Patents by Inventor Si Trong NGO

Si Trong NGO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for estimating twin defect density
    Patent number: 11733177
    Abstract: Disclosed is a method for estimating twin defect density in a single-crystal sample, including: (A) etching the observed surface of a single crystal to form etch pits; (B) selecting bar-shaped etch pits caused by twin defect; (C) from the long-axis direction lengths of the etch pits caused by twin defect, estimating the twin defect density by using the following equation: twin defect density=?kx?i/area of sample, wherein 2?k?3, and x?i is the long-axis direction length of an etch pit caused by the i-th twin.
    Type: Grant
    Filed: March 11, 2020
    Date of Patent: August 22, 2023
    Assignee: The Industry & Academic Cooperation in Chungnam National University (IAC)
    Inventors: Soon-ku Hong, Si Trong Ngo, Duy Duc Le, Jungkuk Lee
  • METHOD FOR EVALUATING DEFECT IN MONOCLINIC GALLIUM OXIDE
    Publication number: 20220050062
    Abstract: Disclosed is a qualitative evaluation method of a volumetric defect density due to other grains having different crystal orientations from a single crystal matrix in a (001) monoclinic gallium oxide sample or a (010) monoclinic gallium oxide sample. The method includes the steps of: forming an etch pit by etching an observation plane of a single crystal; and selecting a quadrilateral etch pit formed by volumetric defects except for void defects.
    Type: Application
    Filed: July 15, 2021
    Publication date: February 17, 2022
    Applicant: The Industry & Academic Cooperation in Chungnam National University (IAC)
    Inventors: Soon-Ku HONG, Si Trong NGO, Quoc Vuong NGUYEN
  • METHOD FOR ESTIMATING TWIN DEFECT DENSITY
    Publication number: 20210270753
    Abstract: Disclosed is a method for estimating twin defect density in a single-crystal sample, including: (A) etching the observed surface of a single crystal to form etch pits; (B) selecting bar-shaped etch pits caused by twin defect; (C) from the long-axis direction lengths of the etch pits caused by twin defect, estimating the twin defect density by using the following equation: twin defect density=?kx?i/area of sample, wherein 2?k?3, and x?i is the long-axis direction length of an etch pit caused by the i-th twin.
    Type: Application
    Filed: March 11, 2020
    Publication date: September 2, 2021
    Applicant: The Industry & Academic Cooperation in Chungnam National University (IAC)
    Inventors: Soon-ku HONG, Si Trong NGO, Duy Duc LE, Jungkuk LEE