Abstract: A method for forming semiconductor devices includes providing a substrate with a conductive pad formed thereon; forming a transparent structure over the substrate, wherein the transparent structure includes a plurality of collimating pillars adjacent to the conductive pad; forming a light-shielding structure over the plurality of collimating pillars and the conductive pad; performing a cutting process to remove one or more materials directly above the conductive pad, while leaving remaining material to cover the conductive pad, wherein the material includes a portion of the light-shielding structure; and performing an etching process to remove the remaining material to expose the conductive pad.

Abstract: An optical sensor includes pixels disposed in a substrate. A light collimating layer is disposed on the substrate and includes a transparent layer, a light-shielding layer, and transparent pillars. The transparent layer blanketly disposed on the substrate covers the pixels and the region between the pixels. The light-shielding layer is disposed on the transparent layer and between the transparent pillars. The transparent pillars penetrating through the light-shielding layer are correspondingly disposed on the pixels.

Abstract: A method for forming semiconductor devices includes providing a substrate with a conductive pad formed thereon; forming a transparent structure over the substrate, wherein the transparent structure includes a plurality of collimating pillars adjacent to the conductive pad; forming a light-shielding structure over the plurality of collimating pillars and the conductive pad; performing a cutting process to remove one or more materials directly above the conductive pad, while leaving remaining material to cover the conductive pad, wherein the material includes a portion of the light-shielding structure; and performing an etching process to remove the remaining material to expose the conductive pad.

Abstract: A method for forming semiconductor devices includes providing a substrate with a conductive pad formed thereon; forming a transparent structure over the substrate, wherein the transparent structure includes a plurality of collimating pillars adjacent to the conductive pad; forming a light-shielding structure over the plurality of collimating pillars and the conductive pad; performing a cutting process to remove one or more materials directly above the conductive pad, while leaving remaining material to cover the conductive pad, wherein the material includes a portion of the light-shielding structure; and performing an etching process to remove the remaining material to expose the conductive pad.

Abstract: A method for forming semiconductor devices includes providing a substrate with a conductive pad formed thereon; forming a transparent structure over the substrate, wherein the transparent structure includes a plurality of collimating pillars adjacent to the conductive pad; forming a light-shielding structure over the plurality of collimating pillars and the conductive pad; performing a cutting process to remove one or more materials directly above the conductive pad, while leaving remaining material to cover the conductive pad, wherein the material includes a portion of the light-shielding structure; and performing an etching process to remove the remaining material to expose the conductive pad.

Abstract: An optical sensor includes a plurality of pixels disposed in a substrate and a light collimating layer. The light collimating layer is disposed on the substrate. The light collimating layer includes a light-shielding layer, a plurality of transparent pillars, and a plurality of first dummy transparent pillars. The light-shielding layer is disposed on the substrate. The plurality of transparent pillars pass through the light-shielding layer and are disposed correspondingly on the plurality of pixels. The plurality of first dummy transparent pillars that pass through the light-shielding layer are disposed on a first peripheral region of the light collimating layer, wherein the plurality of first dummy transparent pillars surround the plurality of transparent pillars from a top view.

Abstract: An optical sensor includes pixels disposed in a substrate and a light collimating layer disposed on the substrate. The light collimating layer includes a first light-shielding layer, first transparent pillars, a second light-shielding layer, and second transparent pillars. The first light-shielding layer is disposed on the substrate. The first transparent pillars through the first light-shielding layer are correspondingly disposed on the pixels. The second light-shielding layer is disposed on the first light-shielding layer and the first transparent pillars. The second transparent pillars through the second light-shielding layer are correspondingly disposed on the first transparent pillars. The top surface area of each of the first transparent pillars is not equal to the bottom surface area of each of the second transparent pillars.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate. The substrate includes a plurality of pixels. The semiconductor device also includes a light collimator layer disposed on the substrate. The light collimator layer includes a transparent connection feature disposed on the substrate, and a plurality of transparent pillars disposed on the transparent connection feature. The plurality of transparent pillars cover the plurality of pixels, and the transparent connection feature connects to the plurality of transparent pillars. The plurality of transparent pillars and the transparent connection feature are made of a first material which includes a transparent material. The light collimator layer also includes a plurality of first light-shielding features disposed on the transparent connection feature. The top surface of one of the transparent pillars is level with the top surface of one of the first light-shielding features.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate. The substrate includes a plurality of pixels. The semiconductor device also includes a light collimator layer disposed on the substrate. The light collimator layer includes a transparent connection feature disposed on the substrate, and a plurality of transparent pillars disposed on the transparent connection feature. The plurality of transparent pillars cover the plurality of pixels, and the transparent connection feature connects to the plurality of transparent pillars. The plurality of transparent pillars and the transparent connection feature are made of a first material which includes a transparent material. The light collimator layer also includes a plurality of first light-shielding features disposed on the transparent connection feature. The top surface of one of the transparent pillars is level with the top surface of one of the first light-shielding features.

Abstract: An optical sensor includes pixels disposed in a substrate and a light collimating layer disposed on the substrate. The light collimating layer includes a first light-shielding layer, first transparent pillars, a second light-shielding layer, and second transparent pillars. The first light-shielding layer is disposed on the substrate. The first transparent pillars through the first light-shielding layer are correspondingly disposed on the pixels. The second light-shielding layer is disposed on the first light-shielding layer and the first transparent pillars. The second transparent pillars through the second light-shielding layer are correspondingly disposed on the first transparent pillars. The top surface area of each of the first transparent pillars is not equal to the bottom surface area of each of the second transparent pillars.

Abstract: An optical sensor includes a plurality of pixels disposed in a substrate and a light collimating layer. The light collimating layer is disposed on the substrate. The light collimating layer includes a light-shielding layer, a plurality of transparent pillars, and a plurality of first dummy transparent pillars. The light-shielding layer is disposed on the substrate. The plurality of transparent pillars pass through the light-shielding layer and are disposed correspondingly on the plurality of pixels. The plurality of first dummy transparent pillars that pass through the light-shielding layer are disposed on a first peripheral region of the light collimating layer, wherein the plurality of first dummy transparent pillars surround the plurality of transparent pillars from a top view.

Abstract: An optical sensor includes pixels disposed in a substrate. A light collimating layer is disposed on the substrate and includes a transparent layer, a light-shielding layer, and transparent pillars. The transparent layer blanketly disposed on the substrate covers the pixels and the region between the pixels. The light-shielding layer is disposed on the transparent layer and between the transparent pillars. The transparent pillars penetrating through the light-shielding layer are correspondingly disposed on the pixels.