Patents by Inventor Si Hyuk Lee
Si Hyuk Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10038127Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: GrantFiled: April 21, 2017Date of Patent: July 31, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong-in Yang, Tae-hyung Kim, Si-hyuk Lee, Sang-yeob Song, Cheol-soo Sone, Hak-hwan Kim, Jin-hyun Lee
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Publication number: 20170229626Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: ApplicationFiled: April 21, 2017Publication date: August 10, 2017Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong-in YANG, Tae-hyung KIM, Si-hyuk LEE, Sang-yeob SONG, Cheol-soo SONE, Hak-hwan KIM, Jin-hyun LEE
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Patent number: 9660163Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: GrantFiled: June 10, 2015Date of Patent: May 23, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong-in Yang, Tae-hyung Kim, Si-hyuk Lee, Sang-yeob Song, Cheol-soo Sone, Hak-hwan Kim, Jin-hyun Lee
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Patent number: 9293675Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: GrantFiled: January 9, 2015Date of Patent: March 22, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-In Yang, Tae-Hyung Kim, Si-Hyuk Lee, Sang-Yeob Song, Cheol-Soo Sone, Hak-Hwan Kim, Jin-Hyun Lee
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Publication number: 20150364652Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: ApplicationFiled: June 10, 2015Publication date: December 17, 2015Inventors: Jong-in YANG, Tae-hyung KIM, Si-hyuk LEE, Sang-yeob SONG, Cheol-soo SONE, Hak-hwan KIM, Jin-hyun LEE
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Patent number: 9099631Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: GrantFiled: January 9, 2015Date of Patent: August 4, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong-In Yang, Tae-Hyung Kim, Si-Hyuk Lee, Sang-Yeob Song, Cheol-Soo Sone, Hak-Hwan Kim, Jin-Hyun Lee
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Patent number: 9099624Abstract: A semiconductor light emitting device and package containing the same include: a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A light extraction layer is disposed on the light emitting structure and includes a light-transmissive thin film layer having light transmittance, a nano-rod layer including nano-rods disposed on the light-transmissive thin film layer, and a nano-wire layer including nano-wires disposed on the nano-rod layer.Type: GrantFiled: November 14, 2012Date of Patent: August 4, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Wan Ho Lee, Gi Bum Kim, Si Hyuk Lee
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Publication number: 20150125983Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: ApplicationFiled: January 9, 2015Publication date: May 7, 2015Inventors: Jong-In YANG, Tae-Hyung KIM, Si-Hyuk LEE, Sang-Yeob SONG, Cheol-Soo SONE, Hak-Hwan KIM, Jin-Hyun LEE
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Publication number: 20150115281Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: ApplicationFiled: January 9, 2015Publication date: April 30, 2015Inventors: Jong-In YANG, Tae-Hyung KIM, Si-Hyuk LEE, Sang-Yeob SONG, Cheol-Soo SONE, Hak-Hwan KIM, Jin-Hyun LEE
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Patent number: 8975655Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: GrantFiled: September 10, 2014Date of Patent: March 10, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-In Yang, Tae-Hyung Kim, Si-Hyuk Lee, Sang-Yeob Song, Cheol-Soo Sone, Hak-Hwan Kim, Jin-Hyun Lee
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Publication number: 20140374772Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: ApplicationFiled: September 10, 2014Publication date: December 25, 2014Inventors: Jong-In YANG, Tae-Hyung KIM, Si-Hyuk LEE, Sang-Yeob SONG, Cheol-Soo SONE, Hak-Hwan KIM, Jin-Hyun LEE
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Patent number: 8877562Abstract: An LED includes a compound semiconductor structure having first and second compound layers and an active layer, first and second electrode layers atop the second compound semiconductor layer and connected to respective compound layers. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer formed on another side surface is connected to the second electrode layer. By forming connection layers on respective side surfaces of the light-emitting device, manufacturing costs can be reduced.Type: GrantFiled: April 15, 2014Date of Patent: November 4, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Tae-Hyung Kim, Cheol-soo Sone, Jong-in Yang, Sang-yeob Song, Si-hyuk Lee
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Patent number: 8872205Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: GrantFiled: July 8, 2011Date of Patent: October 28, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-in Yang, Tae-hyung Kim, Si-hyuk Lee, Sang-yeob Song, Cheol-soo Sone, Hak-hwan Kim, Jin-hyun Lee
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Publication number: 20140227814Abstract: An LED includes a compound semiconductor structure having first and second compound layers and an active layer, first and second electrode layers atop the second compound semiconductor layer and connected to respective compound layers. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer formed on another side surface is connected to the second electrode layer. By forming connection layers on respective side surfaces of the light-emitting device, manufacturing costs can be reduced.Type: ApplicationFiled: April 15, 2014Publication date: August 14, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tae-Hyung KIM, Cheol-soo SONE, Jong-in YANG, Sang-yeob SONG, Si-hyuk LEE
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Patent number: 8753910Abstract: A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.Type: GrantFiled: October 12, 2012Date of Patent: June 17, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Myong Soo Cho, Ki Yeol Park, Sang Yeob Song, Si Hyuk Lee, Pun Jae Choi
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Patent number: 8735932Abstract: An LED includes a compound semiconductor structure having first and second compound layers and an active layer, first and second electrode layers atop the second compound semiconductor layer and connected to respective compound layers. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer formed on another side surface is connected to the second electrode layer. By forming connection layers on respective side surfaces of the light-emitting device, manufacturing costs can be reduced.Type: GrantFiled: October 5, 2011Date of Patent: May 27, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Tae-hyung Kim, Cheol-soo Sone, Jong-in Yang, Sang-yeob Song, Si-hyuk Lee
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Patent number: 8476639Abstract: There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.Type: GrantFiled: December 12, 2011Date of Patent: July 2, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Jong In Yang, Sang Bum Lee, Sang Yeob Song, Si Hyuk Lee, Tae Hyung Kim
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Publication number: 20130029445Abstract: There is provided a method of manufacturing a semiconductor light emitting device, the method including: preparing a substrate including first and second main surfaces opposing each other; forming a plurality of protruding parts in the first main surface of the substrate; forming a light emitting stack on the first main surface on which the plurality of protruding parts are formed; forming a plurality of light emitting structures by removing portions of the light emitting stack formed in regions corresponding to groove parts around the plurality of protruding parts; and separating the substrate along the groove parts.Type: ApplicationFiled: July 25, 2012Publication date: January 31, 2013Inventors: Gi Bum KIM, Won Goo HUR, Seung Woo CHOI, Seung Jae LEE, Si Hyuk LEE, Tae Hun KIM
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Patent number: 8309970Abstract: A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.Type: GrantFiled: April 26, 2010Date of Patent: November 13, 2012Assignee: Samsung Led Co., Ltd.Inventors: Myong Soo Cho, Ki Yeol Park, Sang Yeob Song, Si Hyuk Lee, Pun Jae Choi
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Publication number: 20120119249Abstract: An LED and manufacturing method therefor. The LED comprises a compound semiconductor structure having first and second compound layers and active layer, first and second electrode layers atop the second compound semiconductor layer and connected to the two compound. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer on the other side surface is connected to the second electrode layer.Type: ApplicationFiled: October 5, 2011Publication date: May 17, 2012Inventors: Tae-hyung KIM, Cheol-soo SONE, Jong-in YANG, Sang-yeob SONG, Si-hyuk LEE