Patents by Inventor Sian F. Lee

Sian F. Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming oxide dielectric layer on refractory metal silicide gate
    Patent number: 5872057
    Abstract: The present invention provides a method of forming an oxide dielectric layer on a tungsten silicide gate structure in a furnace oxidation process by first depositing a thin layer of amorphous silicon on top of the refractory metal silicide gate structure such that the refractory metal silicide is not damaged by the oxidant during the furnace oxidation process. For a tungsten silicide gate structure, a thin layer of amorphous silicon between about 10 .ANG. and about 100 .ANG. thick can be suitably used for such purpose.
    Type: Grant
    Filed: November 22, 1996
    Date of Patent: February 16, 1999
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventor: Sian F. Lee