Abstract: A semiconductor memory device is provided. The semiconductor memory device includes a first bit line extending in a first direction on a substrate, a word line on the first bit line, and extending in a second direction intersecting the first direction, a first channel pattern between the first bit line and the word line, and extending along a first side wall of the word line and a first contact pattern on the first channel pattern, wherein in a cross-sectional view taken along the first channel pattern in the second direction, the first contact pattern includes a connecting part on the first channel pattern, and a protruding part which is connected to the connecting part, and extends along a side wall of the first channel pattern.

Abstract: A method of fabricating a semiconductor device may include forming an active pattern on a substrate, sequentially forming on the substrate a base mask, a first mask layer, a first capping layer, a second mask layer, a second capping layer, a third mask layer, a third capping layer, a fourth mask layer, and a fourth capping layer, forming first spacers, forming second spacers, forming third spacers, and using the third spacers as a mask to pattern the first mask layer and the first capping layer. Forming the third spacers may include forming a spacer layer to completely fill a space between the sidewalls of patterns of the patterned second mask layer.

Abstract: A magnetic device includes a pinned layer having an in-plane magnetization direction; a free layer, having an in-plane magnetization direction, vertically spaced apart from the pinned layer to be aligned with the pinned layer; a conductive spacer layer disposed between the pinned layer and the free layer; an antiferromagnetic layer disposed to fin the magnetization direction of the pinned layer and vertically spaced apart from the pinned layer to be aligned with the pinned layer; and a noble metal spacer layer disposed between the pinned layer and the antiferromagnetic layer.

Abstract: A magnetic device includes a pinned layer having an in-plane magnetization direction; a free layer, having an in-plane magnetization direction, vertically spaced apart from the pinned layer to be aligned with the pinned layer; a conductive spacer layer disposed between the pinned layer and the free layer; an antiferromagnetic layer disposed to fin the magnetization direction of the pinned layer and vertically spaced apart from the pinned layer to be aligned with the pinned layer; and a noble metal spacer layer disposed between the pinned layer and the antiferromagnetic layer.