Patents by Inventor Siao-Ren Hsu

Siao-Ren Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11469179
    Abstract: A wire interconnect structure of an integrated circuit includes a first wiring layer, a second wiring layer, a third wiring layer, first conductive via structures, second conductive via structures, and third conductive via structures. The first wiring layer includes a first wire connected to first transistors and a second wire connected to second transistors. The second wiring layer includes third wires and fourth wires that are perpendicular to the first wire and the second wire. The third wiring layer includes a fifth wire and a sixth wire that are parallel to the first wire and the second wire and respectively connected to a first contact pad and a second contact pad above. The first transistors are electrically connected to the first contact pad through the first wire, and the second transistors are electrically connected to the second contact pad through the second wire.
    Type: Grant
    Filed: October 21, 2020
    Date of Patent: October 11, 2022
    Assignee: ALi Corporation
    Inventor: Siao-Ren Hsu
  • Publication number: 20210167008
    Abstract: A wire interconnect structure of an integrated circuit includes a first wiring layer, a second wiring layer, a third wiring layer, a first conductive via structure, a second conductive via structure, and a third conductive via structure. The first wiring layer includes a first wire connected to a first transistor and a second wire connected to a second transistor. The second wiring layer includes a third wire and a fourth wire that are perpendicular to the first wire and the second wire. The third wiring layer includes a fifth wire and a sixth wire that are parallel to the first wire and the second wire and respectively connected to a first contact pad and a second contact pad above. The first transistor is electrically connected to the first contact pad through the first wire, and the second transistor is electrically connected to the second contact pad through the second wire.
    Type: Application
    Filed: October 21, 2020
    Publication date: June 3, 2021
    Applicant: ALi Corporation
    Inventor: Siao-Ren Hsu