Abstract: A method of testing an impedance-sensitive system with a switching device, wherein the method comprises: switching the disconnecting device into the on-state configured to permit transmission of energy via the coil; implementing a first measurement with the impedance-sensitive system; switching the disconnecting device into the off-state configured to permit damping of the external positioning signal that couples into the coil so as to reduce the undesirable oscillations of the coil; implementing a second measurement with the impedance-sensitive system; performing a comparison of the first measurement and the second measurement; performing a verification of the comparison with a target specification; and displaying a correct function and/or a malfunction depending on the verification.

Abstract: A method of testing an impedance-sensitive system with a switching device, wherein the method comprises: switching the disconnecting device into the on-state configured to permit transmission of energy via the coil; implementing a first measurement with the impedance-sensitive system; switching the disconnecting device into the off-state configured to permit damping of the external positioning signal that couples into the coil so as to reduce the undesirable oscillations of the coil; implementing a second measurement with the impedance-sensitive system; performing a comparison of the first measurement and the second measurement; performing a verification of the comparison with a target specification; and displaying a correct function and/or a malfunction depending on the verification.

Abstract: A system associated with predicting segmentation quality of segmented objects implemented in the analysis of copious image data is disclosed. The system receives a collection of image data related to a particular type of data. The image data is segmented into segmented data portions based on an object associated with the collection of image data. Regions of interest associated with the segmented data portions are determined. The quality of segmentation of the segmented data portions is determined for respective classification of the regions of interest. A classification label is assigned to the regions of interest. Regions of interest are partitioned into sub-regions. Features associated with the sub-regions of the segmented data portions are determined. A training dataset is generated based on the determined features associated with the sub-regions in order to train a classification model based on a predetermined threshold value.

Abstract: Techniques directed to forming and using coupling mechanisms for substrates, semiconductor packages, and/or printed circuit boards are described. One technique includes forming a substrate (205) comprising: first and second interconnect pads (213A, 213B) in or on a build-up layer (203); and first and second interconnects (211A, 211B) on the first and second interconnect pads (213A, 213B). The first interconnect pad (213A) can be located at a lower position than the second interconnect pad (213B) with regard to a z-position. The techniques described herein can assist with minimizing or eliminating solder ball bridge defects (SBBDs) that may be creating during performance of coupling technique (e.g., a reflow process, etc.).

Abstract: Techniques directed to forming and using coupling mechanisms for substrates, semiconductor packages, and/or printed circuit boards are described. One technique includes forming a substrate (205) comprising: first and second interconnect pads (213A, 213B) in or on a build-up layer (203); and first and second interconnects (211A, 211B) on the first and second interconnect pads (213A, 213B). The first interconnect pad (213A) can be located at a lower position than the second interconnect pad (213B) with regard to a z-position. The techniques described herein can assist with minimizing or eliminating solder ball bridge defects (SBBDs) that may be creating during performance of coupling technique (e.g., a reflow process, etc.).

Abstract: Systems, apparatuses, processing (1400), and techniques related to applying a plurality of grooves in a portion of a surface of a first substrate (1402) and coupling a surface of a second substrate to the surface of the first substrate, wherein a selected design of the grooves is to facilitate a flow of a material to fill a volume between the first substrate surface and a second substrate surface (1404).

Abstract: A coating apparatus for forming a coating film over a substrate includes a spin chuck for holding and rotating the substrate, a central coating nozzle over a central portion of the substrate, a plurality of first coating nozzles surrounding the central coating nozzle and spaced apart from the central coating nozzle by substantially a same first distance, and a plurality of second coating nozzles surrounding the central coating nozzle and spaced apart from the central coating nozzle by substantially a same second distance, wherein the second distance is greater than the first distance.

Abstract: A plasma processing system and a method for controlling a plasma in semiconductor fabrication are provided. The system includes a remote plasma module configured to generate a plasma. The system further includes a compound mixing member configured to receive the plasma. The system also includes a processing chamber configured to receive the plasma from the compound mixing member for processing. In addition, the system includes a detection module configured to monitor the plasma in the compound mixing member.

Abstract: A thermal chemical vapor deposition (CVD) system includes a bottom chamber, an upper chamber, a workpiece support, a heater and at least one shielding plate. The upper chamber is present over the bottom chamber. The upper chamber and the bottom chamber define a chamber space therebetween. The workpiece support is configured to support a workpiece in the chamber space. The heater is configured to apply heat to the workpiece. The shielding plate is configured to at least partially shield the bottom chamber from the heat.

Abstract: A system associated with predicting segmentation quality of segmented objects implemented in the analysis of copious image data is disclosed. The system receives a collection of image data related to a particular type of data. The image data is segmented into segmented data portions based on an object associated with the collection of image data. Regions of interest associated with the segmented data portions are determined. The quality of segmentation of the segmented data portions is determined for respective classification of the regions of interest. A classification label is assigned to the regions of interest. Regions of interest are partitioned into sub-regions. Features associated with the sub-regions of the segmented data portions are determined. A training dataset is generated based on the determined features associated with the sub-regions in order to train a classification model based on a predetermined threshold value.

Abstract: A plasma processing system and a method for controlling a plasma in semiconductor fabrication are provided. The system includes a remote plasma module configured to generate a plasma. The system further includes a compound mixing member configured to receive the plasma. The system also includes a processing chamber configured to receive the plasma from the compound mixing member for processing. In addition, the system includes a detection module configured to monitor the plasma in the compound mixing member.

Abstract: A plasma processing system and a method for controlling a plasma in semiconductor fabrication are provided. The system includes a remote plasma module configured to generate a plasma. The system further includes a compound mixing member configured to receive the plasma. The system also includes a processing chamber configured to receive the plasma from the compound mixing member for processing. In addition, the system includes a detection module configured to monitor the plasma in the compound mixing member.

Abstract: A thermal chemical vapor deposition (CVD) system includes a bottom chamber, an upper chamber, a workpiece support, a heater and at least one shielding plate. The upper chamber is present over the bottom chamber. The upper chamber and the bottom chamber define a chamber space therebetween. The workpiece support is configured to support a workpiece in the chamber space. The heater is configured to apply heat to the workpiece. The shielding plate is configured to at least partially shield the bottom chamber from the heat.

Abstract: A thermal chemical vapor deposition (CVD) system includes a bottom chamber, an upper chamber, a workpiece support, a heater and at least one shielding plate. The upper chamber is present over the bottom chamber. The upper chamber and the bottom chamber define a chamber space therebetween. The workpiece support is configured to support a workpiece in the chamber space. The heater is configured to apply heat to the workpiece. The shielding plate is configured to at least partially shield the bottom chamber from the heat.

Abstract: A coating apparatus for forming a coating film over a substrate includes a spin chuck for holding and rotating the substrate, a central coating nozzle over a central portion of the substrate, a plurality of first coating nozzles surrounding the central coating nozzle and spaced apart from the central coating nozzle by substantially a same first distance, and a plurality of second coating nozzles surrounding the central coating nozzle and spaced apart from the central coating nozzle by substantially a same second distance, wherein the second distance is greater than the first distance.

Abstract: An apparatus comprises a first gas inlet coupled between a first pipe and a reaction chamber, wherein the first pipe configured to carry process gases, a second gas inlet coupled between a second pipe and the reaction chamber, wherein the second pipe configured to carry a precursor material in a gaseous state and a heating device coupled to the second pipe and the second gas inlet, wherein the heating device keeps an ambient temperature of the second pipe and the second gas inlet above a boiling point of the precursor material.

Abstract: A thermal chemical vapor deposition (CVD) system includes a bottom chamber, an upper chamber, a workpiece support, a heater and at least one shielding plate. The upper chamber is present over the bottom chamber. The upper chamber and the bottom chamber define a chamber space therebetween. The workpiece support is configured to support a workpiece in the chamber space. The heater is configured to apply heat to the workpiece. The shielding plate is configured to at least partially shield the bottom chamber from the heat.

Abstract: An apparatus includes a body and a surface for receiving a semiconductor wafer carrier is provided. A nozzle and a venting hole are provided on the surface. The semiconductor wafer carrier has at least one selectively closable capped opening at a bottom, top and/or side surface thereof. The capped opening is configured to couple to, and be accessible by, the nozzle and receive gas output from the nozzle so as to create a substantially oxygen free environment within the semiconductor wafer carrier. The vent hole is configured to allow gas to flow out of the semiconductor wafer carrier. In addition, the apparatus includes a sensor and a controller. The sensor is configured to monitor an ambient condition in the semiconductor wafer carrier, and the controller is configured to adjust a control valve based on the ambient condition so as to control the gas flow or output from the nozzle.

Abstract: A method of forming a coating film over a substrate is provided. The method includes spinning the substrate. The method further includes providing a central coating liquid spray over a central portion of the substrate. The method also includes providing first coating liquid sprays over the substrate. The first coating liquid sprays surround the central coating liquid spray and are spaced apart from the central coating liquid spray by a same first distance.

Abstract: A plasma processing system and a method for controlling a plasma in semiconductor fabrication are provided. The system includes a remote plasma module configured to generate a plasma. The system further includes a compound mixing member configured to receive the plasma. The system also includes a processing chamber configured to receive the plasma from the compound mixing member for processing. In addition, the system includes a detection module configured to monitor the plasma in the compound mixing member.