Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.

Abstract: A magnetoresistive random access memory (MRAM) structure, including a substrate and multiple MRAM cells on the substrate, wherein the MRAM cells are arranged in a memory region adjacent to a logic region. An ultra low-k (ULK) layer covers the MRAM cells, wherein the surface portion of ultra low-k layer is doped with fluorine, and dents are formed on the surface of ultra low-k layer at the boundaries between the memory region and the logic region.

Abstract: A pneumatic apparatus and method for driving a microflow is disclosed. The microflow driving apparatus of this invention comprises an external pneumatic driving device that generates an array of airflows; an air gallery to accept airflows of said pneumatic driving device and to generate a suction force and an exclusion force; and a fluid channel connected with said air gallery to allow a fluid to flow inside it. In the air gallery, a trapezoid block is provided to generate an air circle from at least one of said airflows. An open gap is provided in the fluid channel at the connection of the air gallery and the fluid channel. When different combinations of airflows are introduced into the air gallery, a suction force or an exclusion force is generated to drive the reaction fluid inside the fluid channel to proceed, retreat or pause. A method using the apparatus for driving a microflow is also disclosed.