Patents by Inventor Si Yu
Si Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11965871Abstract: Disclosed are a method and system for intelligent source tracing of organic pollution of a water body, which belongs to the technical field of environmental analytical chemistry. The method comprises: acquiring organic matter analysis and detection data from water samples of a polluted water body through high performance liquid chromatography-tandem mass spectrometry; performing high-throughput screening on the organic matter in the water samples according to said data to determine pollutants; identifying pollution sources by means of network analysis according to the determined pollutants; and according to the identified pollution sources and the organic pollutants, determining key pollutants and quantifying the pollution contributions thereof by using a machine learning classification model.Type: GrantFiled: February 24, 2022Date of Patent: April 23, 2024Assignee: NANJING UNIVERSITYInventors: Jichun Wu, Mengwen Liu, Si Wei, Xiaobin Zhu, Nanyang Yu
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Publication number: 20240100507Abstract: Disclosed is a composition for inhibiting nitrate decomposition and its preparation method, which belongs to a field of photocatalytic technology, comprising: weighing titanium dioxide and pure phase metal carbonate or pure phase metal bicarbonate proportionally; adding the weighed pure phase metal carbonate or the pure phase metal bicarbonate to titanium dioxide for grinding to obtain a metal carbonate/bicarbonate-containing mixture. The method of inhibiting nitrate decomposition using the metal carbonate/bicarbonate of the present disclosure has a significant ability to inhibit nitrate decomposition, and the experimental results show that the method of inhibiting nitrate decomposition using the metal carbonate/bicarbonate can effectively inhibit the decomposition of the nitrate under irradiation for a long time.Type: ApplicationFiled: March 24, 2023Publication date: March 28, 2024Inventors: Yanjuan SUN, Hong WANG, Fan DONG, Yangyang YU, Bangwei DENG, Si CHEN, Qin GENG
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Publication number: 20240103817Abstract: A method, system, and computer program product for script generation and recommendation from behavior trees are provided. The method receives a set of input commands within a programming interface. The set of input commands is parsed into a set of command parts. The set of input commands is normalized based on the set of command parts to generate a set of normalized commands. A set of behavior trees are generated based on the set of normalized commands and the set of parts. The method generates a set of command scripts based on the set of behavior trees.Type: ApplicationFiled: September 23, 2022Publication date: March 28, 2024Inventors: Jing Zhao, Xiao Yun Wang, Si Yu Chen, Jiang Yi Liu, Jiangang Deng
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Publication number: 20240099154Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.Type: ApplicationFiled: November 21, 2023Publication date: March 21, 2024Applicant: UNITED MICROELECTRONICS CORPInventors: Hui-Lin Wang, Si-Han Tsai, Dong-Ming Wu, Chen-Yi Weng, Ching-Hua Hsu, Ju-Chun Fan, Yi-Yu Lin, Che-Wei Chang, Po-Kai Hsu, Jing-Yin Jhang
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Patent number: 11929328Abstract: A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.Type: GrantFiled: January 4, 2021Date of Patent: March 12, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Yang Wu, Shiu-Ko JangJian, Ting-Chun Wang, Yung-Si Yu
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Publication number: 20240079332Abstract: A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.Type: ApplicationFiled: November 8, 2023Publication date: March 7, 2024Inventors: Chia-Yang Wu, Shiu-Ko JangJian, Ting-Chun Wang, Yung-Si Yu
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Patent number: 11917923Abstract: A magnetoresistive random access memory (MRAM) structure, including a substrate and multiple MRAM cells on the substrate, wherein the MRAM cells are arranged in a memory region adjacent to a logic region. An ultra low-k (ULK) layer covers the MRAM cells, wherein the surface portion of ultra low-k layer is doped with fluorine, and dents are formed on the surface of ultra low-k layer at the boundaries between the memory region and the logic region.Type: GrantFiled: April 28, 2021Date of Patent: February 27, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Ching-Hua Hsu, Si-Han Tsai, Shun-Yu Huang, Chen-Yi Weng, Ju-Chun Fan, Che-Wei Chang, Yi-Yu Lin, Po-Kai Hsu, Jing-Yin Jhang, Ya-Jyuan Hung
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Publication number: 20230417791Abstract: A device is provided. The device is configured to measure the air speed near an air outlet of an air curtain. The air curtain is mounted near an open of a wafer box. Receiving grooves are defined in the wafer box. Each receiving groove is configured to receive a wafer. The device includes one or more fixing members and one or more air speed measuring members. Each fixing members is received and held in one receiving groove. Each air speed measuring member is arranged on one fixing member. Each air speed measuring member includes one or more sensors. Each sensor extends outside the wafer box and is positioned below the air curtain. Each sensor is configured to measure the air speed near the air outlet of the air curtain. A related wafer box is also provided.Type: ApplicationFiled: May 19, 2023Publication date: December 28, 2023Inventors: SI-YU WEN, CHUN-KAI HUANG, CHUN-CHUNG CHEN
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Publication number: 20230418787Abstract: A computer-implemented method, computer program product and computer system to automatically perform file management operations is provided. A processor identifies a plurality of files to monitor. A processor generates tracking attributes for the plurality of files. A processor monitors user interactions with the plurality of files. A processor generates prediction vectors for a plurality of file interactions based on the user interactions with the plurality of files. A processor determines at least one file in the plurality of files with tracking attributes that correlate with at least one prediction vector. A processor performs an operation on the at least one file that corresponds with the at least one prediction vector.Type: ApplicationFiled: June 28, 2022Publication date: December 28, 2023Inventors: Jing Zhao, Xiao Yun Wang, Si Yu Chen, JIANGANG DENG, JIANG YI LIU
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Publication number: 20230416762Abstract: The present invention provides a recombinant plasmid for manufacturing bio-based materials, comprising: a promoter system; and a rbs?-synthetic gene cluster, wherein the promoter system comprises a Pribnow box and a transcriptional activator.Type: ApplicationFiled: June 14, 2023Publication date: December 28, 2023Inventors: Si-Yu Li, Ying-Xing Liu, Xiao-Zhen Zhuo, Yu-Ning Wang
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Publication number: 20230375415Abstract: A device is provided. The device is arranged in a wafer box and is configured to simulate to measure physical properties of a surface of a wafer in the wafer box during an air filling and exchanging operation on the wafer box when the wafer box is closed. The device includes one or more simulating members and one or more sensors. Each simulating members is arranged in one receiving groove. The physical properties of a surface of each simulating member received in the one receiving groove matches with the physical properties of the surface of the wafer received in the one receiving groove. At least one of the one or more sensors is arranged on a corresponding simulating member, each sensor is configured to measure the physical properties of a surface of a corresponding simulating member. A related wafer box is also provided.Type: ApplicationFiled: May 19, 2023Publication date: November 23, 2023Inventors: SI-YU WEN, CHUN-KAI HUANG, CHUN-CHUNG CHEN
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Patent number: 11784908Abstract: Methods, apparatus, computer program products for exchange data among air-gapped devices are provided. The method comprises: identifying, by a device in a cluster of devices, a plurality of accessible devices in the cluster via corresponding respective quick response (QR) codes; generating, by the device, logical routing information based on the identified plurality of accessible devices, the logical routing information comprising at least identifiers of the identified plurality of accessible devices; and transmitting, by the device, data encoded in a plurality of QR codes to a destination device in the cluster based on a shortest routing path identified in the logical routing information.Type: GrantFiled: March 9, 2021Date of Patent: October 10, 2023Assignee: International Business Machines CorporationInventors: Min Cheng, Xiao Xuan Fu, Wen Qi Wq Ye, Jiang Yi Liu, Si Yu Chen
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Patent number: 11784240Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a contact layer over a metal silicide layer. The contact layer extends through a first dielectric structure. The semiconductor device structure includes a first metal nitride barrier layer over sidewalls of the contact layer. The first metal nitride barrier layer is directly adjacent to the first dielectric structure. The semiconductor device structure includes a second metal nitride barrier layer partially between the contact layer and the metal silicide layer and partially between the contact layer and the first metal nitride barrier layer. The metal silicide layer is below the first metal nitride barrier layer and the second metal nitride barrier layer.Type: GrantFiled: June 6, 2022Date of Patent: October 10, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chia-Yang Wu, Shiu-Ko Jangjian, Ting-Chun Wang, Yung-Si Yu
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Publication number: 20230297400Abstract: Provided herein are a method, system, and computer program product for creating scripts from command line history. The method includes determining a plurality of distances among a plurality of commands from a command line history. A plurality of command sets is determined from the plurality of commands based on the plurality of distances among the plurality of commands. Each of the plurality of command sets includes at least two neighboring commands. A script is created by the one or more processors based on a first command set and a second command set of the plurality of command sets in response to a distance between the first command set and the second command set being less than a predetermined threshold.Type: ApplicationFiled: March 21, 2022Publication date: September 21, 2023Inventors: JIANG YI LIU, Min Cheng, Xiao Xuan Fu, Si Yu Chen, Wen Qi WQ Ye
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Publication number: 20230268425Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a dielectric structure over the substrate. The semiconductor device structure includes a contact structure passing through the dielectric structure. The contact structure includes a contact layer, a first barrier layer, and a second barrier layer, the contact layer passes through the first barrier layer, the first barrier layer passes through the second barrier layer, the first barrier layer surrounds the contact layer, the second barrier layer surrounds a first upper portion of a sidewall of the first barrier layer and exposes a first lower portion of the sidewall of the first barrier layer, and the sidewall faces away from the contact layer.Type: ApplicationFiled: April 26, 2023Publication date: August 24, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Yang WU, Shiu-Ko JANGJIAN, Ting-Chun WANG, Yung-Si YU
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Patent number: 11670704Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a dielectric structure over the substrate. The semiconductor device structure includes a contact structure passing through the dielectric structure. The contact structure includes a contact layer, a first barrier layer, and a second barrier layer. The first barrier layer surrounds the contact layer, the second barrier layer surrounds a first upper portion of the first barrier layer, the contact layer passes through the first barrier layer and extends into the dielectric structure, and the first barrier layer passes through the second barrier layer and extends into the dielectric structure.Type: GrantFiled: June 7, 2021Date of Patent: June 6, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Yang Wu, Shiu-Ko Jangjian, Ting-Chun Wang, Yung-Si Yu
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Publication number: 20230170509Abstract: The present invention provides a methanol solid oxide fuel cell and a power generation system comprising the same, wherein the fuel cell is a tubular SOFC cell stack, the tubular SOFC cell stack comprises a plurality of tubular SOFC single cells, and a side wall of an inner pipe of the tubular SOFC single cell at a fuel inlet is of a porous layer structure; an inner wall of the inner pipe is coated with a methanol pyrolysis catalyst layer, and the thickness of the catalyst layer gradually increases along a moving direction of the fuel in the inner pipe. The methanol solid oxide fuel cell can effectively relieve carbon deposition of the anode of the methanol SOFC, and can ensure that the temperature of the whole cell is more uniform and the cell performance is more stable.Type: ApplicationFiled: January 10, 2022Publication date: June 1, 2023Applicant: JIANGSU UNIVERSITY OF SCIENCE AND TECHNOLOGYInventors: Wei Kong, Si Yu Lu, Man Zhang, Leitao Han, ALEXEI LEVTSEV, ANDREY MAKEEV, ANATOLY LYSYAKOV
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Patent number: 11664515Abstract: The present invention provides a methanol solid oxide fuel cell and a power generation system comprising the same, wherein the fuel cell is a tubular SOFC cell stack, the tubular SOFC cell stack comprises a plurality of tubular SOFC single cells, and a side wall of an inner pipe of the tubular SOFC single cell at a fuel inlet is of a porous layer structure; an inner wall of the inner pipe is coated with a methanol pyrolysis catalyst layer, and the thickness of the catalyst layer gradually increases along a moving direction of the fuel in the inner pipe. The methanol solid oxide fuel cell can effectively relieve carbon deposition of the anode of the methanol SOFC, and can ensure that the temperature of the whole cell is more uniform and the cell performance is more stable.Type: GrantFiled: January 10, 2022Date of Patent: May 30, 2023Assignee: JIANGSU UNIVERSITY OF SCIENCE AND TECHNOLOGYInventors: Wei Kong, Si Yu Lu, Man Zhang, Leitao Han, Alexei Levtsev, Andrey Makeev, Anatoly Lysyakov
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Publication number: 20230084779Abstract: A battery system includes several unit battery groups, a main switch, a current measuring unit, several slave control units and a master control unit. Each unit battery group includes several cells. The main switch and the current measuring unit are serially connected to the unit battery groups. The current measuring unit measures a measured system current value of the unit battery groups. The slave control units are electrically connected to the unit battery groups respectively. Each slave control unit measures a physical parameter value of each cell in each unit battery group. The master control unit communicates with the slave control units to: disconnect the main switch when the abnormality determined according to the physical parameter value or the measured system current value pertains to system abnormality; and, perform a processing procedure for detection abnormality when the abnormality pertains to detection abnormality.Type: ApplicationFiled: December 21, 2021Publication date: March 16, 2023Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Chein-Chung SUN, Chi-Hua CHEN, Chun-Hung CHOU, Si-Yu FU
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Publication number: 20220302283Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a contact layer over a metal silicide layer. The contact layer extends through a first dielectric structure. The semiconductor device structure includes a first metal nitride barrier layer over sidewalls of the contact layer. The first metal nitride barrier layer is directly adjacent to the first dielectric structure. The semiconductor device structure includes a second metal nitride barrier layer partially between the contact layer and the metal silicide layer and partially between the contact layer and the first metal nitride barrier layer. The metal silicide layer is below the first metal nitride barrier layer and the second metal nitride barrier layer.Type: ApplicationFiled: June 6, 2022Publication date: September 22, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Yang WU, Shiu-Ko JANGJIAN, Ting-Chun WANG, Yung-Si YU