Abstract: A light emitting element may include a first semiconductor layer, an emission layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the emission layer, an insulating film, and an electrode layer. The insulating film may enclose a side surface of the first semiconductor layer, a side surface of the emission layer, and a side surface of the second semiconductor layer. The electrode layer may be disposed on the second semiconductor layer and the insulating film. The insulating film may not enclose the electrode layer.

Abstract: A semiconductor memory device includes a cell substrate, a plurality of gate electrodes sequentially stacked on the cell substrate and extending in a first direction, first and second channel structures extending in a second direction different from the first direction and penetrating the plurality of gate electrodes, and a bit line disposed on the plurality of gate electrodes. The first and second channel structures each include a ferroelectric layer, a channel layer, a gate insulating layer and a back gate electrode, which are sequentially disposed on side walls of the plurality of gate electrodes. The first channel structure and the second channel structure are adjacent to each other in the first direction and share a bit line.

Abstract: The present invention relates to phthalocyanine compound of poly cross-linking type which is represented with the below formula 1 and is useful for preventing forgery and alternation due to a rapid velocity being responded to a gamma ray of Neutron, and an ink composition comprising it. wherein, M1 and M2 are any one selected from a group consisted of a metal, a metal oxide or a metal halide respectively and may be same or different, R is a hydrogen atom, a halogen atom, a hydroxyl group, an amino group, a hydroxysulfonyl group, an aminosulfonyl group, or an alky group having a substituent group having from 1 to 20 carbon atoms, and n is an integer of 0˜3.