inventors: SIHAI CHEN, NING-CHENG LEE