Patents by Inventor Si-Hoon Hong

Si-Hoon Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130294158
    Abstract: A multi-level cell (MLC) memory device may include ‘a’ number of m-bit MLC memory cells; an encoder that encodes ‘k’ bits of data at a code rate of k/n to generate an encoded bit stream; and a signal mapping module that applies pulses to the MLC memory cells in order to write the encoded bit stream in the MLC memory cells. In the device, ‘a’ and ‘m’ may be integers greater than or equal to 2, ‘k’ and ‘n’ may be integers greater than or equal to 1, and ‘n’ may be greater than ‘k’. A method of storing data in the device may include encoding ‘k’ bits of data at a code rate of k/n to generate an encoded bit stream. A method of reading data from the device may include decoding ‘n’ bits of data at a code rate of n/k to generate a decoded bit stream.
    Type: Application
    Filed: July 8, 2013
    Publication date: November 7, 2013
    Inventors: Jun Jin KONG, Sung Chung PARK, Dong-Ku KANG, Young Hwan LEE, Si Hoon HONG, Jae Woong HYUN
  • Patent number: 8539143
    Abstract: A memory system is provided includes a host processor, and a plurality of cascade connected memory cards connected to the host processor. Each of the memory cards stores a same default relative card address (RCA) prior to initialization of the memory system. The host processor is configured to sequentially access each memory card using the default RCA, and to change the default RCA to a unique RCA upon each sequential access.
    Type: Grant
    Filed: March 16, 2012
    Date of Patent: September 17, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin-Hyeok Choi, Sung-Hoon Lee, Si-Hoon Hong, Tae-Keun Jeon
  • Patent number: 8499215
    Abstract: A multi-level cell (MLC) memory device may include ‘a’ number of m-bit MLC memory cells; an encoder that encodes ‘k’ bits of data at a code rate of k/n to generate an encoded bit stream; and a signal mapping module that applies pulses to the MLC memory cells in order to write the encoded bit stream in the MLC memory cells. In the device, ‘a’ and ‘m’ may be integers greater than or equal to 2, ‘k’ and ‘n’ may be integers greater than or equal to 1, and ‘n’ may be greater than ‘k’. A method of storing data in the device may include encoding ‘k’ bits of data at a code rate of k/n to generate an encoded bit stream. A method of reading data from the device may include decoding ‘n’ bits of data at a code rate of n/k to generate a decoded bit stream.
    Type: Grant
    Filed: May 24, 2007
    Date of Patent: July 30, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jun Jin Kong, Sung Chung Park, Dong Ku Kang, Young Hwan Lee, Si Hoon Hong, Jae Woong Hyun
  • Publication number: 20120179871
    Abstract: A memory system is provided includes a host processor, and a plurality of cascade connected memory cards connected to the host processor. Each of the memory cards stores a same default relative card address (RCA) prior to initialization of the memory system. The host processor is configured to sequentially access each memory card using the default RCA, and to change the default RCA to a unique RCA upon each sequential access.
    Type: Application
    Filed: March 16, 2012
    Publication date: July 12, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin-Hyeok CHOI, Sung-Hoon LEE, Si-Hoon HONG, Tae-Keun JEON
  • Patent number: 8166230
    Abstract: A memory system is provided includes a host processor, and a plurality of cascade connected memory cards connected to the host processor. Each of the memory cards stores a same default relative card address (RCA) prior to initialization of the memory system. The host processor is configured to sequentially access each memory card using the default RCA, and to change the default RCA to a unique RCA upon each sequential access.
    Type: Grant
    Filed: January 14, 2009
    Date of Patent: April 24, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin-Hyeok Choi, Sung-Hoon Lee, Si-Hoon Hong, Tae-Keun Jeon
  • Patent number: 8140935
    Abstract: An ECC (error correction code) controller of a flash memory device which stores an M-bit data (M being a positive integer equal to or greater than 2) comprises a first ECC block which generates a first ECC data from a program data to be stored in the flash memory device according to a first error correcting method and a second ECC block which generates a second ECC data from the first ECC data and the program data output from the first ECC block according to a second error correcting method, the program data, the first ECC data, and the second ECC data being stored in the flash memory device.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: March 20, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Si-Hoon Hong, Yun-Tae Lee, Jun-Jin Kong
  • Patent number: 8112689
    Abstract: An ECC (error correction code) controller of a flash memory device which stores an M-bit data (M being a positive integer equal to or greater than 2) comprises a first ECC block which generates a first ECC data from a program data to be stored in the flash memory device according to a first error correcting method and a second ECC block which generates a second ECC data from the first ECC data and the program data output from the first ECC block according to a second error correcting method, the program data, the first ECC data, and the second ECC data being stored in the flash memory device.
    Type: Grant
    Filed: April 19, 2007
    Date of Patent: February 7, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Si-Hoon Hong, Yun-Tae Lee, Jun-Jin Kong
  • Publication number: 20120011416
    Abstract: An ECC (error correction code) controller of a flash memory device which stores an M-bit data (M being a positive integer equal to or greater than 2) comprises a first ECC block which generates a first ECC data from a program data to be stored in the flash memory device according to a first error correcting method and a second ECC block which generates a second ECC data from the first ECC data and the program data output from the first ECC block according to a second error correcting method, the program data, the first ECC data, and the second ECC data being stored in the flash memory device.
    Type: Application
    Filed: September 23, 2011
    Publication date: January 12, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Si-Hoon HONG, Yun-Tae LEE, Jun-Jin KONG
  • Patent number: 8020081
    Abstract: A multi-level cell (MLC) memory device may include: a MLC memory cell; an outer encoder that encodes data using a first encoding scheme to generate an outer encoded bit stream; and a trellis coded modulation (TCM) modulator that applies a program pulse to the MLC memory cell to write the data in the MLC memory cell. The program pulse may be generated by TCM modulating the outer encoded bit stream. A method of storing data in a MLC memory device, reading data from the MLC memory device, or storing data in and reading data from the MLC memory device may include: encoding data using a first encoding scheme to generate an outer encoded bit stream; and applying a program pulse to a MLC memory cell of the MLC memory device to write the data in the MLC memory cell. The program pulse may be generated by TCM modulating the outer encoded bit stream.
    Type: Grant
    Filed: May 22, 2007
    Date of Patent: September 13, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jun Jin Kong, Sung Chung Park, Yun Tae Lee, Young Hwan Lee, Si Hoon Hong, Jae Woong Hyun, Dong Ku Kang
  • Patent number: 7873778
    Abstract: A method of operating a non-volatile memory can include backing-up first data successfully programmed to a first target page of a non-volatile memory to provide local back-up data. A determination can be made that programming of second data to the first target page has failed and the local back-up data can be programmed to a second target page in a second block of the non-volatile memory.
    Type: Grant
    Filed: October 19, 2007
    Date of Patent: January 18, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-Up Choi, Sung-Kook Bang, Si-Hoon Hong
  • Publication number: 20100011164
    Abstract: A memory system is provided includes a host processor, and a plurality of cascade connected memory cards connected to the host processor. Each of the memory cards stores a same default relative card address (RCA) prior to initialization of the memory system. The host processor is configured to sequentially access each memory card using the default RCA, and to change the default RCA to a unique RCA upon each sequential access.
    Type: Application
    Filed: January 14, 2009
    Publication date: January 14, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin-Hyeok CHOI, Sung-Hoon LEE, Si-Hoon HONG, Tae-Keun JEON
  • Patent number: 7516269
    Abstract: A USB flash memory device connected to a USB bus includes a flash memory module including at least one flash memory, a USB connector for transferring data packets onto the USB bus and receiving the data packets from the USB bus, a USB controller for controlling the USB connector according to the data packets and for controlling storage of data in and retrieval of data from the flash memory module, a display controller for storing memory storage capacity information of the flash memory module in a usage display register, a display window for displaying a value that is based on the content of the usage display register, and a power unit for supplying a power to the USB flash memory device. The USB connector is configured to be coupled to the USB bus. The USB flash memory device further includes a folding portion which is proximal to the USB connector and enables the USB flash memory device to be folded.
    Type: Grant
    Filed: August 28, 2006
    Date of Patent: April 7, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Si-Hoon Hong
  • Publication number: 20080175065
    Abstract: A method of operating a non-volatile memory can include backing-up first data successfully programmed to a first target page of a non-volatile memory to provide local back-up data. A determination can be made that programming of second data to the first target page has failed and the local back-up data can be programmed to a second target page in a second block of the non-volatile memory.
    Type: Application
    Filed: October 19, 2007
    Publication date: July 24, 2008
    Inventors: Sung-Up Choi, Sung-Kook Bang, Si-Hoon Hong
  • Publication number: 20080163023
    Abstract: An ECC (error correction code) controller of a flash memory device which stores an M-bit data (M being a positive integer equal to or greater than 2) comprises a first ECC block which generates a first ECC data from a program data to be stored in the flash memory device according to a first error correcting method and a second ECC block which generates a second ECC data from the first ECC data and the program data output from the first ECC block according to a second error correcting method, the program data, the first ECC data, and the second ECC data being stored in the flash memory device.
    Type: Application
    Filed: April 19, 2007
    Publication date: July 3, 2008
    Inventors: Si-Hoon Hong, Yun-Tae Lee, Jun-Jin Kong
  • Publication number: 20080151621
    Abstract: A multi-level cell (MLC) memory device may include ‘a’ number of m-bit MLC memory cells; an encoder that encodes ‘k’ bits of data at a code rate of k/n to generate an encoded bit stream; and a signal mapping module that applies pulses to the MLC memory cells in order to write the encoded bit stream in the MLC memory cells. In the device, ‘a’ and ‘m’ may be integers greater than or equal to 2, ‘k’ and ‘n’ may be integers greater than or equal to 1, and ‘n’ may be greater than ‘k’. A method of storing data in the device may include encoding ‘k’ bits of data at a code rate of k/n to generate an encoded bit stream. A method of reading data from the device may include decoding ‘n’ bits of data at a code rate of n/k to generate a decoded bit stream.
    Type: Application
    Filed: May 24, 2007
    Publication date: June 26, 2008
    Inventors: Jun Jin Kong, Sung Chung Park, Dong Ku Kang, Young Hwan Lee, Si Hoon Hong, Jae Woong Hyun
  • Publication number: 20080137413
    Abstract: A multi-level cell (MLC) memory device may include: a MLC memory cell; an outer encoder that encodes data using a first encoding scheme to generate an outer encoded bit stream; and a TCM modulator that applies a program pulse to the MLC memory cell to write the data in the MLC memory cell. The program pulse may be generated by TCM modulating the outer encoded bit stream. A method of storing data in a MLC memory device, reading data from the MLC memory device, or storing data in and reading data from the MLC memory device may include: encoding data using a first encoding scheme to generate an outer encoded bit stream; and applying a program pulse to a MLC memory cell of the MLC memory device to write the data in the MLC memory cell. The program pulse may be generated by TCM modulating the outer encoded bit stream.
    Type: Application
    Filed: May 22, 2007
    Publication date: June 12, 2008
    Inventors: Jun Jin Kong, Sung Chung Park, Yun Tae Lee, Young Hwan Lee, Si Hoon Hong, Jae Woong Hyun, Dong Ku Kang
  • Publication number: 20080016276
    Abstract: A USB flash memory device connected to a USB bus includes a flash memory module including at least one flash memory, a USB connector for transferring data packets onto the USB bus and receiving the data packets from the USB bus, a USB controller for controlling the USB connector according to the data packets and for controlling storage of data in and retrieval of data from the flash memory module, a display controller for storing memory storage capacity information of the flash memory module in a usage display register, a display window for displaying a value that is based on the content of the usage display register, and a power unit for supplying a power to the USB flash memory device. The USB connector is configured to be coupled to the USB bus. The USB flash memory device further includes a folding portion which is proximal to the USB connector and enables the USB flash memory device to be folded.
    Type: Application
    Filed: July 11, 2007
    Publication date: January 17, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Si-Hoon Hong
  • Publication number: 20060294306
    Abstract: A USB flash memory device connected to a USB bus includes a flash memory module including at least one flash memory, a USB connector for transferring data packets onto the USB bus and receiving the data packets from the USB bus, a USB controller for controlling the USB connector according to the data packets and for controlling storage of data in and retrieval of data from the flash memory module, a display controller for storing memory storage capacity information of the flash memory module in a usage display register, a display window for displaying a value that is based on the content of the usage display register, and a power unit for supplying a power to the USB flash memory device. The USB connector is configured to be coupled to the USB bus. The USB flash memory device further includes a folding portion which is proximal to the USB connector and enables the USB flash memory device to be folded.
    Type: Application
    Filed: August 28, 2006
    Publication date: December 28, 2006
    Inventor: Si-Hoon Hong
  • Patent number: 7124238
    Abstract: A USB flash memory device connected to a USB bus includes a flash memory module including at least one flash memory, a USB connector for transferring data packets onto the USB bus and receiving the data packets from the USB bus, a USB controller for controlling the USB connector according to the data packets and for controlling storage of data in and retrieval of data from the flash memory module, a display controller for storing memory storage capacity information of the flash memory module in a usage display register, a display window for displaying a value that is based on the content of the usage display register, and a power unit for supplying a power to the USB flash memory device. The USB connector is configured to be coupled to the USB bus. The USB flash memory device further includes a folding portion which is proximal to the USB connector and enables the USB flash memory device to be folded.
    Type: Grant
    Filed: December 16, 2003
    Date of Patent: October 17, 2006
    Assignee: Samsung Electronics, Co., Ltd.
    Inventor: Si-Hoon Hong
  • Patent number: 7103496
    Abstract: A disc interface, a disc interface system having the same, and a disc interfacing method may be provided. The disc interface may receive a reduced quantity of test command information at a lower speed which may correspond to an operation speed of a general test apparatus to automatically generate a real-time testbench signal. The digital unit of the disc interface may be operated at an actual operation speed though the test command information and debugging data may be input and output at a lower speed. Thus, digital circuits operating at a high speed may be tested using an less expensive test apparatus.
    Type: Grant
    Filed: August 5, 2004
    Date of Patent: September 5, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Si-Hoon Hong