Abstract: The present invention discloses a method for manufacturing single crystal nano-structures capable of controlling morphology so as to allow materials with various morphologies to form nano-structures in desired morphologies and a device for manufacturing the nano-structures, according to variables such as a temperature of a target member in a vacuum system, an applied voltage applied to the target member, a pulse width, a kind of precursors after vaporization of the target member, etc. Each of the nano-structures of the present invention can be used as a unit of a storage medium so that a high density storage medium can be manufactured and various devices can be miniaturized by using particular electrical and physical characteristics that are exhibited in a nano-size semiconductor or metal.

Abstract: A method of forming a ferroelectric thin film for suppressing the formation of a-domain and providing a sufficient layer coverage may be provided. The method includes immersing a substrate having the miscut surface into a reaction solution including a precursor compound for perovskite-type ferroelectric and water, and implementing a hydrothermal reaction in the reaction solution at a temperature lower than the phase transition temperature of the perovskite-type ferroelectric, thereby forming a perovskite-type ferroelectric thin film on the miscut surface of the substrate.

Abstract: Disclosed is a method for preparing heteroepitaxial thin films which are free of island structures which have a bad influence on the photoelectric properties and interfacial reactivity of the thin films. These heteroepitaxial thin films are deposited on grooved or curved surfaces of substrates. The use of grooved substrates relieves the coherent elastic strain from the thin films, thereby inhibiting the surface roughening and the island structure formation in the heteroepitaxial thin films. The method can be applied to all of the thin films that show island structures, including GaAs/Si and SiGe/Si typically used in semiconductor devices and various electronic parts, enabling the thin films to be flatly deposited at a significant thickness on various substrates without additionally processing.

Abstract: Disclosed is a method for testing the photoinduced domain switching of ferroelectric ceramics using AE. A ferroelectric ceramic specimen 4 was tested for the AE signal and photovoltaic current upon application of light. Light emanating from a xenon lamp 1 is focused into a specimen 4 through a waveguide 2 and a lens 3. Raw AE signals are detected through an AE sensor 5. The output signals from the AE sensor 5 are forwarded to a bandpass filter 7 which filtered the signals. Then, the AE signals are amplified by 40 dB by a pre-amplifier 8 and further by 30 dB by an AET 5500 system 10 which is connected to a computer 9 for analyzing the signals. The AE events which show a peak amplitude greater than or as great as a predetermined threshold voltage are counted with respect to an irradiation period of time, followed by calculating an occurrence rate of the AE event counts. From these data, the activity of the photoinduced domain switching can be qualitatively evaluated.