Abstract: The instant disclosure includes an alignment system. The alignment system includes a first set of alignment marks, a second set of alignment marks, and a third set of alignment marks. The first, second and third alignment marks correspondingly includes a plurality of segments separated into groups. Each of the group being symmetric to a respective other group. The third set of alignment marks are diagonal to the first set of alignment marks and the second set of alignment marks.

Abstract: A method of correcting a designed pattern of a photomask for fabricating a semiconductor device is provided. A substrate is provided. A first mask pattern of the photomask designed to form a first contact pattern on the substrate is conceived. The first mask pattern includes a plurality of mask holes each having a hole size. The first mask pattern is adjusted to expand the hole size along a horizontal direction and rotate the mask holes for conceiving a second mask pattern of the photomask designed to form a second contact pattern having a plurality of contact holes. A plurality of device gaps between the contact holes is verified, and an overlay margin between the second contact pattern and an adjacent pattern in the semiconductor device is verified for determining whether the second contact pattern is the designed pattern of the photomask.

Abstract: An exposure apparatus for transferring a pattern of a reticle onto a wafer is provided. The exposure apparatus includes an illumination module, a reticle stage, a projection module, a wafer stage, and a control unit. The control unit is configured to calculate an alignment setting of the reticle. The wafer includes a first layer and a second layer disposed on the first layer. The first layer includes a first alignment parameter. The second layer includes a second alignment parameter. The control unit obtains a first weighting factor predetermined according to a property of the first layer, and a second weighting factor predetermined according to a property of the second layer. The alignment setting of the reticle is calculated according to the first alignment parameter, the first weighting factor, the second alignment parameter, and the second weighting factor.

Abstract: An exposure apparatus for transferring a pattern of a reticle onto a wafer is provided. The exposure apparatus includes an illumination module, a reticle stage, a projection module, a wafer stage, and a control unit. The control unit is configured to calculate an alignment setting of the reticle. The wafer includes a first layer and a second layer disposed on the first layer. The first layer includes a first alignment parameter. The second layer includes a second alignment parameter. The control unit obtains a first weighting factor predetermined according to a property of the first layer, and a second weighting factor predetermined according to a property of the second layer. The alignment setting of the reticle is calculated according to the first alignment parameter, the first weighting factor, the second alignment parameter, and the second weighting factor.

Abstract: A method of correcting a designed pattern of a photomask for fabricating a semiconductor device is provided. A substrate is provided. A first mask pattern of the photomask designed to form a first contact pattern on the substrate is conceived. The first mask pattern includes a plurality of mask holes each having a hole size. The first mask pattern is adjusted to expand the hole size along a horizontal direction and rotate the mask holes for conceiving a second mask pattern of the photomask designed to form a second contact pattern having a plurality of contact holes. A plurality of device gaps between the contact holes is verified, and an overlay margin between the second contact pattern and an adjacent pattern in the semiconductor device is verified for determining whether the second contact pattern is the designed pattern of the photomask.

Abstract: The instant disclosure includes an alignment system. The alignment system includes a first set of alignment marks, a second set of alignment marks, and a third set of alignment marks. The first, second and third alignment marks correspondingly includes a plurality of segments separated into groups. Each of the group being symmetric to a respective other group. The third set of alignment marks are diagonal to the first set of alignment marks and the second set of alignment marks.

Abstract: Provided is a combustor including a support shaft, a wing portion provided on the support shaft and configured to swirl a first fluid around the support shaft, and a cover housing enclosing the support shaft and the wing portion and includes a space enlarging portion provided at a downstream of of the wing portion, where a distance of the space enlarging portion from an outer surface of the support shaft is different from distances of other portions of the cover housing from the outer surface of the support shaft.

Abstract: Provided is a combustor including a support shaft, a wing portion provided on the support shaft and configured to swirl a first fluid around the support shaft, and a cover housing enclosing the support shaft and the wing portion and includes a space enlarging portion provided at a downstream of of the wing portion, where a distance of the space enlarging portion from an outer surface of the support shaft is different from distances of other portions of the cover housing from the outer surface of the support shaft.