Abstract: Methods and systems for detecting systemwide service issues by using anomaly localization. In an example, a method includes receiving time-series monitoring data for multiple services, the time-series monitoring data including multiple dimensions and an error metric; for the monitoring data from each service, evaluating scopes within the monitoring data based on an objective function for a time-series of the error metric to identify at least one anomalous scope, each scope including at least one dimension and a value for the dimension; based on evaluating the scopes, generating a ranked list of scopes for each service based on objective function scores for the scopes; correlating the ranked lists of scopes across the multiple services to identify a cross-service anomaly; and generating an alert for the services based on the cross-service anomaly, the alert indicating at least one scope as a potential root cause for the cross-service anomaly.

Abstract: The present disclosure relates to systems, methods, and computer readable media for predicting surplus capacity on a set of server nodes and determining a quantity of deferrable virtual machines (VMs) that may be scheduled over an upcoming period of time. This determination of VM quantity may be determined while minimizing risks associated with allocation failures on the set of server nodes. This disclosure described systems that facilitate features and functionality related to improving utilization of surplus resource capacity on a plurality of server nodes by implementing VMs having some flexibility in timing of deployment while also avoiding significant risk caused as a result of over-allocated storage and computing resources. In one or more embodiments, the quantity of deferrable VMs is determined and scheduled in accordance with rules of a scheduling policy.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes the following. A substrate is provided. A stacked structure is formed on the substrate. The stacked structure includes first material layers and gate layers that are alternatively stacked. The stacked structure includes a giant block (GB) region and a stair-step region. A third material layer is formed on an upper surface of the GB region and an upper surface of the stair-step region. A fourth material layer filling the stair-step region and covering the GB region is formed. At least one contact structure is located in the stair-step region. Each of the at least one contact structure penetrates the third material layer and is connected with a respective one of the gate layers.